Effects of compressive and tensile stress on the growth mode of epitaxial oxide films

Oxide films were deposited on different substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction was performed to in situ investigate the change of growth mode and the lattice relaxation during the growth. An asymmetrical phenomenon was found in the two kinds of strain states, compressive stress and tensile stress of heterostructures with different lattice mismatch. In the case of BaTiO₃/SrTiO₃ (2.2%), 2D layer-by-layer growth mode without lattice relaxation can be maintained for a longer period for BTO films on STO with compressive stress, comparing to STO films on BTO with tensile stress. When MgO films were deposited on SrTiO₃ with a large mismatch of 7.8%, compressive stress leads to rapid lattice relaxation with a very thin wet layer, and 3D strained island were observed. As a comparison, SrTiO₃ films on MgO with tensile stress were configured. No RHEED patterns can be observed duo to a large tensile stress.     

化学束外延

本文介绍了化学束外延(CBE)的发明和发展,论述了CBE的原理和设备。文中还介绍了最近提出的一种生长机理。     

Epitaxial growth of GaN on (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> via solution-cast seed layer formation process using Ga(mDTC)<Subscript>3</Subscript>

This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al₂O₃ substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)₃ was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)₃ concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.     

High growth rate process in a SiC horizontal CVD reactor using HCl

The results of a new epitaxial process using an industrial 6 × 2″ wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H₂ > 0.05%) and an increase of the growth rate until about 20 μm/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current-voltage (I-V) characteristics.     

Twinning of YBa2Cu3O7 thin films on different substrates

The twinning of YBa₂Cu₃O₇ (YBCO) thin films with c-axis orientation on (001) MgO, (001) SrTiO₃, (012) LaAlO₃, (110) NdGaO₃ and (001) NdGaO₃ substrates, prepared by laser ablation, has been examined using a combination of and θ/2θ scans at a four-circle diffractometer. On all substrates, except for (001) NdGaO₃, the tetragonal to orthorhombal phase transition results in four different orientations of YBCO twins relating to the substrate. On (001) NdGaO₃ only two different twin orientations, accompanied by a slight lattice monoclinization, has been observed.     

InGaAsP／InP PFBH激光器

采用Ｎ－ＩｎＰ衬底研制ＩｎＧａＡｓＰ／ＩｎＰ激光器和ＤＦＢ激光器在国内已报导过多次，本文介绍用Ｐ－ＩｎＰ衬底研制ＩｎＧａＡｓＰ／ＩｎＰ平面埋层异质结构激光器和ＤＦＢ－ＰＦＢＨ激光器，同时利用晶体生长和晶向的依赖关系，改进埋区的结构，使器件最高激射温度大于１００℃。     

电流控制LPE生长In_（1－x）Ga_xAs_yP_（1－Y）

用电流控制液相外延（ＣＣＬＰＥ）方法首次在（１００）ＩｎＰ衬底上成功地生长出Ｉｎ１－ｘＧａｘＡｓｙＰ１－ｙ（０．３０＜ｘ＜０．４７，０．７０＜ｙ＜０．９６）外延层，并对外延层特性进行了详细研究，提出在ＩｎＰ衬底上生长电外延层的机理，推导出生长动力学的理论模型，该模型与上述实验结果十分吻合。     

Epitaxy growth and directed crystallization of high-density polyethylene in the oriented blends with isotactic polypropylene

Various lamellar orientations of high-density polyethylene (HDPE), due to competition between bulk nucleation and interfacial nucleation, have been realized in its melt drawn blends with isotactic polypropylene (iPP) upon cooling after subjected to 160 °C for 30 min. Directed crystallization, with heterogeneous nucleation in the bulk (within domains), is defined as lamellar growth along boundary of anisotropic domains and is favored in larger domains at higher temperature (slow cooling), since overgrowth of lamellae can feel the interface rather than impingement with neighbor ones as a result of scare nuclei at higher temperature. Moreover, lamellar growth caused by directed crystallization is dependent of dimension of confinement. Due to 2D confinement of cylindrical domains, lamellae can only grow along the axis of cylinder and thus b-axis orientation is formed. While in the layered domains with 1D confinement, however, lamellae grow with the normal of (110) plane along the melt drawn direction. On the other hand, epitaxial growth of HDPE chains onto iPP lamellae is related to the surface-induced crystallization and dominated by the interfacial nucleation. Only interfacial nucleation is preferred can epitaxial growth occur. Therefore, retarded crystallization, realized by either strong confinement in finer domains or rapid cooling or both, is favorable for it.     

Microstructure of sputtered epitaxial Ni0.80Fe0.20/NixCO1−xO exchange coupled bilayers on α-Al2O3 (0001)

Epitaxial Ni_0.80Fe_0.20/Ni_xCo_1−xO bilayers have been grown on α-Al₂O₃ (0001) substrates by dc-sputtering X-ray diffraction and transmission electron microscopy have been employed to characterize these exchange-coupled films. The x-ray diffraction spectrum shows only the (111) family of peaks in both Ni_0.80Fe_0.20 and Ni_xCO_1−xO films. Growth orientation relationships have been determined from diffraction patterns taken in planar view and cross section. The relationships are: (111) Ni_0.80Fe_0.20//(111) Ni_xCo_1−xO//(0001) α−Al₂O₃ and [1 0]Ni_0.80FE_0.20//[1 0]Ni_xCo_1-xO//[1 00] α-Al₂O₃. The microstructure of these films as well as the interfacial structure between Ni_0.80Fe_0.20 and Ni_xCo_1−xO have been analyzed in high resolution electron microscopy and are described in this paper. In addition, the dependence of the exchange coupling field on interfacial roughness is discussed.     

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

100-nm-thick Cu layers were grown on MgO(001) substrates by ultra-high vacuum magnetron sputter deposition at substrate temperatures T_s ranging from 40 to 300 °C. X-ray diffraction ω−2θ scans, ω-rocking curves, and pole figures show that layers grown at T_s = 40 and 100 °C are complete single crystals with a cube-on-cube epitaxial relationship with the substrate: (001)_Cu||(001)_MgO with [100]_Cu||[100]_MgO. In contrast, T_s ≥ 200 °C leads to polycrystalline Cu layers with 001, 203, and 1¯75-oriented grains. The transition from a single- to a polycrystalline microstructure with increasing T_s is attributed to temperature-induced mass transport that allows Cu nuclei to sample a larger orientational space and find lower energy (and/or lower lattice mismatch) configurations. The large Cu- to-MgO lattice mismatch of 14% is relieved by 7 × 7 Cu unit cells occupying 6 × 6 MgO cells. In addition, for T_s ≥ 200 °C, the 001-oriented grains relax by tilting by 4° or 15° about 〈110〉 or 〈100〉 axes, respectively, while the 203 and 1¯75-oriented grains exhibit complex epitaxial relationships with the substrate: (203)_Cu||(001)_MgO with [010]_Cu||[110]_MgO and [302¯]_Cu||[11¯0]_MgO; and (1¯75)_Cu||(001)_MgO with [211¯]_Cu||[100]_MgO and [43¯5]_Cu||[010]_MgO. The surface roughness, as determined by X-ray reflectivity, increases with growth temperature. The smoothest layers are grown at 40 °C and exhibit an rms surface and buried interface roughness of 0.7 and 1.4 nm, respectively.