THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

GOS+MU:一种查询对象选择新方法

在分析单一MU(Most Uncertainty)采样缺陷的基础上,提出一种"全局最优搜寻"方法 GOS(Global Optimal Search),并结合MU共同完成查询选择。GOS+MU方法中,GOS着眼全局寻找目标,在应用环境能提供的训练样本数量有限、分类器受训不充分时,该方法选择的对象学习价值高,能快速推进分类器学习进程;MU则能够在GOS采样失效情形下,利用分类器当前训练成果,选择查询不确定性最强的样本补充训练集。通过对网络商品的用户评论进行分类仿真,并比较其他采样学习方法的效果,证明了GOS+MU方法在压缩学习成本、提高训练效率方面的有效性。     

基于新型光纤的传输技术探讨

随着互联网的高速发展，引发了网络流量、电信骨干网流量急速增长，使得网络容量的提升迫在眉睫。目前，100G 系统已经商用，超100G系统能够更有效地解决流量和网络带宽持续增长带来的压力，本文主要介绍新型单模光纤的特性以及探讨基于新型单模光纤的传输技术。     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

用于远程激光测距机的板条激光器

研制了用于远程激光脉冲测距机的板条激光器。使用半导体泵浦的MOPA激光结构实现了大于250 mJ的脉冲激光输出,输出脉冲宽度为12.83 ns,最终输出激光光束束散角为0.18 mrad。该激光测照器可应用于远程激光测距。对激光测距机的测距与照射能力进行了理论计算与分析。理论分析表明,应用于机载平台时,该激光测照器能够实现50 km距离的激光测距。该型激光测距机具有测距距离远,重量轻,结构紧凑等特点,具有广泛的应用前景。     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

Effect of microstructure on the fatigue crack growth behaviour of a near-α Ti alloy

Fatigue crack growth behaviour of Ti–6Al–2Zr–1.5Mo–1.5V (VT-20 a near-α Ti alloy) was studied in lamellar, bimodal and acicular microstructural conditions. Fatigue crack growth tests at both increasing and decreasing stress intensity factor range values were performed at ambient temperature and a loading ratio of 0.3 using compact tension samples. Lamellar and acicular microstructures showed lower fatigue crack growth rates as compared to the bimodal microstructure due to the tortuous nature of cracks in the former and the cleavage of primary α in the latter. The threshold stress intensity factor range was highest for acicular microstructure.     

低剂量抑制剂Inhibex501存在下的甲烷水合物相平衡研究

含动力学抑制剂的天然气水合物相平衡研究对新型低剂量抑制剂的开发具有指导作用。在283.6 ~ 290.9 K和7.51 MPa ~ 15.97 MPa的温压范围内研究了抑制剂Inhibex501及其溶剂2-乙二醇单丁醚对甲烷水合物相平衡条件的影响。实验结果显示，0.5wt%和2.0wt%浓度的Inhibex501对甲烷水合物形成的热力学条件具有促进作用，能使甲烷水合物形成移向更高的温度或者更低的压力，而2-乙二醇单丁醚在浓度0.2wt% ~ 1.0wt%范围几乎不改变甲烷水合物形成的热力学条件，N-乙烯基己内酰胺与N-乙烯基吡咯烷酮的共聚物对水合物形成热力学条件的改变起主要作用。