Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

The new intra-urban dynamics: Suburbanisation and functional specialisation in French cities

This article examines the relationships between the employment suburbanisation from central cities towards their suburbs, and the process of intra-urban specialisation that occurred simultaneously in the fifty largest French metropolitan areas. A methodology is proposed to identify urban subcentres and to analyse the effects of the intra-urban specialisations on suburbanisation patterns. We conclude that the specialisation of both subcentres and central cities has a significant effect on suburbanisation rates. Lastly, an intra-metropolitan shift/share analysis provides additional insights into the employment dynamics of central cities and suburbs during the last twenty years. Received: 25 July 2000 / Accepted: 29 May 2001     

激光晶体Nd:YVO4的形貌及生长缺陷

本文报道了应用环境扫描电镜（ESEM）和同步辐射X射线白光形貌术对采用提拉法生长出的Nd:YVO4晶体进行的形貌及生长缺陷的分析,获得了该晶体的开裂表面的ESEM形貌像以及取自晶体肩部和中间部位的（001）面的同步辐射白光形貌像,观察到了位错、包裹物等缺陷,可为生长高质量的Nd:YVO4晶体提供重要的启示.     

微波处理对离体黄瓜子叶生根和根活力的影响

用辐射功率200W微波（2450MHz）处理6～16，明显促进离体黄瓜子叶生根．根长和根鲜重增加。不同辐射强度和辐服时间对离体黄瓜子叶生根有不同影响。用TTC法测定，微波处理后与根活力相关的OD值比对照体增加了。用温箱模拟FISO微波炉功率为200W的温度，不同处理时间处理离体黄瓜子叶，没有发现促进生根。说明在一定条件下，微波辐射处理离体黄瓜子叶促进生根．主要是微波的辐射效应。     

Scheduling railway traffic at a construction site

We consider the problem of rescheduling trains in the case where one track of a railway section consisting of two tracks in opposing directions is closed due to construction activities. After presenting an appropriate model for this situation we derive a polynomial algorithm for the subproblem of finding an optimal schedule with minimal latenesss if the subsequences of trains for both directions outside the construction site are fixed. Based on this algorithm we propose a local search procedure for the general problem of finding good schedules and report test results for some real world instances. Received: December 8, 1999 / Accepted: May 2, 2001     

FindOut: Finding Outliers in Very Large Datasets

Finding the rare instances or the outliers is important in many KDD (knowledge discovery and data-mining) applications, such as detecting credit card fraud or finding irregularities in gene expressions. Signal-processing techniques have been introduced to transform images for enhancement, filtering, restoration, analysis, and reconstruction. In this paper, we present a new method in which we apply signal-processing techniques to solve important problems in data mining. In particular, we introduce a novel deviation (or outlier) detection approach, termed FindOut, based on wavelet transform. The main idea in FindOut is to remove the clusters from the original data and then identify the outliers. Although previous research showed that such techniques may not be effective because of the nature of the clustering, FindOut can successfully identify outliers from large datasets. Experimental results on very large datasets are presented which show the efficiency and effectiveness of the proposed approach. Received 7 September 2000 / Revised 2 February 2001 / Accepted in revised form 31 May 2001 Correspondence and offprint requests to: A. Zhang, Department of Computer Science and Engineering, State University of New York at Buffalo, Buffalo, NY 14260, USA. Email: azhang@cse.buffalo.eduau     

Shallow Linear Action Graphs and their Embeddings

Action calculi, which generalise process calculi such as Petri nets, π-calculusand ambient calculus, have been presented in terms of action graphs. We here offer linear action graphs as a primitive basis for action calculi. This paper presents the category of embeddings of undirected linear action graphs without nesting, using a novel form of graphical reasoning which simplifies some otherwise complex manipulations in regular algebra. The results are adapted in a few lines to directed graphs. This work is part of a long-term search for a uniform behavioural theory for process calculi. Received October 2000 / Accepted in revised form April 2001     

Influence of the intrinsic layer characteristics on a-Si:H p–i–n solar cell performance analysed by means of a computer simulation

In this paper a set of one-dimensional simulations of a-Si:H p–i–n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift–diffusion and the generation–recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy.     

微晶合金在电流互感器中的应用

从微晶合金的性能特点出发，分析了其在电流互感器中的应用前景。     

Colour Centres and Energy Transfer in BaF2-xClx:Eu2+ Phosphors

The optical absorption spectra of BaF2-xClx:Eu2 after ultraviolet (UV) light excitation were investigated.The differences between the absorption spectra after and before excitation (DAS) were observed.The DAS increase at both the high and the low energy side of F band in BaF2-xClx:Eu2 after 245 nm UV light excitation.The bleach effect of UV light and the absorption of electrons in the valence band may account for the former and the formation of Fa centres (association of F(Cl-) centres), whose absorption band matches the HeNe laser better, may explain the latter.In the write-in process, the transfer of electrons is via tunneling.In the readout process, the transfer of electrons captured in F(F-) and Fa centres is more likely via tunneling, and that of F(Cl-) centres is more likely via conduction band.