Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques

We report on the use of pulsed plasma-enhanced chemical vapor deposition (P-PECVD) technique and show that “state-of-the-art” amorphous silicon (a-Si:H) materials and solar cells can be produced at a deposition rate of up to 15 Å/s using a modulation frequency in the range 1–100 kHz. The approach has also been developed to deposit materials and devices onto large area, 30 cm×40 cm, substrates with thickness uniformity (<5%), and gas utilization rate (>25%). We have developed a new “hot wire” chemical vapor deposition (HWCVD) method and report that our new filament material, graphite, has so far shown no appreciable degradation even after deposition of 500 μm of amorphous silicon. We report that this technique can produce “state-of-the-art” a-Si:H and that a solar cell of p/i/n configuration exhibited an initial efficiency approaching 9%. The use of microcrystalline silicon (μc-Si) materials to produce low-cost stable solar cells is gaining considerable attention. We show that both of these techniques can produce thin film μc-Si, dependent on process conditions, with 1 1 1 and/or 2 2 0 orientations and with a grain size of approx. 500 A. Inclusion of these types of materials into a solar cell configuration will be discussed.     

Feasibility study of absolute activity measurement with metallic magnetic microcalorimeters

We report on a feasibility study on precise determination of mass-specific activity of low-energy emitting radioisotopes. Conventional methods of activity measurement suffer from source self-absorption and a strong decrease in detection efficiency for low-energy electrons and photons. We propose a new method based on metallic magnetic microcalorimeters with the source embedded in the detector target in a 4π geometry. First results with a ⁵⁵Fe source show that electrons and photons are detected with a detection efficiency close to unity and with little loss of energy for electrons. The aim of this study is to provide standards of activity with very low uncertainties in the framework of radiation metrology.     

Using ion implantation to adjust the transition temperature of superconducting films

We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer T_c control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented.     

Doped silicon and NIS junctions for bolometer applications

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers.     

Identification of photoluminescence features of an epoxy resin based on components features and curing effects

Photoluminescence features in a commercial grade cured DGEBA-based epoxy resin have been investigated with as objective to determine which of the material compounds are responsible for cured resin emissions. The origin of the bands has been approached by considering photoluminescence of base resin and hardener taken separately, of their mixture, and in the course of curing. Most of the bands observed in the cured resin could be interpreted based on those found in the components taken separately. Fluorescence of the cured resin appears dominated by two broad bands that are characteristic of the hardener and exhibits a blue shift by up to 30 nm in the course of curing which could be used for cure monitoring purpose of the investigated system. Fluorescence of the base resin is clearly detected in the resin cured with tertiary amine as catalyser. However, it is very weak if the catalyser is not added. Two phosphorescence processes have been isolated in the cured resin, one of them being related to the base resin. Finally, a chemiluminescence spectrum has been recorded in the course of curing, which has been related to either curing-related reactions or to an oxidation process.     

Potential of vibro-milling technique for preparation of electroceramic nanopowders

The potential of the vibro-milling technique as a simple method to obtain usable quantities of single-phase electroceramic powders with nanosized particles was examined. A detailed study considering the role of both milling time and firing condition on phase formation and particle size of the final product was performed. The calcination temperature for the formation of the desired phase was lower when longer milling times have been applied. More importantly, by employing an appropriate choice of the milling time and calcination condition, high purity electroceramic nanopowders have been successfully prepared with a simple solid-state reaction method.     

MOBSY: Integration of vision and dialogue in service robots

Abstract. This contribution introduces MOBSY, a fully integrated, autonomous mobile service robot system. It acts as an automatic dialogue-based receptionist for visitors to our institute. MOBSY incorporates many techniques from different research areas into one working stand-alone system. The techniques involved range from computer vision over speech understanding to classical robotics. Along with the two main aspects of vision and speech, we also focus on the integration aspect, both on the methodological and on the technical level. We describe the task and the techniques involved. Finally, we discuss the experiences that we gained with MOBSY during a live performance at our institute.     

Hydrothermal Reaction Mechanism and Pathway for the Formation of K2Ti6O13 Nanowires

Calculations and detailed first principle and thermodynamic analyses have been performed to understand the formation mechanism of K₂Ti₆O₁₃ nanowires (NWs) by a hydrothermal reaction between bulk Na₂Ti₃O₇ crystals and a KOH solution. It is found that direct ion exchange between K⁺ and Na⁺ plus H⁺ interactions with [TiO₆] octahedra in Na₂Ti₃O₇ promote the formation of an intermediate H₂K₂Ti₆O₁₄ phase. The large lattice mismatch between this intermediate phase and the bulk Na₂Ti₃O₇ structure, and the large energy reduction associated with the formation of this intermediate phase, drive the splitting of the bulk crystal into H₂K₂Ti₆O₁₄ NWs. However, these NWs are not stable because of large [TiO₆] octahedra distortion and are subject to a dehydration process, which results in uniform K₂Ti₆O₁₃ NWs with narrowly distributed diameters of around 10 nm.     

Finite sample properties of estimators of spatial autoregressive models with autoregressive disturbances

The article investigates the finite sample properties of estimators for spatial autoregressive models where the disturbance terms may follow a spatial autoregressive process. In particular we investigate the finite sample behavior of the feasible generalized spatial two-stage least squares (FGS2SLS) estimator introduced by Kelejian and Prucha (1998), the maximum likelihood (ML) estimator, as well as that of several other estimators. We find that the FGS2SLS estimator is virtually as efficient as the ML estimator. This is important because the ML estimator is computationally burdensome, and may even be forbidding in large samples, while the FGS2SLS estimator remains computationally feasible in large samples. Received: 20 January 2001 / Accepted: 31 August 2001     

Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)

Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed.