Photoinduced hydroxyl radical and photocatalytic activity of samarium-doped TiO(2) nanocrystalline

Sm(3+)-doped TiO(2) nanocrystalline has been prepared by sol-gel auto-combustion technique and characterized by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) method, and also UV-vis diffuse reflectance spectroscopy (DRS). These Sm(3+)-doped TiO(2) samples were tested for methylene blue (MB) decomposition and *OH radical formation. The analysis of *OH radical formation on the sample surface under UV irradiation was performed by fluorescence technique with using terephthalic acid, which readily reacted with *OH radical to produce highly fluorescent product, 2-hydroxyterephthalic acid. It was observed that the presence of Sm(3+) ion as a dopant significantly enhanced the photocatalytic activity for MB degradation under UV light irradiation because both the larger specific surface area and the greater the formation rate of *OH radical were simultaneously obtained for Sm(3+)-doped TiO(2) nanocrystalline. The adsorption experimental demonstrated that Sm(3+)-TiO(2) had a higher MB adsorption capacity than undoped TiO(2) and the adsorption capacity of MB increased with the increase of samarium ion content. The results also indicated that the greater the formation rate of *OH radical was, the higher photocatalytic activity was achieved. In this study, the optimum amount of Sm(3+) doping was 0.5 mol%, at which the recombination of photo-induced electrons and holes could be effectively inhibited, the highest formation rate of *OH radicals was, and thereby the highest photocatalytic activity was achieved.     

Photo-control of the electronic states of Iron coordinated to photo-responsive polyaniline

Fe³⁺ doped polyaniline (PANI) films containing azobenzene derivatives in the side chain have been prepared. Photoisomerization of the azobenzene derivative in the PANI films was observed at room temperature. Furthermore, ⁵⁷Fe Mössbauer measurements showed that the ligand-metal bond distance and the symmetry around the Fe³⁺ were influenced by the photoisomerization.     

全光通信网中的L波段光纤激光器研究

本文首先介绍了光纤激光器(特别是掺铒光纤激光器)的工作原理。进而对L波段光纤激光器进行了深入的探讨,并分析了影响激光器输出的因素:谐振腔长、掺铒光纤长度,且做了相应的理论分析。     

Mechanism and behaviors of Cr3+-doped TiO2

TiO₂ powder and TiO₂ thin film on the surface of glazed ceramic tile were prepared by sol-gel method. The influences of different doping Cr³⁺ concentration on the photocatalytic activity of TiO₂ were discussed, UV-visible and X-ray diffraction analysis were used to test the performance of TiO₂ powder and film. The results indicate that photocatalytic activity of doping Cr³⁺-TiO₂ thin film is higher than that of powder, and the interaction between Cr³⁺-doped and substrate can greatly enhance the photocatalytic activity. The results of X-ray diffraction and photoabsorption show that the Cr³⁺-doped energy level in TiO₂ is 0.62 eV high from the top of valence band, which belongs to the type of deep energy level doping. On the basis of the semiconductor energy level theory and Cr³⁺ dopant energy level, the semiconductor energy level model of Cr³⁺ in TiO₂ powder and thin film were established, and the doping mechanisms of Cr³⁺-doped in TiO₂ powder and thin film were analyzed. Foundation item: Project (20466001) supported by the National Natural Science Foundation of China     

Synthesis, structure and photocatalytic properties of Fe(III)-doped TiO2 prepared from TiCl3

Iron(III)-doped titanium dioxide photocatalysts were prepared from aqueous titanium(III) chloride solution in the presence of dissolved FeCl₃ (0–10.0 at.% relative to TiCl₃) by co-precipitation method. The precipitate was completely oxidized in the aerated suspension, hydrothermally treated, washed and calcinated. The structure of the powders was characterized by thermoanalysis (TG-DTA), diffuse reflectance spectroscopy (DRS), X-ray diffraction (XRD), nitrogen adsorption and transmission electron microscopy (TEM). The light absorption of the iron-containing powders is red shifted relative to the bare sample. The particle size and anatase content were found to significantly decrease at iron contents ≥6.0 at.% which is accompanied with the increase of their specific surface area. XANES measurements showed that the local structure of iron systematically changes with the variation of the dopant concentrations: at higher Fe-contents, hematite- or goethite-like environments were observed, consistent with the formation of separate X-ray amorphous Fe(III)-containing phases. The local structure of iron gradually transformed with decreasing dopant concentrations, possibly due to substitution of Fe(III) in the titania (TiO₂) crystal lattice. Energy dispersive X-ray analysis (EDX) and chemical analysis was used to characterize the iron content of the samples in the bulk and X-ray photoelectron spectroscopy (XPS) in the surface layer of the particles. The photocatalytic performance of the prepared photocatalysts was compared with the activity of Aldrich anatase under UV–vis and VIS irradiation in two different photoreactors. Maximum photocatalytic performance was found at 3.0 at.% iron concentration for UV–vis and at 1.2 at.% for VIS irradiation. Doping with iron(III) ions increased the photodegradation rate of phenol by a factor of three for UV–vis irradiation and by a factor of two for VIS irradiation, relative to the bare photocatalyst.     

废旧锂离子电池水热法制备钕掺杂钴铁氧体

以废旧锂离子电池为原料,采用水热法制备了Nd3+掺杂的钴铁氧体。并用XRD和振动样品磁强计(VSM)研究了Nd3+的掺杂量对钴铁氧体的相结构和磁性能影响。结果表明:所有产品均呈尖晶石结构,当掺杂的Nd3+摩尔分数为1.0%时,产品具有较好的磁性能。产品的Ms为3.954×105A/m,Mr为1.954×105A/m,Hc为82.47kA/m。     

L-波段光纤放大器及其研究进展

介绍了实现Ｌ－波段放大的三种光纤放大器:增益移位掺饵光纤放大器、掺饵碲化物光纤放大器和光纤拉曼放大器,就每一种光纤放大器的原理、结构、特点和发展现状进行了综述．     

Hydrothermal growth of Sn-doped FeS2 cubes on FTO substrates and its photoelectrochemical properties

Sn⁴⁺-doped FeS₂ cubes with high yield thin films have been successfully synthesized on FTO glass through a simple hydrothermal process. The Sn⁴⁺-doped FeS₂ cubes are single crystalline in cubic structure with (2 0 0) facet as the main exposed surface. The formation process was investigated. Sn²⁺ was found to play an important role during the formation process of FeS₂ growing on FTO glass. The direct optical band gap value can be estimated to be 1.71 eV which is much larger than that of bulk FeS₂ due to the Sn⁴⁺ doping. The photoelectrochemical properties of the Sn⁴⁺-doped FeS₂ films were studied as well. There is a significant increase in photocurrent of Sn⁴⁺-doped FeS₂ electrode compared to that of undoped sample.     

高功率掺Yb3 双包层光子晶体光纤超荧光光源

实验报道了一种新型的高功率宽带掺Yb^3＋双包层光子晶体光纤（DC-PCF）超荧光光源（SFS）。利用端面耦合技术直接将高功率激光二极管激光器（LD，中心波长为976nm）输出的泵浦光耦合进掺Yb^3＋ DC-PCF。采用双程前向泵浦方式获得了平坦的宽带超荧光输出，最大超荧光输出功率1．649W，斜率效率为56．7％，3dB带宽为22．4nm。     

calculations of p-type δ-doped quantum wells in Si

We present the hole subband structure calculation in single and double p-type δ-doped quantum wells in Si based on the 4×4 Luttinger–Kohn Hamiltonian. The valence band bending and the Γ hole states are calculated within the lines of the Thomas–Fermi–Dirac approximation and the effective mass theory at the Brillouin zone center. The obtained zone center eigenstates are then used to diagonalize the k·p Hamiltonian for non-zero k. The hole subband structure is analyzed as a function of the impurity density and the distance between δ wells. It is shown that the application of a 4×4 model to describe the hole ground state in single p-type δ-doped in Si can be misleading.