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分别以Si2 H6和GeH4及SiH4和GeH4两种组合气体为源气体,用甚高频等离子增强化学气相沉积(VHF-PECVD)制备μc-SiGe薄膜.用Raman散射光谱和原子力显微镜(AFM)对薄膜的结构进行研究.结果表明:与SiH4和GeH4制备的薄膜系列相比,Si2H6和GeH4制备的薄膜中Ge的融入速率相对较慢;用... 相似文献
124.
退火工艺对钛酸锶钡薄膜结构的影响 总被引:4,自引:0,他引:4
采用射频磁控溅射在Pt/Ti/SiO2/Si(100)衬底上制备Ba0.6Sr0.4TiO3(BST)铁电薄膜,在500~750℃之间对薄膜快速退火。XRD分析表明:500℃时BST薄膜开始晶化为ABO3型钙钛矿结构,温度越高结晶越完整,晶粒越大。理论计算表明,薄膜在低温退火后无择优取向,高温退火后在(111)、(210)晶面有择优取向。退火气氛、保温时间、循环次数等因素对薄膜晶粒大小无明显影响,但对表面粗糙度和结晶程度影响较大。 相似文献
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Inductively coupled plasma (ICP) processing has become the industrial processing standard for HgCdTe and its related II–VI
compounds. In this study ICP processes were developed that allow several microns of HgCdTe to be plasma etched while maintaining
a low root-mean-square (RMS) roughness, and even improving the surface roughness in the case of HgCdTe-on-Si. These ICP processes
are superior to older electron cyclotron resonance (ECR) plasma etches. The resulting ICP plasma processed surfaces are oxygen
and carbon free, have a good reflection high-energy electron diffraction (RHEED) pattern, and have only a small amount of
mercury depletion, x = 0.22 to 0.47 (where x is the ratio of Cd to␣Hg), in the first 25 ? to 30 ? of the HgCdTe. Nanofeatures of the as-grown HgCdTe are retained during
the process and are believed to be indicative of the fundamental defect mechanisms in the different HgCdTe etched surfaces.
Results from these experiments strongly suggest that ICP plasma processes can be used to delineate pixels, etch vias, clean
surfaces, and even produce epi-ready surfaces that would allow HgCdTe to become much more manufacturable, and perhaps allow
the replacement of wet processing in HgCdTe. 相似文献
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《Food Control》2017
The sanitising effect of low concentration neutralised electrolysed water (LCNEW, pH: 7.0, free available chlorine (FAC): 4 mg/L) combined with ultrasound (37 kHz, 80 W) on food contact surface was evaluated. Stainless steel coupon was chosen as attachment surface for Escherichia coli ATCC 25922, Pichia pastoris GS115 and Aureobasidium pullulans 2012, representing bacteria, yeast and mold, respectively. The results showed that although LCNEW itself could effectively reduce survival population of E. coli ATCC 25922, P. pastoris GS115 and low concentration A. pullulans 2012 in planktonic status, LCNEW combined with ultrasound showed more sanitising efficacy for air-dried cells on coupons, with swift drops: 2.2 and 3.1 log CFU/coupon reductions within 0.2 min for E. coli ATCC 25922 and P. pastoris GS115, respectively and 1.0 log CFU/coupon reductions within 0.1 min for A. pullulans 2012. Air-dried cells after treatment were studied by atomic force microscopy (AFM)/optical microscopy (OM) and protein leakage analyses further. All three strains showed visible cell damage after LCNEW and LCNEW combined with ultrasound treatment and 1.41 and 1.73 μg/mL of protein leakage were observed for E. coli ATCC 25922 and P. pastoris GS115, respectively after 3 min combination treatment, while 6.22 μg/mL of protein leakage for A. pullulans 2012 after 2 min combination treatment. For biofilms, LCNEW combined with ultrasound also significantly reduced the survival cells both on coupons and in suspension for all three strains. The results suggest that LCNEW combined with ultrasound is a promising approach to sanitise food equipment. 相似文献
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B. Joshi S. S. Islam H. S. Mavi Vinita Kumari T. Islam A. K. Shukla Harsh 《Bulletin of Materials Science》2009,32(1):31-35
The laser induced etching of semi-insulating GaAs 〈100〉 is carried out to create porous structure under super- and sub-bandgap
photon illumination (h v). The etching mechanism is different for these separate illuminations where defect states play the key role in making distinction
between these two processes. Separate models are proposed for both the cases to explain the etching efficiency. It is observed
that under sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect
states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric
field in the pore. Formation of GaAs nanostructures is observed using scanning electron (SEM) and atomic force microscopy
(AFM). 相似文献