氮化铝陶瓷与铜界面传热计算机仿真

固体界面热阻是航空航天、低温与超导、微电子技术等领域中研究热点问题，氮化铝陶瓷和金属铜被广泛应用于低温超导装置和集成电路芯片。基于氮化铝陶瓷与金属铜样品之间界面热阻的低温实验，应用MATLAB软件对实验数据进行回归分析，建立了氮化铝陶瓷与铜之间界面热阻与温度、压力等参数的回归分析仿真模型，仿真结果与实验数据有较好的一致性。研究结果对氮化铝陶瓷、铜应用于超导装置和集成电路芯片的传热设计、空间热控制具有重要意义。     

Thermodynamics and kinetics analysis of in-situ synthesizing AlN

AlN powders were prepared by in-situ synthesis technique. It is a reaction of binary molten Al-Mg alloys with highly pure nitrogen. It was confirmed through thermodynamics calculation that Mg element in Al-Mg alloys can decrease oxygen content in the reacting system. Thus, nitridation reaction can be performed to form AlN. Moreover, an analysis of kinetics shows that the nitridation reaction of Al-Mg alloys can be accelerated and transferred rapidly with the increment of Mg content.     

Simulation analysis of directivity and optimization of the array of the AlN thin film PMUT array

The relatively low piezoelectric constant of the aluminum nitride piezoelectric film limits the development and application of the piezoelectric micro-machined ultrasonic transducer based on the aluminum nitride. Therefore, the directivity of the piezoelectric micro-machined ultrasonic transducer array is studied for this problem. First, the far-field sound pressure and normalized directivity function of the transducer array are calculated according to the Rayleigh principle. Furthermore, the effects of array element radius, array element spacing, array element number and operating frequency on the beam width, direction sharpness angle and sidelobe level of the array are analyzed, and the transducer array is optimized. Finally, based on the optimization results, area and filling efficiency, the final structure size of the transducer array is determined and the sound pressure distribution visually simulated. The results show that the optimized transducer array has an ideal sound pressure distribution, good directivity and sharp main lobe. The-3dB beamwidth of the main lobe is about 9 ° and the sidelobe level is about 0.228.     

Ag70-Cu28-Ti2活性封接AlN陶瓷

研究了在真空条件下AlN陶瓷真空活性封接的情况,使用的活性焊料是Ag70-Cu28-Ti2熔炼焊片。通过试验可以得到该活性焊料在AlN片上润湿性良好,获得的AlN/AlN接头达到了气密性要求(漏气速率小于1×10-10Pa.m3/s),平均强度值分别为1.49 kN/cm2(抗弯)和2.00 kN/cm2(抗剪切)。通过扫描电镜及电子探针仪观察了焊层形貌和元素分布,分析了连接强度较高的原因。通过XRD确定了焊接的冶金结合及新相的生成。     

蓝宝石衬底上原子级光滑AlN外延层的MOCVD生长

在蓝宝石衬底表面无氮化、低Ⅴ/Ⅲ比的情况下,采用1200℃的衬底温度、5kPa反应室气压,用MOCVD方法在蓝宝石衬底上生长出了表面原子级光滑的AlN外延层.原子力显微镜测试表明其平均粗糙度为0.44nm,X射线衍射(0002)回摆曲线FWHM为166".实验结果和分析表明,极性和气相反应是影响AlN表面形貌的主要原因.以原子级光滑的AlN为模板生长出了高质量的高Al组分的n型AlGaN,证实了AlN模板具有较好的质量.     

AlN外延薄膜的生长和特征

文章研究了AlN薄膜的晶体质量、表面形貌、应力等性质与AlN生长工艺的依赖关系。通过对低温成核厚度、成核温度和高温生长AlN所用Ⅴ／Ⅲ比的研究，制备出了具有较好晶体质量的AlN薄膜。高分辨三晶X射线衍射给出AlN薄膜的(002)和(105)的半高宽分别为16．9arcsec和615arcsec，接近国际上报道的较好结果。原子力显微镜对表面形貌的分析表明AlN薄膜的粗糙度为5．7nm。拉曼光谱表明E2(high)模向高能方向移动，说明蓝宝石上外延的AlN薄膜处于压应变状态。光学吸收谱在204nm处具有陡峭的带边吸收，也表明了AlN外延薄膜具有较好地晶体质量。     

High frequency response of Bragg reflector type film bulk acoustic wave resonator

Abstract

We fabricated a Bragg reflector type FBAR using AlN piezoelectric with quarter wavelength thickness, where the Bragg reflector was composed of W-SiO₂ pairs. By numerical simulation considering actual acoustic losses of each layer, we analyzed the frequency response of the resonator and could explain it using an equivalent circuit with parasitic elements. The Effective electromechanical coupling constant (K ² _eff ) and the Quality factor (Q_s ), figures of merit of the resonator, were about 1.1% and 307, respectively.</ab>     

Sintering of aluminum nitride by using alumina crucible and MoSi2 heating element at temperatures of 1650 °C and 1700 °C

Aluminum nitride (AlN) ceramics, prepared with Y₂O₃ and CaO sintering additives, have been densified in an Al₂O₃ crucible at temperatures of up to 1650 °C and 1700 °C using a conventional MoSi₂ heating element furnace. The results of this study show that relative densities in excess of 99% of theoretical and a relatively high-thermal conductivity of 147 W m⁻¹ K⁻¹ have been achieved for feedstock materials prepared with combined addition of 1 wt.% Y₂O₃ and 1 wt.% CaO. All of the phases in sintered samples have been shown to be crystalline AlN and minor amount of secondary phases, were detected such as enriched Y- and Ca-aluminates by the XRD patterns, back-scattered imagery and microprobe analysis. The advantage of using the particular experimental system and sintering condition is considered to be amenable to lower production cost and enhance the feasibility of mass production. Critical temperature for AlN densification to obtain the highest density is about 1650 °C.     

A parametric study of AlN thin films grown by pulsed laser deposition

High quality AlN thin films were grown at 200–450°C on sapphire substrates by laser ablation of Al targets in nitrogen reactive atmosphere. The nitrogen pressure was varied between 10⁻³ and 10⁻¹ mbar. The reactive gas pressure during irradiation and the temperature of the substrate were found to essentially influence the quality of the layers. X-ray diffraction analysis evidenced the formation of highly orientated layers for a very restrictive set of parameters. Other analysis techniques, like X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, optical transmission spectroscopy have been used to evidence the good stoichiometry and purity of the films. The characteristics of these films were compared with those of AlN thin films deposited in similar experimental conditions, on Si (100) and Si (111) substrates.     

FORMATION OF AIN WHISKERS BY NITRIDATION OF AI/AIN POWDERS

The aluminum nitride whiskers were synthe-sized by the nitridation of Al/AlN powders in a flowing ni-trogen atmosphere. The whiskers were about 0. 5μm in diame-ter and 10～20μm in length, and they were straight and hadsmooth surfaces. The morphology of the whiskers were stud-ied by means of SEM and TEM. The AlN whiskers weregrown via vapor-solid (VS) mechanism.