Reactive wetting behavior and mechanism of AlN ceramic by CuNi-Xwt%Ti active filler metal

In order to propel the application of the developed CuNi-Xwt%Ti active filler metal in AlN brazing and get the universal reactive wetting mechanism between liquid metal and solid ceramic, the reactive wetting behavior and mechanism of AlN ceramic by CuNi-Xwt%Ti active filler metal were investigated. The results indicate that, with the increasing Ti content, surface tension for liquid CuNi-Xwt%Ti filler metal increases at low-temperature interval, but very similar at high-temperature interval, which influence the wetting behavior on AlN ceramic obviously. CuNi/AlN is the typical non-reactive wetting system, the wetting process including rapid wetting stage and stable stage. The wettability is depended on surface tension of the liquid CuNi filler metal completely. However, the wetting process of CuNi-8wt.%Ti/AlN and CuNi-16 wt%Ti/AlN reactive wetting system is composed by three stages, which are rapid wetting stage decided by surface tension, slow wetting stage caused by interfacial reaction and stable stage. For CuNi-8wt.%Ti/AlN and CuNi-16 wt%Ti/AlN reactive wetting system, although the surface tension of liquid filler metal is the only factor to influence the instant wetting angle θ₀ at rapid wetting stage, the reduced free energy caused by interfacial reaction at slow wetting stage plays the decisive role in influencing the final wettability.     

Improving quality and machining efficiency of hole during AlN trepanning with nanosecond pulse laser

Aluminum nitride (AlN) is essential material to electronics industry. Compared to traditional machining methods, laser trepanning has become one of the most popular options for hole machining on AlN. Due to involvement of multiple parameters, such as scanning number, laser beam jump direction, scanning mode, and filling circle interval, the optimization of hole quality is complex. To tackle this problem, this paper systematically studied hole trepanning on AlN using nanosecond pulse laser in order to examine the relationship among trepanning parameters and hole dimensions, quality, and machining efficiency. Thereby, the optimized combination of parameters could be obtained to improve the quality and efficiency of hole machining. Moreover, possible effect mechanisms like effect of laser fluence on hole diameters, effects of jump directions and scanning modes on hole machining quality were discussed. Most importantly, it is the first time that the relationship among trepanning parameters, hole quality, and machining efficiency is presented.     

AlN-Pr2O3液相烧结SiC陶瓷

以AlN、Pr2O3做为SiC陶瓷液相烧结的复合助剂,选定不同的助剂含量(5wt％～ 20wt％)和不同的助剂摩尔比例(Pr2O3/AlN=1/3、1/1、3/1),在1800～2000℃温度下,采用热压和无压烧结的方法制备SiC陶瓷样品,并对这些陶瓷样品的性能进行了研究.实验结果表明,助剂比1/3组的样品显示出更有效地促进SiC陶瓷致密化,该组样品无压烧结最大相对密度为87％,热压烧结具有最高的相对密度96.1％、维氏硬度23.4 GPa、抗弯强度549.7MPa、断裂韧性5.36 MPa·m1/2,显微结构中可观察到晶粒拔出现象,断裂模式为沿晶断裂.     

酸洗提纯AlN粉体的研究

氮化铝(AlN)粉体中的金属杂质与氧化是影响其纯度和性能发挥的主要因素,而酸洗是提纯AlN粉体的有效手段.实验采用磷酸(H3 PO4)、硝酸(HNO3)、氢氟酸(HF)和盐酸(HCl)对AlN粉体进行酸洗提纯,主要研究了酸洗过程中酸液的选择与配比对提纯效果的影响.实验结果表明:这四种酸均显著降低了AlN粉体表面的金属杂质含量,而HF和HNO3的混合酸具有更好的提纯效果,特别能降低其中的Na、W、Fe等金属杂质,而且还可通过HF与Al2O3的反应有效去除氧杂质.HF/HNO3酸液的适宜配比为HF:HNO3=2:1,在该条件下酸洗后的AlN粉体中,金属杂质含量均下降到100 ppm以下,氧含量仅为1.2wt%.     

Synthesis of AlN nanopowder coated with a thin layer of C,using a thermal plasma reactor

High-purity nanocrystalline aluminum nitride powders were synthesized by using a 12?kW non-transferred arc plasma. The synthesis was conducted in a versatile, new designed, one-chamber thermal plasma reactor (TPR). The novel experimental assembly incorporated better working conditions like: high temperature gradient between the crucible and reactor's wall, and high super-saturation of the system by nitrogen and carbon. Thermodynamic modelling of the synthesis was conducted in order to achieve the best conditions for AlN formation. In this study, aluminum discs of Al 1100 were used as precursor material and pure nitrogen was the only gas used as reagent and plasmogenic gas.Nanopowders collected from reactor's wall were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-Ray diffraction (XRD). Synthesized h-AlN nano-powders were found to be free of oxides and aluminum metal. A thin carbon-layer around the particles was detected. TEM results indicated that the carbon-layer was around 5 and 10?nm. This outcome could make a significant difference with other synthesis reported in the literature since the occurrence of the carbon-layer, could delay AlN oxidation, prevent hydration, and could avoid the agglomeration of the particles.     

磁控反应溅射AIN薄膜光学性能研究

为了制备光学性能良好的AlN薄膜.采用磁控反应溅射法制备了氮化铝(AlN)薄膜,利用椭圆仪、分光光度计、傅立叶变换光谱仪对AlN薄膜进行了相关光学性能的分析.结果表明:在波长为400～1100nm时,AlN薄膜的折射率为2.0～2.4,透过率都在88%以上;在200～300nm远紫外光范围内,薄膜具有强烈的吸收;在红外吸收光谱中,677cm-1处存在1个强烈的吸收峰,说明薄膜中已经形成了AlN.     

工艺参数对氮化铝陶瓷表面激光金属化层电阻的影响

目的 提高氮化铝陶瓷表面激光金属化层的导电性能。方法 采用正交试验设计方案,使用30 W纳秒光纤激光打标机制备了氮化铝陶瓷表面激光金属化试样,测量了金属层的电阻。通过极差分析和方差分析方法分析了激光工艺参数及其交互作用对氮化铝陶瓷表面激光金属化层电阻值的影响规律。结果 在本研究激光工艺参数及其取值范围内,激光功率对氮化铝表面激光金属化层电阻的影响最为显著,增大激光功率有利于降低氮化铝表面激光金属化层的电阻值。采用优化工艺参数(激光功率30 W、频率30 kHz、扫描速度100mm/s)单次激光扫描制备激光金属化层的电阻为2.25?/mm。随着重复扫描次数的增加,功率不同的激光表面金属层的电阻值向相反方向转变：小功率激光表面金属层电阻值随扫描次数增加而迅速减小,大功率激光表面金属层电阻值随扫描次数增加而增大。经10次重复扫描后,激光功率3 W(相应的激光能量密度约为15.3 J/cm²)激光金属化层的电阻值低于功率分别为30 W和18.75 W激光金属化层的电阻值。结论 采用30 W激光单次扫描,或者采用3 W激光多次扫描,有利于提高氮化铝表面激光金属化层的导电性。     

离子源对中频反应磁控溅射AlN薄膜结构和性能的影响

采用离子源辅助中频反应磁控溅射技术在单晶硅及硬质合金基体上沉积AlN薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、显微硬度计、薄膜结合强度划痕试验仪等对薄膜结构及性能进行表征,着重研究了离子源对中频反应磁控溅射AlN薄膜结构和性能的影响.结果表明:离子源的辅助沉积有利于AlN相的合成,当离子源功率大于0.7 kW时,AlN沿(100)晶面择优取向明显,当离子源功率为1.3 kW时,所沉积膜层有向非晶化转变的趋势.同时,随着离子源功率的增加,所沉积的AlN薄膜致密度和膜、基结合力均显著提高,而膜层沉积速率和硬度则呈先上升后降低的规律.     

Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films

Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100–200 watts RF power and 5–8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of ⁴G_5/2 → ⁶H_5/2, ⁴G_5/2 → ⁶H_7/2, ⁴G_5/2 → ⁶H_9/2, and ⁴G_5/2 → ⁶H_11/2 transitions. Photoluminescence (PL) provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.     

CuZr/AlN纳米复合材料的组织与性能(英文)

采用粉末冶金方法制备高强高导铜合金基纳米复合材料(CuZr/AlN)。采用光学显微镜(OM)和高分辨率透射电镜(HRTEM)等方法研究不同烧结工艺对复合材料组织与性能的影响,研究固溶时效对CuZr/AlN力学性能的影响。结果表明:试样的组织致密,晶粒大小在0.2μm左右;试样的布氏硬度随着复压制压力和烧结温度的升高而升高;试样的布氏硬度开始随着锆含量的增加而升高,但当锆颗粒含量大于0.5%时,复合材料的布氏硬度开始降低。试样的抗弯强度随着复压制压力和烧结温度的升高而提高,抗弯强度在锆含量为在0.5%时最大。900°C固溶后的布氏硬度比固溶前的布氏硬度低,试样在500°C和600°C时效后,布氏硬度增加,在700°C发生过时效现象。