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61.
Wire-shaped zinc samples were resistively volume heated as part of a fast-capacitor discharge circuit. Time-resolved measurements with submicrosecond resolution of the current through the specimen, the voltage drop across it, and the thermal expansion of the specimen as a function of time allow determination of the enthalpy, electrical resistivity, and density at different temperatures up to superheated liquid states of zinc far above the normal boiling point. High static pressures, up to 3800 bar of the ambient medium water, were used. An estimate of the critical pressure for zinc is given by investigations of the stability of the sample with a framing CCD camera, taking pictures of different samples varying the ambient static pressure. The critical volume and the critical temperature are obtained by means of an extrapolation of measured data at different pressures.Paper presented at the Fourth International Workshop on Subsecond Thermophysics, June 27–29, 1995, Köln, Germany. 相似文献
62.
63.
A theoretical model is presented to describe the effect of ion beam bombardment rate on the formation of tetrahedral amorphous carbon (ta-C) films. The critical ion energy, Ec, corresponding to a 50% sp3 content in the films, is found to be dependent on both the effective thermal resistance and the ion beam bombardment rate. In the model, the ‘window’ width in the ion energy scale for the formation of ta-C material increases with decreasing deposition rate and with a reduction in the effective thermal resistance, until limited by lower and upper boundary thresholds. Experimental data are reproduced by the model. The plasmon energy, which correlates with sp3 fraction, is found experimentally of be higher for lower deposition rate and smaller effective thermal resistance. Data points for high sp3 content ta-C films deposited on silicon substrates at room temperature occupy a region in the ion energy-deposition rate (E-r) diagram similar to that predicated from the theory. 相似文献
64.
In this work we investigated the mechanism of the electrochemical intercalation reactions in rf sputtered nickel oxide thin films electrodes by two techniques: mechanical stress change measurements by means of an optical technique and mass changes using an electrochemical quartz microbalance (EQCM). The experiments were performed in alkaline electrolytes containing cations of the first column of the periodic table. Reversible mass and volume changes were observed. In order to explain these experimental results, an exchange reaction is proposed, in which the oxidation process is accompanied by the deinteractional of a relative large number of “light” cations, simultaneously with the intercalation of a smaller number of heaviest cations. 相似文献
65.
It is shown that steady-state kinetic data do not allow the discrimination between the redox and associated mechanisms of the partial oxidation reactions. A discrimination between these mechanisms was performed using transient experiments. The obtained rate expressions are in agreement with experimental kinetic data for catalytic partial oxidation of o-xylene.
An influence of the conjugate oxidation of a catalyst surface on dynamics and kinetics of the heterogeneous catalytic oxidative reactions is considered. Computing simulation of methane oxidative coupling of methane reaction at lowered temperature and elevated pressure has been performed. It showed that the reaction order with respect to oxygen exceeding unity is consistent with the chain branching mechanism of the reaction in the presence of TiSi2 and TiB2 and showed the important role of the branching chain cycles in the low-temperature OCM reaction at elevated pressure. 相似文献
66.
用湿化学法制备了纳米极氧化铟超细粉体。利用透射电子显微镜、图像分析仪研究了纳米氧化铟粉体的形貌、尺寸分布和结构特征。结果表明,氧化铟粉体呈方片状,尺寸在10-30nm,化学组分高纯,达到了纳米级粉末要求;粉体的尺寸均匀,但在不同条件下制得的粉体,其尺寸相差较大;制备得到的氧化铟超细粉体的结构为体心立方。 相似文献
67.
GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl3 consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al2 O3 were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature. 相似文献
68.
EfectsofTraceZinconTougheningandStrengtheningofSteelsShiChongzhe①ABSTRACTImpactbendandstatictensilecomparisontestsarecarriedo... 相似文献
69.
J. Weise Dr.‐Ing. O. Yezerska M. Busse M. Haesche V. Zanetti‐Bueckmann M. Schmitt 《Materialwissenschaft und Werkstofftechnik》2007,38(11):901-906
Micro‐porous syntactic foams were produced by means of integration of glass bubbles into aluminium and zinc matrices. Preforms of glass bubbles were pressure infiltrated with the alloys AlSi9Cu9 ans ZnAl4Cu using squeeze casting. The preforms were sintered thermically without the use of bonding agents. Using the combination of different sintering steps syntactic foams with locally different densities could be produced. The mechanical properties of the foams were tested indicating a high compression strength of the foams and a very good compression energy absorption. Furthermore, corrosion behaviour and behaviour at higher temperatures were investigated. 相似文献
70.
Charles A. Bateman Lijie Zhang Helen M. Chan Martin P. Harmer 《Journal of the American Ceramic Society》1992,75(5):1281-1283
It is experimentally observed that the peritectic reaction, 211 + liquid → 123, can be driven essentially to completion in 1 h at an undercooling of only ∽30°C. The kinetic data, together with the observed microstructures, are inconsistent with the normal mechanism of the peritectic reaction. It is proposed that the mechanism of the reaction involves dissolution of 211 particles into the liquid and precipitation of solid 123. The aligned grain structure is explained through sympathetic nucleation of new 123 grains on existing grains. 相似文献