氨基官能化的硅基介孔材料的合成与表征

分别以十六烷基三甲基溴化铵(CTAB)和三嵌段共聚物(P123)为模板剂,正硅酸乙酯(TEOS)为硅源,合成两种硅基介孔材料MCM-41和SBA-15.通过有机硅烷偶连法将3-氨丙基三乙氧基硅烷(APTES)嫁接到已合成的两种介孔材料上,得到氨基官能化的硅基介孔材料.利用XRD、FT-IR、N2吸附-脱附和ICP含量测定对合成的材料进行表征.     

纳米MCM-49分子筛催化二异丙苯烷基转移反应催化性能研究

采用动态水热合成方法制备了纳米MCM-49分子筛,采用XRD、N2吸附-脱附、SEM和FTIR等手段对其结构和酸性进行了表征,考察了纳米MCM-49分子筛催化二异丙苯与苯烷基转移反应的催化性能.研究结果表明,所合成的分子筛为高结晶度的纳米MCM-49分子筛.在二异丙苯与苯的烷基转移反应中,适当提高反应温度、降低空速、降低分子筛硅铝比有利于提高二异丙苯转化率和异丙苯收率.在烷基转移反应温度为200℃,二异丙苯空速为2 h-1条件下,二异丙苯转化率达到86.51%,异丙苯收率接近95%.     

Effect of annealing on the characteristics of Au layers grown on the high-temperature deposited Ni50Fe50 layers

80 nm-thick Ni₅₀Fe₅₀ layers were sputter-deposited on glass substrates at 400 °C and then Au layers were sputter-deposited on the Ni₅₀Fe₅₀ layers. The Au/Ni₅₀Fe₅₀ bilayer films were annealed in a vacuum of 5×10⁻⁴ Pa from 250 to 450 °C for 30 min or 90 min. The characteristics of the Au layers were studied by Auger electron spectroscopy, field emission scanning electron microscopy, X-ray diffraction and a four-point probe technique. When the annealing temperature reaches 450 °C, Fe and Ni atoms diffuse markedly into the Au layer and the Fe content is more than the Ni content. When the annealing temperature is lower than 450 °C, the grain size of the Au layers does not change markedly with annealing temperature. However, as the annealing temperature reaches 450 °C, the annealing promotes the grain growth of the Au layer. As the annealing temperature exceeds 300 °C, the resistivity of the bilayer films increases with increasing annealing temperature. The diffusion of Fe and Ni atoms into the Au layer results in an increase in the resistivity of the annealed bilayer film. Large numbers of Fe and Ni atoms diffusing into the Au layer of the annealed Au/Ni₅₀Fe₅₀ bilayer film lead to a significant decrease in the lattice constant of the Au layer.     

Preparation and CO gas-sensing behavior of Au-doped SnO2 sensors

A study on the low-temperature CO gas sensors based on Au/SnO₂ thick film was reported. Au/SnO₂ powders, with different Au loading from 0.36 to 3.57 wt%, were prepared by a deposition-precipitation method. Thick films were fabricated from Au/SnO₂ powders. The Au/SnO₂ thick-film sensors exhibited high sensitivity to CO gas at relatively low operating temperature (83-210 °C). We also reported the effect of the Au loading in Au/SnO₂ on the CO gas sensing behavior. The optimal Au loading in as-prepared Au/SnO₂ was 2.86 wt%.     

磁控溅射法镀制氮化铝薄膜特性研究

氮化铝薄膜具有高折射率,良好的化学稳定性,耐磨摩、高电阻等特性在微电子器件和光学薄膜中有着广泛地应用.本文研究了反应式磁控溅射方法利用Ar/N2混合气体镀制氮化铝薄膜的工艺过程,实验表明在高真空和高泵浦速率条件下,放电电压直接依赖于反应气体珠浓度.薄膜的折射率,消光系数和薄膜硬度都依赖于氮气浓度的比例.通过工艺研究,找到了氮气在不同浓度下对氮化铝薄膜的折射率,消光系数以及薄膜硬度的影响,找出了镀制氮化镀制氮化铝薄膜的最佳工艺参数.在Ar/N2工作气体中氮气含量保持在40%条件下,用反应式磁控溅射方法,可以精确镀制出良好的氮化铝薄膜,其中折射率范围在2.25~2.4之间,消光系数为10-3,薄膜显微硬度大于20GPa.该薄膜可以广泛应用于微电子器件和光电器件上.     

共沉淀富集分离矿石中微量金、铂、钯

研究了硒、铜、银、砷作为共沉淀剂。富集分离地质样品中金、铂、钯的最佳条件。在3mol/L HCl介质中，以4mg硒和5mg铜、银、砷对金、铂、钯进行共沉淀富集，采用孔雀绿分光光度法测定金．DDO分光光度法测定铂、钯，回收率均在95％-102％之间。通过对含金矿样加入铂、钯标准样品的回收实验，结果令人满意。     

表面活性剂对纳米MCM-41分子筛分散性的影响

采用聚乙二醇为分散剂,十六烷基三甲基溴化铵为模板剂,正硅酸乙酯为硅源,在室温碱性条件下合成了粒径为40～60 nm的单分散纳米球形MCM-41分子筛.利用XRD、TEM和N2吸附脱附等手段研究了聚乙二醇用量对纳米球形MCM-41的分散性和介孔结构的影响.结果表明,表面活性剂PEG的加入,可以明显改善纳米颗粒的分散性并且对颗粒形貌影响不大;表面活性剂PEG的加入,样品的六方结构有序性和孔尺寸发生变化.PEG量在1%～20%范围内,样品仍具有较高的六方孔道有序性;PEG量过大(60%)有序性明显下降.随着PEG加入量的增加,纳米MCM-41的晶面间距增大,孔尺寸增大.适量的聚乙二醇可以得到有序性好、比表面积大、孔径均一和孔隙率大的单分散纳米球形MCM-41分子筛.     

苯芴酮-溴代十六烷基三甲胺分光光度法测定析出铅中的锡

用硝酸-酒石酸分解试样,在含有酒石酸(0.16mol/L)的盐酸溶液中,锡(Ⅳ)与苯芴酮-溴代十六烷基三甲胺(CTMAB)生成有色络合物,采用分光光度法直接测定析出铅中的锡.此络合物在波长530nm处有最大的吸光度,摩尔吸光系数ε=6.74×104,锡(Ⅳ)含量为0.25～80μg/50mL,符合比尔定律.该法快速、准确、重现性好,适应于析出铅中含锡0.005%～1.60%的测定.     

Indium oxide thin film based ammonia gas and ethanol vapour sensor

A sensor for ammonia gas and ethanol vapour has been fabricated using indium oxide thin film as sensing layer and indium tin oxide thin film encapsulated in poly(methyl methacrylate) (PMMA) as a miniature heater. For the fabrication of miniature heater indium tin oxide thin film was grown on special high temperature corning glass substrate by flash evaporation method. Gold was deposited on the film using thermal evaporation technique under high vacuum. The film was then annealed at 700 K for an hour. The thermocouple attached on sensing surface measures the appropriate operating temperature. The thin film gas sensor for ammonia was operated at different concentrations in the temperature range 323–493 K. At 473 K the sensitivity of the sensor was found to be saturate. The detrimental effect of humidity on ammonia sensing is removed by intermittent periodic heating of the sensor at the two temperatures 323K and 448 K, respectively. The indium oxide ethanol vapour sensor operated at fixed concentration of 400 ppm in the temperature range 293–393 K. Above 373 K, the sensor conductance was found to be saturate. With various thicknesses from 150–300 nm of indium oxide sensor there was no variation in the sensitivity measurements of ethanol vapour. The block diagram of circuits for detecting the ammonia gas and ethanol vapour has been included in this paper.     

ZnCl2/Si-MCM-41催化剂的制备、表征及催化性能研究

通过浸渍法制备了新型的环境友好催化剂ZnCl2／Si-MCM-41。考察了它在苯与苄氯的苄基化反应上的活性，探索了制备ZnCl2／Si-MCM-41负载试剂的最佳制备条件。研究表明：ZnCl2／Si-MCM-41的最佳制备条件是负载量为4mmol/g，活化温度为150℃，活化时间为5h。通过XRD、TG、FT-IR对催化剂进行表征，发现ZnCl2在较低负载量时，ZnCl2充分分散在载体孔道内，对催化剂载体的结构没有明显的影响，而且此负载试剂上苯的苄基化反应的活性中心不是晶体ZnCl2，而是存在于载体表面的非晶态ZnCl2物种。