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71.
Principal Component Analysis (PCA) is a well-known technique, the aim of which is to synthesize huge amounts of numerical data by means of a low number of unobserved variables, called components. In this paper, an extension of PCA to deal with interval valued data is proposed. The method, called Midpoint Radius Principal Component Analysis (MR-PCA), recovers the underlying structure of interval valued data by using both the midpoints (or centers) and the radii (a measure of the interval width) information. In order to analyze how MR-PCA works, the results of a simulation study and two applications on chemical data are proposed. 相似文献
72.
Preparation and characterisation of titanium dioxide films for catalytic applications generated by anodic spark deposition 总被引:1,自引:0,他引:1
The advanced plasma electrochemical process of anodic spark deposition (ASD) was used to generate photoactive titanium dioxide films on titanium metal substrates. A shift to easier-to-machine substrates was demonstrated by the deposition of a titanium film with physical vapour deposition onto different materials such as glass, silicon, and stainless steel prior to ASD. Obtained films were characterised by scanning electron microscopy, surface area measurement (Brunnauer-Emmett-Teller method, BET), X-ray diffraction, electron-probe microanalysis, and glow discharge spectroscopy. Additionally, film thickness was determined by eddy current measurements. Standard ASD conditions were defined as 180 V applied voltage over a 180 s hold time, a voltage ramp of 20 V/s, a duty cycle of 0.5 and a frequency of 1500 Hz. Most prominent characteristics of the titanium films produced under these standard conditions are a film thickness of ≤80 μm, a surface area of approximately 51 m2/g (BET) and an anatase content of approximately 30% and rutile content of approximately 70%. Furthermore, the film formation process is elucidated and the dependence of film thickness on deposition time and the dependence of the anatase and rutile content on the deposited mass are shown for varying ASD conditions. 相似文献
73.
The effects of positive and negative gate-bias stress on organic field-effect transistors (OFET) based on tantalum (Ta)/tantalum pentoxide (Ta2O5)/fluorinated copper phthalocyanine (F16CuPc) structure are investigated as a function of stress time and stress temperature. It is shown that gate-bias stress induces a parallel threshold voltage shift (ΔVT) of OFETs without changes of field-effect mobility μEF and sub-threshold slope (ΔS). The ΔVT is observed to be logarithmically dependent on time at high gate-bias appropriate to OFET operation. More importantly, the shift is directional, namely, be large shift under positive stress and almost do not move under negative stress. The threshold voltage shift is temperature dependent with activation energy of 0.51 eV. We concluded that threshold voltage shift of the OFET with F16CuPc as active layer is due to charge trapping in the insulator in which trapped carriers have redistribution. 相似文献
74.
The second-order non-linear susceptibility components were measured using 1.064 μm incident light for ZnO thin films of various thicknesses from 24.4 to 283 nm self-assembled on sapphire substrates by laser molecular beam epitaxy. It was found that the values of the non-linear susceptibility for the films are almost the same as those of bulk material, except the samples with thicknesses ranging from 35 to 64.8 nm, which show a large enhancement effect. For the sample with a thickness of 44.4 nm, the second-order non-linear susceptibility components were found to be approximately 14.7 pm/v for d31, 15.2 pm/v for d15, and −83.7 pm/v, a value approximately 14 times that of the bulk material, for d33. The second-order non-linear coefficient enhancement in the thin films may be resulted from the microcrystallite structures. 相似文献
75.
Thermal conductivity of gallium arsenic nitride (GaAsN) epilayer on gallium arsenide (GaAs) substrate prepared by molecular beam epitaxy technique was measured using pulsed photothermal reflectance technique. Three-layer model incorporated thermal boundary resistance was applied to extract the thermal properties from the sample's photothermal response. Within the thickness ranging from 20 to 80 nm, no thickness dependent relationship with thermal conductivity of GaAsN epilayer was found, and the average thermal conductivity is approximately 27 W/mK at room temperature. The thermal boundary resistance at the Au/GaAsN interface is in the order of 10−8 m2K/W. 相似文献
76.
Determination of surface heat-transfer coefficients of steel cylinder with phase transformation during gas quenching with high pressures 总被引:1,自引:0,他引:1
In numerical simulation of quenching process, the boundary conditions of temperature field and stress field are very important, in which the boundary conditions of temperature field are very complicated. In order to simulate the thermal strains, thermal stresses, residual stresses and microstructure of the steel during gas quenching by means of the numerical method, it is necessary to obtain an accurate boundary condition of temperature field. The surface heat-transfer coefficient is a key parameter. The explicit finite difference method, non-linear estimate method and the experimental relation between temperature and time during quenching have been used to solve the inverse problem of heat conduction. The relationships between surface temperature and surface heat-transfer coefficient of cylinder have been given. The non-linear surface heat-transfer coefficients include the coupled effects between phase transformation and temperature. In calculation, physical properties were treated as the function of temperature and volume fraction of constituent. The results obtained have been shown that this technique can determine effectual the surface heat-transfer coefficients during gas quenching. 相似文献
77.
《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2004,520(1-3):116-119
In the past year and a half, the Cryogenic Dark Matter Search (CDMS) collaboration has been active at the Soudan mine in installing a system for running ZIP detectors that will be used to search for dark matter in the form of Weakly Interacting Massive Particles. Presently, there is an operating cryogenic system, working electronics, a functional data acquisition and analysis system, passive shielding, an active muon veto, and 12 ZIP detectors. Six of the 12 ZIP detectors have been tested in situ and are fully operational with acceptable noise profiles. CDMS is in the process of commissioning the experiment and expects to be making a background measurement by the end of summer 2003. 相似文献
78.
V. Mandic N. Mirabolfathi P. Meunier C. L. Chang L. Baudis P. L. Brink M. J. Attisha J. -P. F. Thompson R. J. Gaitskell R. W. Schnee B. Serfass R. W. Ogburn W. Rau J. Filippini The CDMS Collaboration 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2004,520(1-3):171-174
We present new measurements on a Cryogenic Dark Matter Search (CDMS) detector with electron, neutron, and gamma sources. The measurements have been performed to investigate the dead layer of one of the CDMS Z-dependent Ionization Phonon germanium detectors. The dead layer has been studied at both charge electrodes and at different electric field intensities. We also present a method to remove the dependence of athermal phonon measurements on event position. 相似文献
79.
Nonlinear aspects of the magnetization process in vibrating iron are studied by using the harmonics of both acoustic and magnetic coil signals. The prediction of elementary hysteresis theory that the harmonics should all vary as 2 is borne out to a considerable extent, and some of the exceptions appear to mark the onset of another mechanism of damping at the higher amplitudes. The prediction of only odd harmonics is less well obeyed by these data. 相似文献
80.
The interactions between dislocations (D) and point defects (PD) are one of the most important causes of mechanical damping in metals. In the past 40 years, many experimental results have been obtained and published, from which it appears that two fundamental behaviors can be observed when dislocations interact with motionless point defects: thermally activated behaviors and athermal behaviors. In this paper, it is shown that these two observed behaviors can be consistently explained by a “brownian picture” of the motion of dislocations interacting with PD distributed at different distances from the dislocation glide plane. 相似文献