FBG反射谱展宽效应在轨道传感器中的应用研究

实验验证了光纤Bragg光栅(FBG)在非均匀应力下的反射谱展宽效应,并将这种展宽效应应用于轨道列车轮重、位置和轴数的监测。将FBG传感器置于铁轨特定位置,当受非均匀应力时,列车轮重的增加会引起FBG反射谱展宽,反映为检测光强增大。利用模型验证了FBG反射谱分别在温度、均匀应力及非均匀应力下的变化,根据有限元分析模拟铁轨模型的应变分布,进而通过模型实验和实际测试验证了这种方案的可行性。     

Light induced electropolymerization of poly(3,4-ethylenedioxythiophene) on niobium oxide

The photoelectrochemical polymerization of poly(3,4-ethylenedioxythiophene), PEDOT, was successfully realized on anodic film grown to 50 V on magnetron sputtered niobium. Photocurrent Spectroscopy was employed to study the optical properties of Nb/Nb₂O₅/PEDOT/electrolyte interface in a large range of potential, and to get an estimate of the band gap and flat band potential of both the oxide and the polymer. Scanning Electron Microscopy was used to study the morphology of PEDOT. Both the optical and morphological features of the photoelectrochemically grown polymer were compared with those showed by PEDOT electropolymerized on gold conducting substrate.     

HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

Ultra thin HfAlO_x high-k gate dielectric has been deposited directly on Si_1−xGe_x by RF sputter deposition. The interfacial chemical structure and energy-band discontinuities were studied by using X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and electrical measurements. It is found that the sputtered deposited HfAlO_x gate dielectric on SiGe exhibits excellent electrical properties with low interface state density, hysteresis voltage, and frequency dispersion. The effective valence and conduction band offsets between HfAlO_x (E_g = 6.2 eV) and Si_1−xGe_x (E_g = 1.04 eV) were found to be 3.11 eV and 2.05 eV, respectively. In addition, the charge trapping properties of HfAlO_x/SiGe gate stacks were characterized by constant voltage stressing (CVS).     

Effects of annealing temperature on the phase formation,optical, photoluminescence and magnetic properties of sol-gel YFeO3 films

YFeO₃ (YFO) thin films were deposited onto quartz substrates via sol-gel spin-coating technique and annealed at different temperature ranged between 650 and 900 °C. The impact of annealing temperature on the phase formation, microstructural, optical, photoluminescence (PL) and magnetic properties of the films were systematically investigated. X-ray diffraction analysis revealed an amorphous structure in film annealed at 650 °C and formation of hexagonal-YFO (h-YFO) phase in films annealed at 750–800 °C. The films annealed at 850–900 °C exhibited an orthorhombic-YFO (o-YFO) structure. Atomic force microscopy images of h-YFO films showed homogeneous surface with uniform particles size and shape. The particle size increased and had irregular shape in o-YFO films. The average particle size was 44 and 117 nm, while the root square roughness was 1.38 and 2.55 nm for h- and o-YFO films annealed at 750 and 850 °C, respectively. The optical band gap (E_g) was 2.53 and 2.86 eV for h- and o-YFO films annealed at 750 and 850 °C, respectively. The PL spectra of h-YFO films were red-shifted compared with that of o-YFO films. The PL emission related to near band edge was observed at 459.0 and 441.9 nm for h- and o-YFO films annealed at 750 and 850 °C, respectively. The magnetization was enhanced with the increasing of annealing temperature and has the value of 4.8 and 12.5 emu/cm³ at 5000 Oe for h- and o-YFO films annealed at 750 and 850 °C, respectively.     

Ultrasonic wave characteristics of a monolayer graphene on silicon substrate

The present work deals with an ultrasonic type of wave propagation characteristics of monolayer graphene on silicon (Si) substrate. An atomistic model of a hybrid lattice involving a hexagonal lattice of graphene and surface atoms of diamond lattice of Si is developed to identify the carbon-silicon bond stiffness. Properties of this hybrid lattice model is then mapped into a nonlocal continuum framework. Equivalent force constant due to Si substrate is obtained by minimizing the total potential energy of the system. For this equilibrium configuration, the nonlocal governing equations are derived to analyze the ultrasonic wave dispersion based on spectral analysis. From the present analysis we show that the silicon substrate affects only the flexural wave mode. The frequency band gap of flexural mode is also significantly affected by this substrate. The results also show that, the silicon substrate adds cushioning effect to the graphene and it makes the graphene more stable. The analysis also show that the frequency bang gap relations of in-plane (longitudinal and lateral) and out-of-plane (flexural) wave modes depends not only on the y-direction wavenumber but also on nonlocal scaling parameter. In the nonlocal analysis, at higher values of the y-directional wavenumber, a decrease in the frequency band gap is observed for all the three fundamental wave modes in the graphene–silicon system. The atoms movement in the graphene due to the wave propagation are also captured for all the tree fundamental wave modes. The results presented in this work are qualitatively different from those obtained based on the local analysis and thus, are important for the development of graphene based nanodevices such as strain sensor, mass and pressure sensors, atomic dust detectors and enhancer of surface image resolution that make use of the ultrasonic wave dispersion properties of graphene.     

Synthesis,characterization and photo-catalytic studies of mixed metal oxides of nano ZnO and SnOx

Novel mixed metal oxides of Zinc and Tin (MZOTO) were synthesized by a simple co-precipitation method. The effect of blending varying compositions of SnO_x (x=1, 2) to ZnO has been evaluated, and it was found that the crystal structure, morphology, optical properties and photo-catalytic behavior were dependent on the percentage of SnO_x. The obtained samples were characterized using XRD, EDAX, FESEM, UV–vis spectroscopy, Photoluminescence, etc. XRD data revealed that the ZnO and SnO_x co-exist as mixture and their structures were found as hexagonal and cubic/orthorhombic respectively. FESEM image intricate about the morphology of the MZOTO prepared in 1:0.5 ratio providing nano flower structures that resemble like Chrysanthemum species. The band gaps of all the obtained MZOTOs were determined from UV–vis reflectance spectra using Kubelka-Munk relation. Photoluminescence emission studies revealed that the recombination of excited e⁻ with the h⁺ of ZnO is greatly influenced by SnO_x nanoparticles. Visible light photo-catalytic activities of MZOTOs were followed spectrophotometrically against the degradation of crystal violet solution. MZOTO2 obtained in the ratio of 1:0.5 shows better catalytic efficiency compared to other samples, degrading crystal violet completely within 40 min. The reusability and free radical trapping experiments were performed to study the performance and mechanism of MZOTO2 as the photo-catalyst. The photo catalytic efficiency of 1:0.5 MZOTO was higher due to the presence of flower-like structures that effectively captivated more photons from the sunlight.     

PbS/CoS–Pani composite semiconductor films

The synthesis and characterization of polyaniline (Pani) films embedded with PbS/CoS core–shell, having semiconductor characteristics are reported in this study. Mn²⁺ doped, PVA capped PbS/CoS core-shell particles dispersed in Pani matrix served as photoluminescent boosters. The absorption intensity of the core-shell particles–Pani hybrid increased significantly with wide spectrum response and hypsochromic effect. The Mott–Schottky plot showed a negative slope for PbS/CoS-Pani film, indicating typical p-type semiconductivity. The Tauc plot for PbS/CoS-Pani film revealed the direct transition type with a band gap of 2.36 eV. Solid state photovoltaic cells have been fabricated with PbS/CoS-Pani as the hole conductor. The cells show photocurrent of 0.93 mA/cm², voltage of 432 mV and energy conversion efficiency of 0.93%. The scanning electron micrograph revealed periodic arrangement in the polymer matrix. This arrangement of the core-shell particles in the continuous polymer matrix with high carrier density promises this material for the photoelectrochemical applications.     

流体特性对周期管路弯曲振动带隙的影响

基于声子晶体理论,将液压管路设计成由钢管和挠性软管组成的周期结构,利用其带隙特性实现液压系统的振动控制。分别采用传递矩阵法和有限元法对周期管路的能带结构和振动传递特性进行了计算,同时深入研究了压力和黏度对周期管路带隙特性的影响。结果表明,周期管路在1 000 Hz以下的低频范围内具有良好的减振性能,能够有效的抑制液压管路中弯曲振动的传播;流体压力导致周期管路弯曲振动带隙升高,而流体黏度则其没有任何影响。文中的研究为液压管路的振动控制提供了一条新的技术途径。     

Reciprocity law experiments in polymeric photodegradation: a critical review

Accelerating the photodegradation of polymeric materials is of great practical interest in weathering research. Acceleration can be achieved by exposing polymeric materials to a high radiant flux; however, questions have arisen within the weathering community as to whether high radiant flux results can be extrapolated to in-service flux levels. Experiments designed to test this premise are called reciprocity law experiments. An extensive review has been conducted to assess the state-of-the-art of reciprocity law experiments in the photography, photoconductivity, photo-medicine, photobiology, and polymer photodegradation literatures. From this review, the Schwarzschild law (a power law generalization of the reciprocity law) appears to model adequately photoresponse vs. radiant flux for most materials and systems. A band theory model has been presented to explain variations in the Schwarzschild law coefficients and other experimental phenomena commonly associated with reciprocity experiments. Obstacles to the general acceptance of high radiant flux, laboratory-based experiments are discussed.     

Ge_xSi_1-x/Si异质结构的近红外吸收光谱测量

测量分析了采用 RRH/VLP—CVD 方法外延生长的 Ge_xSi_(1-x)/Si 异质结构中 Ge_xSi_(1-x)合金薄层的近红外吸收光谱。由谱线计算出 Ge_(0.15)Si_(0.85)与 Ge_(0.45)Si(0.55)合金层的带隙分别为1.02eV 和O.88eV,与相同组分的体合金一致。结果表明用红外吸收光谱测量研究异质结构薄层材料的能带结构及带隙是一种准确、简便的方法。