首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2248篇
  免费   204篇
  国内免费   130篇
电工技术   54篇
综合类   91篇
化学工业   842篇
金属工艺   138篇
机械仪表   77篇
建筑科学   9篇
矿业工程   103篇
能源动力   95篇
轻工业   29篇
石油天然气   56篇
武器工业   6篇
无线电   284篇
一般工业技术   498篇
冶金工业   256篇
原子能技术   19篇
自动化技术   25篇
  2024年   3篇
  2023年   53篇
  2022年   67篇
  2021年   73篇
  2020年   75篇
  2019年   63篇
  2018年   62篇
  2017年   79篇
  2016年   81篇
  2015年   77篇
  2014年   101篇
  2013年   122篇
  2012年   128篇
  2011年   190篇
  2010年   132篇
  2009年   136篇
  2008年   117篇
  2007年   163篇
  2006年   130篇
  2005年   99篇
  2004年   93篇
  2003年   82篇
  2002年   78篇
  2001年   59篇
  2000年   46篇
  1999年   40篇
  1998年   47篇
  1997年   24篇
  1996年   38篇
  1995年   17篇
  1994年   18篇
  1993年   17篇
  1992年   14篇
  1991年   13篇
  1990年   4篇
  1989年   5篇
  1988年   9篇
  1987年   1篇
  1986年   4篇
  1985年   4篇
  1984年   5篇
  1983年   4篇
  1982年   2篇
  1981年   3篇
  1978年   2篇
  1976年   2篇
排序方式: 共有2582条查询结果,搜索用时 15 毫秒
31.
粒径均匀的氧化铟粉末的研制   总被引:4,自引:0,他引:4  
以金属铟,硫酸,氨水为原料,通过工艺条件的选择,制备出过滤性良好的氢氧化铟沉淀物。该沉淀物经过干燥,煅烧不需将氧化物粉碎就可以得到粉末状氧化铟。最佳工艺条件为:反应液中铟离子初始浓度调节在70g/L以下,碱添加量为铟含量的3-4倍;沉淀反应温度控制在90℃以上。  相似文献   
32.
The effect of zinc ions added to silica film on the electrical and structural properties of a silica/indium tin oxide two-layer film which had been prepared by solution coating for electromagnetic shielding of displays was studied. The volume resistivity of the undoped silica/indium tin oxide film was more than 3 times as high as that of the zinc-doped silica/indium tin oxide film. The addition of divalent cations, zinc ions, to the overcoated layer led volume resistivity of the two-layer film to decrease significantly and also caused a long-term increase in stability. The decrease in volume resistivity was due to the addition of zinc ions that changed the interface ionization and helped to enhance the electrical conductivity in the two-layer film.  相似文献   
33.
The impregnation and sol–gel preparation methods were investigated to develop high activity catalysts and understand the significance of the indium–aluminium interaction on aluminasupported indium catalysts in NO x reduction with propene. Active In/alumina catalysts with a very high surface area (270 m2/g) and thermal stability were prepared in controlled conditions by sol–gel processing. When Al isopropoxide and In nitrate in ethyl glycol were used as precursors in aqua media, indium atoms were incorporated evenly distributed as a thermally stable form in the aluminium oxide lattice structure. In wet impregnation it was beneficial to use a certain excess of aqueous In solution (volumes of solution : pores = 2 : 1) to have the highest NO x reduction activity. The catalyst containing dispersed Al on In oxide (58 wt% In, phaseequilibrium preparation method) showed activity at lower temperatures than any other In–Al oxide catalyst or pure In2O3. The adsorption of different reaction intermediates on alumina and stable In2O3 sites were detected by FTIR studies. In/alumina catalysts have active sites to oxidize NO to NO2, partially oxidize HC, form the actual reductant which contains N–H or N–C bonding and react with NO to dinitrogen. The cooperation with indium and aluminium was evident even in the mechanical mixture of sol–gel prepared alumina (301 m2/g) and In2O3 powders (27 m2/g), where the probability for molecularscale intimate contact between indium and aluminium sites was very low (particle size 10–250 m). Shortlived gaseous intermediates and surface migration are the possible reasons for the high catalytic activities on the two physically separated active sites both necessary for the reaction sequence.  相似文献   
34.
Chromated copper arsenate (CCA), an arsenicbased wood preservative, is toxic to human health and the environment. Although CCA is stable in seasoned wood, there are potential dangers during CCA manufacture, lumber treatment, and waste disposal. This research was conducted to study the effectiveness of soy products to replace toxic chromium and arsenic compounds in wood preservative formulations. Three soy product (Arpro 2100, HM 90, and Supro 760) were used as fixative agents in preservative solutions containing anhydrous CuSO4 and Na2B4O7·10H2O. The decay resistance of treated wood blocks was measured by a soil-block culture method. Despite the large molecular sizes of copper-protein and copper-boron-protein complexes, southern pine sapwood was treatable with these preservative formulations. Wood samples treated with >6 kg°m−3 CuSO4 and 7.5 kg·m−3 soy product, and subsequently leached for 3 d and exposed to the decay fungus Gloeophyllum trabeum (Fr.) Mur., sustained only 0.5% weight loss over 12 wk. Wood samples needed 40 kg·m−3 CuSO4 and 50 kg·m−3 soy protein to resist the copper-tolerant decay fungus Postia placenta (Fr.) M. Lars. & Lomb. These results suggest that soy-based wood preservatives can prevent wood products from fungal attack and can replace CCA.  相似文献   
35.
硼酸镁晶须的合成研究   总被引:18,自引:0,他引:18  
报道了硼酸镁晶须的合成研究结果。硼酸镁晶须是一种性能价格比高的晶须产品,利用熔盐法合成出长10—50μm、直径0.5—2μm的硼酸镁晶须。还就硼酸镁晶须增强复合材料的研究和硼酸镁晶须工业化的前景作了展望。  相似文献   
36.
真空蒸馏法从铟中脱除Cd、Tl的研究   总被引:2,自引:0,他引:2  
邓勇  杨斌  杜国山  刘大春  徐宝强 《云南化工》2007,34(1):37-39,43
介绍真空蒸馏法取代传统试剂法从铟中脱除镉和铊。通过实验研究了采用真空蒸馏的方法从铟中脱除铊的最佳工艺条件。实验表明,控制蒸馏温度950℃,恒温时间40m in,即可使残余物中铊的含量为0.0006%,铟的挥发率2.14%。  相似文献   
37.
Columnar wurtzite grains were formed in sputtered ZnO thin films deposited on a plastic polyethylene terephthalate substrate. Selected-area diffraction patterns reveal that the columnar grains in the sputtered films present two preferred growth planes, namely, the basal (0002) and prismatic (100) growth planes. The diffraction patterns obtained also confirm that the microstructure of sputtered indium tin oxide thin films is amorphous in nature. Tensile tests indicate that the fracture strain of the ZnO thin film occurs between 1.73% and 2.14%, while the fracture strain of the indium tin oxide thin film occurs between 0.24% and 0.67%. Thus, the fracture toughness of the sputtered ZnO thin film is greater than that of the sputtered indium tin oxide thin film. High-resolution transmission electron microscopic images demonstrate that edge and screw dislocations could be identified in the sputtered ZnO thin films. Moreover, edge and screw dislocation movements may, respectively, be observed in the basal- and prismatic-oriented ZnO columnar grains of the sputtered ZnO thin films. Our results indicate that movements of the edge and screw dislocations in the basal- and prismatic-oriented ZnO columnar grains account for the plastic deformation of the investigated ZnO thin films under tensile stress.  相似文献   
38.
The formation and stability of BaAl2O4 and BaCeO3 in Pt-Ba/Al2O3 and Pt-Ba/CeO2 based NOx storage-reduction (NSR) catalysts has been investigated using kinetic measurements, X-ray diffraction, thermal analysis and X-ray absorption spectroscopy. In as-prepared state, the Ba-component in the NSR catalysts was made up of amorphous BaO and BaCO3. The formation of BaAl2O4 started above 850 °C, whereas the formation of BaCeO3 was already observed at 800 °C and was faster than that of BaAl2O4. The stability of BaAl2O4 and BaCeO3 in various liquid and gaseous atmospheres was different. BaAl2O4 was rapidly hydrated at room temperature in the presence of water and transformed to Ba(NO3)2 and γ-alumina in the presence of HNO3, whereas BaCeO3 was decomposed to much lower extent under these conditions. Interestingly, BaCeO3 was transformed to Ba(NO3)2/CeO2 in the presence of NO2/H2O at 300–500 °C. Also, the presence of CO2 led to decomposition of barium cerate, which has important consequences for the catalyst ageing under NOx-storage conditions and can be exploited for regeneration of thermally aged NSR-catalysts.  相似文献   
39.
马来酸酐接枝聚乙烯对无卤阻燃PE-HD护套料的改性研究   总被引:3,自引:0,他引:3  
研究了马来酸酐接枝聚乙烯对无卤抑烟阻燃PE-HD护套料的改性效果,并进行了增韧机理上的探讨。采用扫描电镜对复合材料进行了断面观察,并测试了材料的力学性能、流变性能、耐热性能和氧指数。结果表明,马来酸酐接枝聚乙烯能够极大地提高复合材料的界面相容性,增强材料的界面相互作用,提高阻燃剂微粒在树脂基体中的分散效果,同时形成了一个可塑性界面层,所以能够提高材料的韧性。  相似文献   
40.
液晶显示器(liquid crystal display,LCD)的回收处理是资源与环境领域的重要问题。介绍了LCD的组成成分并阐述了其对环境的潜在风险,综述了近年来国内外对废LCD中铟的资源化回收处理技术的研究现状,指出了目前该研究领域中存在的问题及后续的研究方向。  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号