国产螺旋槽密封在进口压缩机上的应用

介绍了国产螺旋槽密封在进口压缩机上的应用，分析了原进口机械-浮环组合密封的失效原因，叙述了改造后国产浮环螺旋槽组合密封的结构和特点。     

Determination of shear strength values according to EN 408

This paper presents the results of 382 shear tests carried out according to EN 408. The test pieces consisted of spruce (Picea abies) and varied in density and ring width orientation (radial, tangential and at an angle of 45° to the steel plates). In addition pieces containing pith and knots were tested. The paper discusses problems observed when using this test configuration and shows that the test results do not support the characteristic shear strength values as given in EN 338. Moreover, the test results do not support the relationship between characteristic shear strength and characteristic bending strength as given in EN 384.

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Résumé Cet article présente les résultats de 382 essais de cisaillement menés conformément à EN 408. Les éprouvettes d’essai sont en épicéa (Picea abies) et présentent une variabilité en termes de masse volumique et d’orientation des cernes d’accroissement (radiale, tangentielle, à un angle de 45° par rapport aux plaques métalliques). Des éprouvettes supplémentaires contenant du cœur et des nœuds ont également été testées. L’article évoque les problèmes qui ont été mis en évidence lors de l’utilisation de ce dispositif expérimental et montre que les résultats expérimentaux ne sont pas en accord avec les valeurs caractéristiques de résistance au cisaillement données dans EN 338. De plus, ces résultats ne confirment pas la relation entre résistance caractéristique au cisaillement et résistance caractéristique à la flexion telle que stipulée dans EN 384.

     

多信道光纤环形网络结构分析

本文对多信道光纤环形网络结构进行了详细分析，推导出环网内平均路经长度和最大直径计算公式，并分析了最佳多信道光纤环网结构。     

苯并口恶嗪-环氧化合物-胺类催化剂体系开环聚合反应的研究

采用TLC，GPC，1H－NMR及IR等分析方法，对苯并恶嗪－环氧化合物－胺类催化剂体系的聚合反应进行了研究，表征了产物结构，并探讨了聚合反应机理，结果表明，苯并恶唪－环氧化合物体系在胺类催化剂如苄胺，咪唑的作用下，能发生开环聚合反应，生成低分子量的聚合物。     

CMOS电路中抗Latch-up的保护环结构研究

闩锁是CMOS集成电路中的一种寄生效应,这种PNPN结构一旦被触发,从电源到地会产生大电流,导致整个芯片的失效。针对芯片在实际测试中发现的闩锁问题,介绍了闩锁的测试方法,并且利用软件Tsuprem4和Medici模拟整个失效过程,在对2类保护环(多子环/少子环)作用的分析,以及各种保护结构的模拟基础之上,通过对比触发电压和电流,得到一种最优的抗Latch up版图设计方法,通过进一步的流片、测试,解决了芯片中的闩锁失效问题,验证了这种结构的有效性。     

在ad hoc网络中一种新的节能路由切换模型

提出了一种基于能量消耗的路由切换模型(ERHM),它在路由维护中利用切换技术来使路由的能量消耗最小.仿真结果表明采用切换技术的ERHM模型的能量节省量要比不采用切换技术节约1.5～7.5倍,且节点的移动性越大,能量节约越多.     

正交参数与平纹面

本文证明了一族闭曲线C(t),t∈I,称变闭曲线,在光滑性条件下,具有正交参数u,即当C(t)表为(?)=(?)(u,t)时,有(?)·(?)≡0.接着,文中提出了一种“降维法”,即用一族平行平面将空间曲面截成平面变曲线,并讨论其若干整体性质.     

Photo-reversible Reaction in Polymer Langmuir-Blodgett Films

Preparation of photoreactive Langmuir-Blodgett (LB) films was carried out using polymers/oligomers prepared from long-chain dialkyl esters of di-and tetra-olefins and having cyclobutane rings in the main chain. These polymers/oligomers formed stable monolayers on a water surface when mixed with arachidic acid. These monolayers could be deposited onto a substrate successfully forming Y-type films. The oligomer LB films were polymerized on irradiation. The polymer LB films showed a photo-reversible process between polymers and oligomers, depending on wavelength of the irradiating light. On the basis of spectral data and molecular weight change, this behaviour was found to be caused by cleavage and formation of cyclobutane rings.     

A new approach to the mechanism of chlorine evolution: Separate examination of the kinetic steps using ac impedance on a rotating thin ring electrode

In the absence of a bulk diffusion effect, it is shown for the first time that the impedance spectra for the chlorine evolution reaction on a rotating thin ring electrode comprise three consecutive semicircles in the capacitive half of the complex plane. The first (highest frequency) semicircle is due to the charge-transfer resistance for chloride discharge and the simultaneous chlorine adsorption coupled to the double-layer capacitance. The second semicircle (around 5 Hz) is due to the adsorption and desorption of a chlorine intermediate. The third (lowest frequency, around 0.5 Hz) semicircle is due to the relaxation of surface oxygen species. The impedance data allow the steps of the overall reaction to be examined individually. On a Pt surface the rate of chloride discharge and simultaneous chlorine adsorption (the admittance of the first semicircle) is first order with respect to chloride concentration and has a potential-dependence close to 58 mV/decade. The rate of the adsorption and desorption process (the admittance of the second semicircle) is second order with respect to chloride concentration, and has a potential dependence close to 30 mV/decade. The time constant for the adsorption/desorption processes is ca 20 ms, independent of electrode potential in the range studied. These features are consistent with a mechanism in which a faster discharge reaction (Cl⁻ Cl_ad + e) is followed by a slower surface combination reaction (2Cl_ad → Cl₂), but inconsistent with mechanisms in which ion + atom desorption is predominant, the initial chloride discharge is slow, or a unipositively charged chlorine species is involved.     

Proton and hydrogen formation by cyclohexyl benzene during overcharge of Li-ion batteries

This study provides experimental evidence for proton and hydrogen formation caused by the anodic electropolymerization of cyclohexyl benzene (CHB), which is a popular electrolyte additive for overcharge protection of lithium-ion batteries (LIBs). It is found that considerable H₂ evolution is observed in overcharged LiCoO₂/graphite cells, especially when CHB is included as an electrolyte additive. In order to confirm the proton generation during the CHB oxidation, Pt/Pt-rotating ring disc electrode (RRDE) measurements are performed in 1 M Li(C₂F₅SO₂)₂N ethylene carbonate/ethyl methyl carbonate (1/2, v/v) solutions with and without CHB. The cathodic ring current is intimately correlated to the anodic disc current, and the cathodic reaction at the ring is determined to be the reduction of the proton. The proton generation efficiency during the CHB oxidation is as high as 90%. Proton liberation is also observed during the anodic decomposition of the electrolyte solvents, although it occurs in a much less stoichiometric way compared with that during the CHB oxidation.