A comparison of the diffusion of iodine into CdTe,Hg0.8Cd0.2Te and Zn0.05Cd0.95Te

Studies on the diffusion of iodine into CdTe, mercury cadmium telluride (Hg_0.8Cd_0.2Te, referred to as MCT) and zinc cadmium telluride (Zn_0.5Cd_0.95Te, referred to as ZCT) in the temperature range of 20 to 600°C are compared and discussed. The concentration profiles were measured using a radiotracer sectioning technique. As with the diffusion studies using the halogens into CdTe, the profiles were composed of four parts to which a computer package consisting of the sum of four complementary error functions (erfc) gave satisfactory fits. The diffusivity for the diffusion of iodine into MCT was faster than for the diffusion into CdTe, which was faster than for the diffusion into ZCT. The high diffusivity for the fastest profile part at 20°C indicates that when iodine is diffused from the vapor into these materials, it is not a suitable long term stable dopant in devices where sharp junctions are required.     

Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system

Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data show negligible outdiffusion and cross contamination of Ge in CdTe.     

Band gap uniformity and layer stability of HgTe-CdTe superlattices grown by photon-assisted molecular beam epitaxy

Two material properties important to the application of HgTe/CdTe superlattices for device fabrication are band gap uniformity and thermal stability. In this paper, we present the results of an infrared photoluminescence study of (211)B HgTe/CdTe superlattices grown by photon-assisted molecular beam epitaxy which show that cut-off wavelength uniformity can be controlled to a level commensurate with the demands of advanced infrared detector fabrication. Infrared photoluminescence and transmission electron microscopy were also employed to demonstrate that (211)B HgTe/CdTe superlattices are less prone to interdiffusion than previously believed.     

Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates

Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face.     

脉宽可控的腔倒空射频波导CO2激光器

为了得到脉宽可控的腔倒空射频波导CO2激光器,采用了在陶瓷板上直接开波导槽的方法,构成了多通道Z折叠主本振激光器结构,并在主振波导进行CdTe电光晶体腔内调Q。在理论上计算了加载在CdTe上的高压脉冲下降时间的长短对腔倒空激光脉冲宽度的影响,并通过对高压脉冲电源等效负载参数的调整,得到了脉冲宽度可控的高重频腔倒空激光脉冲。在20kHz,40kHz,65kHz及70kHz的重频工作下,得到了半峰全宽约30ns、峰值功率在2kW以上的腔倒空激光脉冲。结果表明,这种新型腔倒空射频波导CO2激光器满足激光外差成像雷达系统参数要求。     

Ge(211)衬底上分子束外延CdTe薄膜

采用分子束外延在3英寸Ge(211)衬底上生长了10 μm厚的CdTe(211)B薄膜.CdTe表面镜面光亮,3英寸范围厚度平均值9.72 μm,偏差0.3 μm;薄膜晶体质量通过X射线双晶迴摆曲线进行评价,FWHM平均值80.23 arcsec,偏差3.03 arcsec; EPD平均值为4.5×106cm-2.通过研究CdTe薄膜厚度与FWHM和EPD的关系,得到CdTe的理想厚度为8～9 μm.     

Effect of Ar ion irradiation on structural and optical properties of e-beam evaporated cadmium telluride thin films

CdTe thin films were prepared using e-beam evaporation technique. The prepared films were irradiated by Ar⁺ ions at different fluencies using multipurpose aluminum (Al) probe as in-situ. This could also be used in ion bombardment for cleaning the substrate prior to coating. The as grown and Ar⁺ ion irradiated films were confirmed to be of polycrystalline nature with X-ray technique. Ar⁺ ion irradiation enhances the growth of (1 1 1) oriented CdTe crystals and the Cd enrichment on the surface of CdTe thin films. Higher Ar⁺ ion flux helps to grow (2 2 0) oriented CdTe thin film. A considerable change in structural parameters like crystallite size, lattice parameter, internal strain, etc. could be observed as a result of high Ar⁺ ion flux. The applied in-plan stress in both as grown and irradiated film was identified to be of tensile nature. The applied stress was observed between 0.016 and 0.067 GPa for all Ar⁺ ion irradiated samples. As a result of the Ar⁺ ion irradiation, the in-plan stress varies between 1.38×10⁹ and 5.58×10⁹ dyn/cm². The observed bad gap was increased for higher Ar⁺ ion flux. It shows the effect of Ar⁺ ion irradiation on the modifications of optical properties. The observed results were encouraging on the use of simple multipurpose Al probe for Ar⁺ ion irradiation process as in-situ.     

<Emphasis Type="Italic">Ab Initio</Emphasis> Studies of Hydrogen Defects in CdTe

Using first-principles calculations based on density functional theory, we have investigated the nature of H defects in CdTe. The formation energy calculations indicate that the ground state position of the H inside the CdTe lattice depends on charge state: the lowest energy position for H⁰ and H⁺ is at the bond center site, while H⁻ prefers the tetrahedral interstitial site with Cd nearest neighbors (T_Cd). We find that H in CdTe acts as an amphoteric impurity. In p-type samples, H is in a positive charge state, acting as a donor to neutralize the free holes in the valence band, and in n-type samples H acquires an electron, compensating the donors in the sample.     

碲镉汞液相外延薄膜的应力研究

用X射线衍射方法对液相外延(LPE)技术生长的碲镉汞(MCT)外延薄膜和CdTe衬底进行了观察与分析。研究表明:MCT薄膜中存在着不同程度的应力,主要表现为晶格的扭曲(300″～1200″范围),这种扭曲致使外延膜双晶回摆曲线宽化,宽化值为100″～150″,外延膜的晶格扭曲与CdTe衬底的不完整性有对应关系。研究还表明:LPE的生长条件对外延膜中的晶格扭曲也有较大影响。本文还讨论了CdTe衬底晶格扭曲形成的因素并探究了减少外延膜晶格扭曲的方法。