In-situ ESR spectroelectrochemical studies of overoxidation behaviour of poly(3,4-butylenedioxythiophene)

The behaviour of poly(3,4-butylenedioxythiophene) (PBuDOT), a relative of poly(3,4-ethylenedioxythipohnene) PEDOT within the poly(3,4-alkylenedioxythiophene) family, has been investigated at potentials above its electrochemical stability threshold using in situ ESR spectroelectrochemistry. The aim was to investigate the effect of electrochemical overoxidation on the charge carrying species, namely polarons, normally generated and annihilated during reversible redox doping and dedoping reactions, by determining the potential dependencies of spectroscopic parameters of the ESR spectra of the polymer over a selected potential range. Specific features of the trends of these dependencies allowed also for an evaluation of presence of the second type of charge carrying species—diamagnetic bipolarons and the effects of their interactions with polarons at different potentials. Around 1.5 V, where the boundary of electrochemical stability of the polymer lies, sharp drop of the concentration of paramagnetic centres has been observed together with a transitory narrowing of the ESR line. These changes were found to be irreversible as evidenced by the course of subsequent reduction half-cycle, which differed from the one for a not overoxidised polymer, observed in previous studies. Aided by the results of electrochemical studies it was concluded that the overoxidation process leads to a degradation of the polymer most probably due decrease of the conjugation length of the main chain π-bond through cross-linking or addition reactions. While the electrochemical results pointed to a non-complete degradation of the polymer, the specific parameters of the ESR line in the reduction half-cycle indicate that the remaining spins are confined to isolated segments of a partially degraded polymer where their behaviour resembles oligomer-like radicals.     

Mobility Influences on the Capacity of Wireless Cellular Networks

Capacity has always been a major concern in wireless networks. This letter studies the impact of mobility on the overall system capacity in wireless cellular networks. In this letter, we present a simple system model which we developed to capture the inherent relationships among system capacity, new call blocking probability, handoff dropping probability, call terminating probability, and bandwidth utilization rate. We investigate the complex relationship between mobility and capacity‐related parameters. Through simulation, we demonstrate that mobility has a significant impact on capacity and is reversely proportional to the bandwidth reserved for handoff traffic.     

A novel open-loop high-speed CMOS sample-and-hold

A new open-loop high-speed CMOS sample-and-hold is presented. Based on new method for further reduction of voltage-dependent charge injection, a new CMOS sample-and-hold was designed. Simulation results confirm the effectiveness of this method. Over 10 dB improvement in signal-to-noise ratio, compared to the signal-to-noise ratio of conventional bottom plate sampling S/Hs was achieved with this method. A comparison between newly designed S/H and the bottom-plate sampling S/H is presented.     

Unconventional Charge Density Wave Arising from Electron–Phonon Interaction

We report of a theoretical study on quasi-one dimensional unconventional charge density wave (UCDW) driven by electron–phonon interaction. Within mean field theory, we find that the wavevector dependence of the coupling leads to a momentum dependent single particle gap on the Fermi surface. The presence of small energy single particle excitations around the gap nodes significantly changes the optical conductivity compared to the conventional CDW result. In addition to that, the collective phase excitation arising from fluctuation of the order parameter leads to further qualitative changes of the conductivity and results in an effective mass that is nonmonotonic in temperature.      

Integrated Personal Mobility Architecture: A Complete Personal Mobility Solution

The high expectations and demand for users to access the Internet from anywhere at anytime has made user mobility an important part of the design and development of the next generation mobile communications and computing. Traditionally user mobility has been divided into two areas: Terminal Mobility and Personal Mobility. In recent years terminal mobility has focused on the movement of the terminal and developed extensions to IP protocols such as Mobile IP. In contrast, personal mobility has only received limited attention, and is somewhat lagging behind. This research has either focussed on personal mobility in communications or personalisation of operating environments. As a result, to date no framework for providing true personal mobility has emerged. In this paper, we introduce a new personal mobility framework called IPMoA (Integrated Personal Mobility Architecture), which integrates both aspects of personal mobility to provide a complete personal mobility solution, and illustrate the viability of this approach through a proof-of-concept implementation.     

一种新的HEMT小信号模型参数提取方法

介绍了一种高电子迁移率晶体管(HEMT)的小信号参数提取方法——综合多偏置点优化参数提取法。该文首先推导并提出了器件的模型、确定外部参数和内部参数，其次介绍了多偏置点优化算法。最后，以PHEMT器件为例进行鲁棒性和精确性测试，实验采用一系列随机起始值，结果表明，提取的参数值与经验值相差小于1％。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

The role of the American Board of Professional Psychology in professional mobility.

This article describes the role of certification by the American Board of Professional Psychology (ABPP) in easing the process by which psychologists move beyond their original jurisdictional boundaries to practice psychology. Meeting the requirements for licensure or certification in the various jurisdictions can be a difficult task because these requirements vary considerably from jurisdiction to jurisdiction. Other mechanisms that are available to facilitate this process include the Certificate of Professional Qualification in Psychology issued by the Association of State and Provincial Psychology Boards and certification by the National Register of Health Service Providers in Psychology. The ABPP certificate/diploma has been regarded by many state psychological associations and state boards of psychology as an appropriate way in which to recognize psychologists who are eligible for licensure/certification in a jurisdiction because of the examination requirements for board certification. (PsycINFO Database Record (c) 2010 APA, all rights reserved)