AlSn20Cu/Steel双金属板(带)复合轧制过程的厚度匹配

通过对AlSn20Cu/Steel双金属板(带)复合轧制过程变形区变形规律的分析，确定了轧制过程的总变形率与各分层变形率的关系，解决了实际生产中各分层原料的厚度匹配问题。     

Thermodynamic calculation of S−Sb system and Cu−S−Sb system

Sb₂S₃ and CuSbS₂ have been proposed as alternative earth-abundant absorber materials for thin-film solar cells. However, no thermodynamic study of the S−Sb binary system and the Cu−S−Sb ternary system were investigated. In this paper, The S−Sb system and the Cu−S−Sb system are calculated utilizing the so-called CALPHAD (CALculation of PHAse Diagrams) technique. Using TEM-EDS and XRD, Cu_0.9Sb₁S₂ is experimentally confirmed at the Cu₁Sb₁S₂ and Sb₂S₃ two-phases region in the isothermal section at 673 K of the Cu−S−Sb ternary system. Given the asymmetric shape and miscibility gap of the liquidus in the S−Sb phase diagram, the associate solution model for the liquid phase is adopted. The solution phases (liquid, bcc, fcc) are treated with the Redlich–Kister equation. The compounds S₃Sb₂, Cu₃SbS₃, Cu₁₂Sb₄S₁₃, CuSbS₂, and Cu₃SbS₄ are described as a stoichiometric compound. A set of self-consistent thermodynamic parameters of the S−Sb binary system and the Cu−S−Sb ternary system are obtained. The calculated results are in good agreement with the experimental data. This study provides a set of reliable thermodynamic parameters to the Cu−Sb−S thermodynamic database, and a cost-effective tool to design material synthesis experiments and manufacturing processes.     

A copper/polyimide Metal-base packaging technology

A unique substrate MCPM (Mitsubishi Copper Polyimide Metal-base) technology has been developed by applying our basic copper/polyimide technology.¹ This new substrate technology MCPM is suited for a high-density, multi-layer, multi-chip, high-power module/package, such as used for a computer. The new MCPM was processed using a copper metal base (110 × 110 mm), full copper system (all layers) with 50-μm fine lines. As for pad metallizations for the IC assembly, we evaluated both Ni/Au for chip and wire ICs and solder for TAB ICs. The total number of assembled ICs is 25. To improve the thermal dispersion, copper thermal vias are simultaneously formed by electro-plating. This thermal via is located between the IC chip and copper metal base, and promotes heat dispersion. We employed one large thermal via (4.5 mm^?) and four small vias (1.0 mm^?) for each IC pad. The effect of thermal vias and/or base metal is simulated by a computer analysis and compared with an alumina base substrate. The results show that the thermal vias are effective at lowering the temperature difference between the IC and base substrate, and also lowering the temperature rise of the IC chip. We also evaluated the substrate’s reliability by adhesion test, pressure cooker test, etc.     

基于2,4-二羟基苯甲酸铜(Ⅱ)为载体的硫氰酸根电极的电位响应

制备了基于一种简单的金属铜配合物2,4-二羟基苯甲酸铜(Ⅱ)(Cu(Ⅱ)DHBA)为载体的PVC膜硫氰酸根离子(SCN-)选择性电极。该电极在1.0×10-1～1.0×10-6mol/LSCN-浓度范围内呈现斜率为-59.5mV/dec的近Nernst电位响应,检测下限为9.1×10-7mol/L。利用紫外可见光谱及交流阻抗技术初步探讨了电极对SCN-呈现的选择性电位响应机理。该电极作为直接电位分析法的指示电极,成功运用于实验室废水中硫氰酸盐含量的测定。     

Cu—Cr合金电极触头板铸件的熔制

含０．４％～１．０％Ｃｒ的Ｃｕ－Ｃｒ合金具有优良的导电、导热性能，铸件经热处理强化后可获得较高的综合力学性能。近年来该合金作为一种新材料被广泛地用于制作电子工业、电器设备上的电极触头板、接触环、夹持体等零件。Ｃｕ－Ｃｒ合金存在易氧化吸气、凝固范围窄、收缩较大、易形成集中缩孔等缺陷，这些铸造特性给生产优良的Ｃｕ－Ｃｒ合金铸件带来一定的困难。以采用常规的熔炼设备和造型材料熔铸出Ｃｕ－Ｃｒ合金铸件——高压大电流电极触头板为例讨论这一熔铸的工艺方法。     

Study on diffusion welding SiCp/ZL101 with Cu interlayer

Through the vacuum diffusion welding SiCp/ZL101 aluminum with Cu interlayer,the effect of welding parame-ter and the thickness of Cu on the welded joint property was investigated,and the optimal welding parameters were putforward at the same time.The microstructure of joint was analyzed by means of optical-microscope,scanning electron mi-croscope in order to study the relationship between the macro-properties of joint and the microstructure.The results showthat diffusion welding with Cu interlayer could be used for welding aluminum matrix composites SiCp/ZL101 successfully.     

CYCLIC DEFORMATION BEHAVIOUR OF Cu SINGLE CRYSTALS ORIENTED FORDOUBLE SLIP Ⅱ. Persistent Slip Bands and Deformation Bands

用光学显微镜和扫描电镜研究了双滑移取向（［０３４］，［１１７］）Ｃｕ单晶循环饱和后的表面形貌，塑性分切应变幅（γｐｌ）低于１０~（－３）时，［０３４］晶体表面上要为主滑移系的驻留滑移带（ＰＳＢｓ）占据，次滑移只在边缘区域启动，其ＰＳＢｓ细窄（＜１μｍ），体积百分数在１％以下．γｐｌ＞１０~（－３）时，次滑移开始在试样的中部启动，同时，表面出现二种贯穿晶体的宏观形变带（ＤＢＩ，ＤＢＩＩ），滑移带在形变带内集中．［１１７］晶体在γｐｌ＝４．４×１０~（－４）时，双滑移现象已十分明显．γｐｌ＞１０~（－３）时，表面也形成与前者相似的形变带．ＤＢＩ的惯习面与主滑移面平行（［０３４］晶体）或接近（［１１７］晶体），ＤＢＩＩ的惯习面则与前者垂直，文章讨论了形变带形成的可能原因．     

空冷淬火Cu-Zn-Al合金马氏体结构及稳定化现象

利用Ｘ射线衍射强度分析、透射电镜观察、相变点测量等方法研究了空冷淬火态Ｃｕ１８Ｚｎ１４Ａｌ合金马氏体结构及其稳定化现象。认为该合金空冷淬火可获得长程有序完全的Ｍ１８Ｒ马氏体，其有序组态为Ａｌ原子与Ｃｕ原子、Ｚｎ原子与Ｃｕ原子两种近邻（ｎｎ）有序（Ｋ＝偶，Ｈ＋Ｋ／２＝奇），以及产生Ｋ＝奇的衍射中Ａｌ原子与Ｚｎ原子次近邻（ｎｎｎ）有序。其基面原子分布为：Ⅰ—１４２５Ａｌ＋１１２５Ｃｕ、Ⅱ—Ｃｕ、Ⅲ—１８２５Ｚｎ＋７２５Ｃｕ。与此相对应，该合金相应为Ｈｅｕｓｌｅｒ结构。该合金在充分有序化的条件下仍存在马氏体稳定化。     

控轧控冷工艺对高强度锚杆钢组织和性能的影响

随着矿井深度的增加,对锚杆支护强韧性的要求越来越高,为了应对这一情况,需要研发出更高强度的锚杆钢。利用锚杆钢研究了轧制工艺、冷却工艺与珠光体、铁素体相比例,析出相析出行为及力学性能的关系。研究结果表明,在中轧后、精轧前采用适当水冷+回复段处理的复合工艺可使晶粒更细小、组织更均匀。对超高强度锚杆钢进行热压缩变形试验,由热模拟试验结果确定相转变温度为A_c1=737 ℃、A_c3=886 ℃。最终筛选出入精轧温度为810 ℃、回复段温度为800 ℃时,可获得的晶粒尺寸达4 μm,珠光体体积分数为66.8%,铁素体体积分数为33.2%,珠光体片层间距达200 nm;另外调整V、Cr、N等析出以提高锚杆钢的强韧性,较低的回复温度有利于细小、弥散、V(C/N)析出相的析出,V(C/N)的析出可进一步改善锚杆钢的力学性能。由该控轧控冷工艺轧制的锚杆钢屈服强度为780 MPa、抗拉强度为930 MPa、硬度为291HV、伸长率为20%。     

Ni2+、Cu2+、Zn2+对氧化亚铁硫杆菌氧化 活性影响

为研究金属离子对氧化亚铁硫杆菌（Acidithiobacillus ferrooxidans,At.f）氧化活性的影响,通过测定经初步驯化的At.f菌在不同初始pH下的生长活性,开展不同浓度梯度的Ni2+、Cu2+、Zn2+及三种金属离子共存时对At.f菌的氧化活性影响的试验。结果表明,当初始pH为1.8时,At.f菌生长活性最好,且低浓度的Ni2+、Zn2+对At.f菌氧化活性影响较小,对两种金属离子的耐受浓度均在20 g/L以上;而该细菌对Cu2+比较敏感,当Cu2+浓度为2.5 g/L时,菌株的生长活性明显下降,特别是10 g/L时,对At.f菌的氧化能力有显著的抑制作用。三种金属离子同时存在时对At.f菌氧化活性的影响大于单一金属离子,当三种金属离子的浓度均为2.5 g/L时,在48小时内对At.f菌的氧化能力有显著的抑制作用,当三种金属离子的浓度均为5 g/L时,80小时时菌株对Fe2+的氧化率极低,说明At.f菌需要经过多种金属离子共存驯化培养后才能更好地运用于多金属复杂矿物的处理。