论普通型胶辊表面不处理的合理工艺参数

论述了普通胶辊表面不处理的性能特点和存在问题，技术措施和合理工艺参数，提高了成纱条干水平，减少缠绕和磨损。     

VN合金在大规格角钢生产中的应用研究

大规格角钢主要用于铁塔制造和建筑结构中。唐钢过去用16Mn钢生产Q345级别角钢，因供轧化学成分范围较窄，供轧率偏低。通过加入V-Fe合金及VN合金进行微合金化，设计了16Mnv(N)钢种生产角钢，使角钢综合性能有显著提高。分析比较了16Mn、16MnV及16MnV(N)角钢的性能，认为在大规格高强度角钢生产中，用VN合金进行微合金化，其效果是最佳的。     

Investigation of structural properties of ITO thin films deposited on different substrates

The influence of the substrate nature on the structure and morphology of ITO thin films grown by thermal evaporation in vacuum is investigated. The as-prepared metal films with Sn/In molar ratio of 0.1 were subsequently annealed for 2 h at 723 K in air (to obtain tin doped indium oxide), then annealed in vacuum at 523 K, followed by UV irradiation (to reduce the electrical resistivity). Irrespective of substrate nature, XRD data evidence a (222) preferential orientation in films. Substrate nature, annealing in vacuum and UV irradiation influence the structure, morphology, optical, electrical and surface wetting properties of the films' surface.     

Industrialization of High Performance Sintered NdFeB Magnets

Sintered Nd-Fe-B magnet was manufactured by advanced equipment via a SC (Strip casting) technology.It has integrative performance.     

可焊性高强度钢筋的开发与生产

为进一步开发国际钢材市场，研制开发了符合加拿大可焊性高强度钢筋标准要求的高强度钢筋．制定了化学成分及力学性能内控标准，分析了生产工艺各环节对成分和性能的影响，依据试验结果，在全面统计分析的基础上，调整了冶炼成分，生产的531批钢筋全部合格．通过直方图及回归分析，说明了制定的产品生产工艺可行，也为今后的生产提供了理论依据。     

Chemical compositions and optical properties of HfOxNy thin films at different substrate temperatures

High-k HfO_xN_y thin films have been grown by radio frequency (rf) reactive sputtering of metal Hf target in N₂/Ar/O₂ ambient at different substrate temperatures. The chemical compositions of the films have been investigated as a function of substrate temperature by X-ray photoelectron spectroscopy (XPS). XPS measurements showed that nitrogen concentration increases with an increase in substrate temperature. Room-temperature spectroscopic ellipsometry (SE) with photon energy 0.75–6.5 eV was used to investigate the optical properties of the films. SE results demonstrated that refractive index n increases with an increase in substrate temperature. Based on TL parameters which were obtained from the best fit results used in a simulation of the measured spectra, meanwhile, we conclude that the energy band gap (E_g) decreases with an increase in substrate temperature.     

纳米薄膜的分类、特性、制备方法与应用

介绍了纳米薄膜的分类以及纳米薄膜的光学、力学、电磁学与气敏特性;综述了现有的溶胶鄄凝胶法、LB鄄膜法、电化学沉积法、化学汽相沉积、低能团簇束沉积法、真空蒸发法、溅射沉积、分子与原子束外延、分子自组装等纳米薄膜制备技术;概括了纳米薄膜的应用。     

电控平行排列液晶光栅的光衍射特性研究

对电控平行液晶光栅的理论进行了分析,并配以结构原理图。通过对平行排列及90°扭曲排列液晶指向矢的计算,得出液晶盒中相应的折射率、相位差与电压之间的关系图,两者经比较证明平行排列更具适用性,并在实验中观测到了平行排列液晶光栅衍射特性与电压的关系。     

Effect of Organic Additives on Electrochemical Surface Precipitation and Polymorphism of CaCO3

The inhibition effect of three organic additives on the precipitation and polymorphism of CaCO₃ deposited on gold surfaces was investigated using electrochemical and microscopic techniques. Additives, two polyacrylic acid (PAA) polymers with different molecular weights (Mw 2100, Mw 30,000), and 1,2,4,5‐benzenetetracarboxylic acid (BTCA), were either added to the solution before or during deposition. In the presence of 100 ppm of one of the three additives in solution, almost no scale was observed on the surface for at least 24 hours. In the presence of lower concentrations of PAA Mw 2100, only distorted calcite crystals were obtained while with PAA Mw 30,000 the polymorph was spherical vaterite. A mixture of calcite and vaterite was observed with the BTCA additive. Addition of the polymers inhibits further nucleation and growth even if added after partial deposition of CaCO₃ while BTCA has no effect once nucleation has started. The results indicate that the inhibit ion effect of the PAA polymers is due to adsorption on the electrode surface while the effect of BTCA is related to chelation of calcium ions in solution.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.