A comparative study of thin film insulation techniques for gold electrodes

The increasing use of microelectrodes in small sample volumes and biological environments require the use of thin film insulators. The insulating ability of the thin film insulators electrophoretic paint, polyimide, allylphenol phenol copolymer and an epoxy dip coat have been assessed using gold wires coated in the relevant film. Insulation was assessed by recording the current from the wires in a solution of known redox couple. The effect of prolonged storage in aqueous solutions was also investigated. The most successful insulating approach, with regards to insulative ability, prolonged use in aqueous environments and speed of application, was the combination of cathodic electrophoretic paint followed by polyimide.     

冀中坳陷东北部石炭—二叠系储层特征及勘探方向

渤海湾盆地冀中坳陷石炭—二叠系残留分布区即坳陷东北部的文安斜坡、杨村斜坡、大城凸起等地区,受印支—燕山和喜马拉雅期强烈的后期构造运动改造,历经差异升降和拉张断陷两大构造发育阶段,致使东、西部剥蚀带的埋藏史表现为沉降—抬升—沉降、沉降—抬升两种类型。区内沉积体系发育较为齐全,自下而上可以识别出滨海潮坪—沼泽、三角洲和河流等三大沉积体系;其中,三角洲和河流体系发育的分流河道、辫状河道砂岩分布范围广、厚度大,形成了该区最主要的砂体类型。区内砂岩储层在其间断埋藏成岩过程中,受表生淋滤作用和深部淋滤作用的影响,形成了较为发育的次生孔隙,孔隙度一般为15%～25%,大气水的深部淋滤作用又进一步改善了断层发育区的储集性能,并由此形成了该区优质的储层。综合评价认为,西部剥蚀带附近是最有利的勘探区带。     

光纤制备中的外汽相沉积工艺研究

人们对光纤生产过程中外汽相沉积(OVD)工艺的沉积机理的研究已经有好多年，但实际生产过程中，很多因素都会影响沉积速率和效率。为此我们通过试验，研究了决定沉积速率和沉积效率的主要因素，如预制棒表面温度、SiCl4流量和SiO2颗粒的温度等。     

Analytical characterization of cadmium cyanamide in CdS thin films and bulk precipitates produced from CBD process in pilot plant

CdS thin films and bulk precipitates were obtained by chemical bath deposition (CBD) in a well-closed reactor. X-ray diffraction spectroscopy, Fourier transform infrared spectroscopy, thermal analysis, elemental analysis and leaching have been used to characterize solids and thin films. It has been shown that the proportion of cadmium cyanamide in solids may vary from about 50% to 2% according to physicochemical conditions in solution (time after CBD, ammonia concentration) and that CdO results from CdCN₂ after air annealing of thin films. This last step also increases the crystallinity of the films.     

Influence of the deposition atmosphere on the characteristics of Pd–Mg thin films prepared by pulsed laser deposition

Bilayered palladium (30 nm thick)–magnesium (350 nm thick) thin films were prepared using the pulsed laser deposition technique in the presence of various background gases (Ar, He and a mixture He + H₂) under different partial pressures (47 and 27 Pa). According to the deposition atmosphere, the Pd/Mg interface shows either a sharp or an extended transition. The electrochemical hydriding properties and the mechanical stability upon cycling of the Pd/Mg film are greatly improved when an extended «intermixing» zone between the Pd and Mg layers is present. The Pd–Mg films prepared under pure helium fulfill these conditions.     

Signature analysis and defect detection in layered manufacturing of ceramic sensors and actuators

This paper presents the concept of a process signature for the use of online signature analysis and defect detection in the layered manufacturing (LM) of ceramic sensors and actuators. To achieve the high quality of parts built by the fused deposition of ceramics (FDC), an online process-monitoring system is implemented to detect the processing defects. Using a process signature extracted from the image of a layer captured by the monitoring system, an ideal image is created that is then compared to the original image to detect and identify the defects. Some results of signature analysis and defect detection for single-material and multi-material parts are also presented.Received: 22 July 1999, Accepted: 21 October 2001, Published online: 29 October 2003 Correspondence to: Mohsen A. JafariThis work was supported by the Office of Naval Research under grant # N-0014-96-1-1175. Ref. US Patent # S-5738817, April 14, 1998.     

电容比和方向性对自给能γ剂量计探头的影响

本文给出了自给能γ剂量计探头在γ射线照射下积累电荷的测量结果，讨论了电容比和方向性对自给能γ剂量计探头的影响以及探头的饱和点。     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

整体毡纤维体积分数对CVD增密的影响

将3组不同纤维体积分数的整体毡采用等温CVD进行沉积热解炭增密,结合CVD沉积过程中整体毡内气体传质数学模型,研究了整体毡的纤维体积分数对CVD增密过程的影响,研究结果表明:纤维体积低的整体毡沉积时增重率高;纤维体积分数高的整体毡容易获得较高密度的C/C复合材料;纤维体积分数超过35％的整体毡经过300 h的化学气相沉积,坯体的体积密度能达到1.52 g/cm~3。