Effect of polymerization conditions on o‐phenylenediamine and o‐phenetidine oxidative copolymers

A series of new o‐phenylenediamine (OPD)/o‐phenetidine (PHT) copolymers with partly phenazine‐like structures has been successfully synthesized at three polymerization temperatures by chemically oxidative polymerization in four different polymerization media. The molecular structures and properties of the resulting OPD/PHT polymers were investigated by IR, UV–vis and high‐resolution ¹H NMR spectroscopies, and DSC, in order to ascertain the effect of reaction temperature, comonomer ratio and acid medium. The copolymerization mechanism of OPD with PHT monomers has been proposed. It is found that the statistical OPD/PHT copolymer obtained at a temperature of 118 °C has a higher degree of polymerization than that obtained at 12–17 °C. The OPD content in the copolymers calculated from NMR spectroscopic analysis is higher than that in the feed OPD content, whereas the OPD content calculated from element analysis is slightly lower than the feed OPD content. It can be predicted that denitrogenation takes place in the OPD units during the polymerization process at OPD/PHT molar ratios of 90/10 and 100/0. These OPD/PHT copolymers exhibit a much better solubility than the OPD homopolymer, hence suggesting an incorporation of PHT units into the phenazine structure of the homopolymer. The thermal behavior of the copolymers was also studied. Copyright © 2004 Society of Chemical Industry     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

Yeast mutants with increased bacterial transposon Tn5 excision

Five complementing recessive mutations that exhibit increased bacterial transposon Tn5 precise excision in yeast Saccharomyces cerevisiae were obtained by ethylmethanesulfonate treatment. One of these mutations (tex1) was submitted to extensive genetic analysis. tex1 is a recessive temperature-sensitive mutation resulting in a 20-100-fold increase in Tn5 excision. It also has increased frequencies of ochre mutation reversion, of forward mutation to canavanine resistance, and loss of chromosome III or its right arm. The possible mechanism of tex1 effects is discussed.     

Superconductivity at differentTc in CdBa2Ca2Cu3Oy

A Cd analogue of the Tl and Hgn =3 series with nominal composition CdBa₂Ca₂Cu₃O_y has been synthesized. The samples were superconducting according to magnetic susceptibility measurements. The critical temperature was 103 or 107 K depending on the preparation conditions. The EDX analysis revealed the presence of Cd-1111, Cd-1121, and Cd-2333 as minor phases. The observed diamagnetic effects were attributed to the differentT _c of these phases.     

短纤维增强透气性莫来石/铁(A3S2/Fe)复合材料烧结特性的研究

本文研究了A₃S₂/Fe复合材料的烧结特性、透气性和纤维增强效果,分析了烧结过程中材料宏观结构和微观组织的形成机理.实验结果表明:纤维增强A₃S₂/Fe复合材料在900～1000℃具有良好的烧结性能,烧成后表层存在一定厚度的硬化层;纤维增强效果显着.材料抗压强度达17～23MPa,相对透气系数为4.30～9.69cm3/(cm2·s·atm).已能满足实际应用的需要.     

MX345芯片及单片机控制

MX345芯片用于产生模拟信令—CTCSS单音.本文在介绍MX345编码/解码器工作原理的基础上,设计出MX345芯片与单片机的接口电路.最后给出控制软件.     

Effect of temperature on methyl radical generation over Sr/La2O3 catalysts

The role of gas phase CH₃ radicals in the oxidative coupling of CH₄ over 1 wt% Sr/La₂O₃ is supported by the observations that (i) this is a very effective catalyst for the generation of CH₃ · radicals and (ii) the concentration of CH₃ · radicals increases with temperature over the range of 450 °C–800 °C.     

迁安精矿粉高碱度烧结矿试验研究

对迁安地区磁选精矿粉添加磷石粉和Ｂ２Ｏ３，生产二元碱率为２．０左右的高碱度烧结矿，在实验室和现场进行了试验。结果表明：加入少量磷灰石粉或硼即可完全抑制烧结矿冷却过程中的自然粉化现象；ＭｇＯ含量对烧结矿质量影响明显；烧结矿的冶金性能良好。     

A new voltage control equipment using fuzzy inference

Power system control equipment needs higher sensitivity and operational reliability. Advanced voltage control equipment is needed for reducing the frequency of tap changes and improving the characteristics (the relationship between the actual voltage and reference voltage) of the voltage to meet today's power system requirements. However, these objectives are in a trade-off relationship. Studies of voltage control derived from a knowledge base suitable for electric power systems can satisfy these objectives using fuzzy inference. Compared with corresponding conventional equipment, the new equipment improved the deviation of 30 min average voltage of 30 percent. This paper describes the design concept of new voltage control equipment using fuzzy inference. In addition, field test results are described along with rules of fuzzy inference, membership functions, and the deviation of 30 min average voltage through detailed simulation.     

模块化蓝光光存储性能静态测试系统

蓝光光存储是信息存储领域发展的一个重要方向。测试系统是研究蓝光光存储材料的必备条件，为建立蓝光光存储研究平台，设计和搭建了一套模块化蓝光光存储性能静态测试系统。激光工作波长为406．7nm。系统采用调制解调技术降低系统噪声，提高测量粘度：采用光点移动模式降低对样品尺寸的要求；采用纳米平台提高记录点的反复定位性能。实验结果证明测试系统性能良好，可以满足蓝光光存储性能静态测试要求。