Stacking number dependence of size distribution of vertically stacked InAs/GaAs quantum dots

Vertically stacked layer structure is useful for controlling the size distribution of quantum dots. The dependence of the size distribution of quantum dots on the stacking numbers is theoretically and experimentally investigated. We show that the size distribution of quantum dots decreases with increasing the stacking number, and it occurs drastically when the stacking number is changed from 1 to 2. The quantitative analysis on in-plane strain energy distribution is also performed for the explanation.     

Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

We have investigated electron emission from self-assembled In_0.5Ga_0.5As/GaAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detailed deep level transient spectroscopy comparisons between the QD sample and a reference sample, we determine that trap D, with an activation energy of 100 meV and an apparent capture cross section of 5.4×10⁻¹⁸ cm², is associated with an electron quantum level in the In_0.5Ga_0.5As/GaAs QDs. The other deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by MBE.     

Bulky rigid substitutions: A route to high electron mobility and high solid-state luminescence efficiency of perylene diimide

In this paper, we report that a kind of perylene diimide derivative with bulky rigid substituents, 1,7-bis(p-tert-butylphenoxy)-N,N′-dicyclohexyl-perylene-3,4,9,10-tetracarboxylic diimide (TBPCHPDI) possesses both high electron mobility (1.8 cm² V⁻¹s⁻¹) and high fluorescence quantum yield (0.32) in the solid state. Through X-ray diffraction (XRD), UV–Vis absorption and fluorescence spectra, and differential scanning calorimetry (DSC) measurements, it is demonstrated that the above phenomenon can be ascribed to the unique crystal structure of TBPCHPDI: due to steric hindrance of bulky rigid substituents, the intermolecular π–π actions are neglectable, providing high luminescence efficiency; in the mean time, the spacing between perylene chromophores is still very short (3.47 Å), which is favorable for the hopping transportation of charge carrier from one molecule to neighboring molecule. Therefore, our finding would help design and synthesize novel organic semiconductive materials with potential applications in electrically pumped lasers which require high emission efficiency when large current density is applied.     

InAlA5量子点材料的AFM和拉曼散射研究

对分子束外延（MBE）自组织生长的InAlAs量子点材料进行了拉曼散射实验。结合原子力显微镜（AnD对量子点形貌观察的结果,分析了InAlAs量子点生长过程中尺寸、密度和均匀性的改变,并研究了三维岛的结构对拉曼谱线的影响。对InAlAs淀积厚度不同样品的拉曼谱分析表明,岛状结构的尺寸横纵比与类GaAsLO模和类AlAs LO模的半高全宽有密切关系。不同偏振下的拉曼实验证实了该结构中的光学声子在Z（X,X）Z偏振条件下为非拉曼活性。     

CdSe/ZnS量子点光纤纤芯基底的研究

量子点光纤正逐渐成为光通信领域的研究热点。首先介绍了CdSe/ZnS量子点掺杂光纤的发展历史,随后给出两种不同纤芯基底材料的CdSe/ZnS量子点掺杂光纤的制备方法,并对它们的光谱特性及发射峰值增益进行了分析比较,最后分析得出适合CdSe/ZnS量子点掺杂光纤的纤芯基底材料。CdSe/ZnS量子点掺杂光纤基底材料的研究对其他量子点光纤的研制具有一定的借鉴作用。     

Indirect Control of Donor/Acceptor Interactions for Highly Efficient Space-Confined Thermally Activated Delayed Fluorescence Emitters

Conformational engineering is essential to further reinforce the luminescent properties of thermally activated delayed fluorescence (TADF) materials featuring through-space charge transfer (TSCT) characteristics. Herein, two TSCT-TADF emitters (8MeDM-B and 8FDM-B) with the methyl and fluorine moieties substituted at the C8 site of the rigid spiro-fluorene bridge is reported. Derivation of the C8 site is first proposed to control the molecular configuration with the ability to indirectly tune the intramolecular interaction between donor and acceptor groups. As a result, 8MeDM-B and 8FDM-B both present small singlet-triplet energy gaps, fast reverse intersystem crossing rates, and high photoluminescence quantum yields. Interestingly, the smaller fluorine atom not the bigger methyl group exhibits more evident electrostatic repulsive force onto the central donor and thus rectifies the central spiro structure. Consequently, the high external quantum efficiency values of 28.8% and 31.7% for 8MeDM-B and 8FDM-B-based electroluminescence devices are achieved, respectively. This study offers a measure for enhancing TSCT-TADF emitters without directly modifying the donor or acceptor.     

一个抗量子密钥交换协议及其对应的加密方案(英文)

The emergence of quantum computer will threaten the security of existing public-key cryptosystems,including the Diffie Hellman key exchange protocol,encryption scheme and etc,and it makes the study of resistant quantum cryptography very urgent.This motivate us to design a new key exchange protocol and encryption scheme in this paper.Firstly,some acknowledged mathematical problems was introduced,such as ergodic matrix problem and tensor decomposition problem,the two problems have been proved to NPC hard.From the computational complexity prospective,NPC problems have been considered that there is no polynomial-time quantum algorithm to solve them.From the algebraic structures prospective,non-commutative cryptography has been considered to resist quantum.The matrix and tensor operator we adopted also satisfied with this non-commutative algebraic structures,so they can be used as candidate problems for resisting quantum from perspective of computational complexity theory and algebraic structures.Secondly,a new problem was constructed based on the introduced problems in this paper,then a key exchange protocol and a public key encryption scheme were proposed based on it.Finally the security analysis,efficiency,recommended parameters,performance evaluation and etc.were also been given.The two schemes has the following characteristics,provable security,security bits can be scalable,to achieve high efficiency,quantum resistance,and etc.     

基于观测器的混沌投影同步

研究一种基于状态观测器的混沌投影同步,得到驱动系统和响应系统对应变量成比例.该设计方案从系统稳定性出发,通过极点配置和设计驱动系统的状态观测器,得到控制器,实现了一类离散混沌系统的投影同步.在混沌控制过程,改变奴役系统的控制器使比例因子增大或减小.因此,根据需要可以任意改变比例因子,实现相空间自由地拉伸和收缩,这一特性在保密通信方面有一定的应用前景.通过对Henon混沌系统和超混沌广义Henon映射的数值仿真,表明理论分析的正确性.     

类W-势阱与应变超晶格量子阱的带间跃迁

假设量子阱是类W-势阱,应变效应表现为势阱底部出现了类抛物线鼓包。在量子力学框架下,讨论了应变效应对输出波长的影响。结果表明,在应变作用下,量子阱出现了能级分裂,正是这种分裂为高性能量子阱光学器件的研制提供了更大的设计空间,为量子阱激光器件输出波长的调节提供了理论基础。     

基于量子计算的僵尸网络周期性通信行为检测算法

僵尸网络需要在控制者和受控主机之间维持周期性通信,如果能够有效识别僵尸网络的周期性通信行为,就能够以此为基础实现僵尸网络检测。尽管一些算法提出了基于周期性通信行为的僵尸网络检测方法,但是如何在海量数据中实现僵尸网络的快速检测仍然是一个问题。基于量子计算的僵尸网络周期性通信行为检测算法,是在已有算法的基础上引入量子计算来提高周期性通信检测算法的速度。实验结果表明,改进后的算法与已有算法相比,拥有相同的检测精度,与此同时,能够使用较少的查询次数完成僵尸网络检测,能够有效提高僵尸网络检测的速度。