高斯光束传输理论在半导体激光器耦合中的应用

在TO封装激光器生产过程中,激光器和光纤在耦合时耦合功率与耦合位置呈现一定的关系。针对该过程中出现的这一现现象。利用高斯传输定理、模匹配原理和矩阵光学的理论加以分析和解释,得到对TO封装激光器的设计和生产具有指导意义的结论。     

Intermetallic reactions in reflowed and aged Sn-9Zn solder ball grid array packages with Au/Ni/Cu and Ag/Cu pads

During the reflowing of Sn-9Zn solder ball grid array (BGA) packages with Au/Ni/Cu and Ag/Cu pads, the surface-finished Au and Ag film dissolved rapidly and reacted with the Sn-9Zn solder to form a γ₃-AuZn₄/γ-Au₇Zn₁₈ intermetallic double layer and ε-AgZn₆ intermetallic scallops, respectively. The growth of γ₃-AuZn₄ is prompted by further aging at 100°C through the reaction of γ-Au₇Zn₁₈ with the Zn atoms dissolved from the Zn-rich precipitates embedded in the β-Sn matrix of Sn-9Zn solder BGA with Au/Ni/Cu pads. No intermetallic compounds can be observed at the solder/pad interface of the Sn-9Zn BGA specimens aged at 100°C. However, after aging at 150°C, a Ni₄Zn₂₁ intermetallic layer is formed at the interface between Sn-9Zn solder and Ni/Cu pads. Aging the immersion Ag packages at 100°C and 150°C caused a γ-Cu₅Zn₈ intermetallic layer to appear between ε-AgZn₆ intermetallics and the Cu pad. The scallop-shaped ε-AgZn₆ intermetallics were found to detach from the γ-Cu₅Zn₈ layer and float into the solder ball. Accompanied with the intermetallic reactions during the aging process of reflowed Sn-9Zn solder BGA packages with Au/Ni/Cu and Ag/Cu pads, their ball shear strengths degrade from 8.6 N and 4.8 N to about 7.2 N and 2.9 N, respectively.     

封装技术评述

评述了当前封装技术的特点以及应用,介绍了多芯片组件、突点互连技术、球栅阵列、板上芯片、板上倒装芯片和柔性电路板上芯片技术以及片上引线与引线上芯片技术。     

基于改进DeepLabV3+的铣床碎屑图像分割方法

针对铣床碎屑形状不规则导致图像分割中碎屑轮廓不清晰、分割精度低的问题,本文提出一种改进的DeepLabV3+铣床碎屑分割算法。首先在DeepLabV3+的Xcepetion模块中嵌入通道与空间注意力机制(convolutional block attention module, CBAM)模型,优化通道的权重和位置信息,加强碎屑图像区域的特征学习;其次将DeepLabV3+的空洞空间卷积池化金字塔(atrous spatial pyramid pooling, ASPP)模块改为密集连接(dense conolutional network, DenseNet)方式,增大碎屑图像特征点的感受野,提升铣床碎屑图像特征的复用效率;最后在解码过程中采用多尺度自适应特征融合方法,聚合多尺度特征作为解码器的输入特征,提高碎屑图像分割的精度与鲁棒性。实验结果表明,本文算法优于其他分割算法,改进后算法相比DeepLabV3+,像素准确率提高0.026,平均交并比(mean intersection over union,MIOU)提高0.020,F₁值提高了0.013。     

铝/镍/铜UBM厚度对SnAgCu焊点的力学性能及形貌影响

研究了倒装芯片中UBM制备和焊球回流工艺流程。通过改变阻挡层Ni和浸润层Cu的厚度,结合推拉力测试实验,探究了SnAgCu焊点剪切强度的变化规律。研究结果表明,UBM中阻挡层Ni对SnAgCu焊点的力学性能影响最大,而浸润层Cu厚度的增加也能提高SnAgCu焊点的力学性能。进一步对推拉力实验后的焊点形貌进行了SEM观察和EDS分析,得到了焊盘剥离、脆性断裂、焊球剥离、韧性断裂四种不同的焊点失效形式,代表着不同的回流质量,而回流质量主要由UBM的成分和厚度决定。研究结果为倒装焊工艺的优化提供了理论指导。     

Intermetallic reactions in a Sn-20In-2.8Ag solder ball-grid-array package with Au/Ni/Cu pads

The intermetallic compounds formed during the reflow and aging of Sn-20In-2.8Ag ball-grid-array (BGA) packages are investigated. After reflow, a large number of cubic-shaped AuIn₂ intermetallics accompanied by Ag₂In precipitates appear in the solder matrix, while a Ni(Sn_0.72Ni_0.28)₂ intermetallic layer is formed at the solder/pad interface. With further aging at 100°C, many voids can be observed in the solder matrix and at the solder/pad interface. The continuous distribution of voids at the interface of specimens after prolonged aging at 100°C causes their bonding strength to decrease from 5.03 N (as reflowed) to about 3.50 N. Aging at 150°C induces many column-shaped (Cu_0.74Ni_0.26)₆(Sn_0.92In_0.08)₅ intermetallic compounds to grow rapidly and expand from the solder/pad interface into the solder matrix. The high microhardness of these intermetallic columns causes the bonding strength of the Sn-20In-2.8Ag BGA solder joints to increase to 5.68 N after aging at 150°C for 500 h.     

塑封集成电路失效分析和对策

文章主要对集成电路失效问题进行了分析和阐述。列举出容易引起集成电路失效的裂纹、弹坑的主要原因。一是压焊劈刀选型不当, 生产过程中造成芯片表面沾污, 选用压焊参数不当等都容易引起弹坑。二是存储环境恶劣导致成品电路吸潮, 环氧塑封料的耐热性、耐腐蚀性、热膨胀系数、电气特性、耐湿性以及结合力在生产制造各环节引起集成电路裂纹的产生, 从而最终导致产品失效。最后提出了预防减少产品裂纹、弹坑引起集成电路失效的方法和对策。     

均匀液滴喷射成球法的射流速度计算

分别通过流体力学计算、数值模拟及实验方法研究在不同压力作用下生产电子封装用锡球时不同喷嘴的射流速度。对比分析表明,理论计算和模拟与实验结果基本相符;理论计算方法较方便、准确计算出射流出口的平均速度,数值模拟方法不但可求得平均速度,而且可得到射流断面的速度分布。保持喷嘴直径不变,射流速度随压力增加而呈抛物线形增加。在相同压力作用下,射流速度随喷嘴直径增加而稍有增加,随过渡段直径增加而减小,并且压力差越大增加值或减小值也越大。     

Ni含量对Nd_2Fe_(17)磁粉吸波性能的影响

采用高能球磨和微氧化气氛热处理制备了Nd2(Fe1–xNix)17(x=0,0.05,0.15,0.50)吸波粉体,研究了Ni的含量对NdFeNi粉体的相组成和吸波性能的影响。结果表明:当x=0,0.05,0.15和0.50时,样品的组成相均是Nd2Fe17、α-Fe和Nd2O3相。NdFe样品对电磁波的损耗以介电损耗为主;NdFeNi样品对电磁波的损耗以磁损耗为主。随着Ni含量的增加,样品对微波的吸收峰逐渐向低频移动,且其反射率逐渐升高。     

适合大样本快速训练的最大夹角间隔核心集向量机

许多核化形式的分类方法如SVM,SVDD等都是对应一个二次规划(QP)问题,而核矩阵计算需要0(m2)空间复杂度,求解QP需要0(m3)时间复杂度,限制了这类方法对大样本数据的训练.本文基于一种新的分类间隔概念提出最大向量夹角间隔分类器MAMC,目标是在样本空间找到最优向量c,测试样本通过c与训练样本之间的最大化向量夹...