Contact Force Distribution and Static Load-carrying Capacity of Large Size Double Row Four-point Contact Ball Bearing

Clearance not only affects the startup torque, rotation precision and stiffness of bearing, but also affects the load distribution, load-carrying capacity and life of bearing. A computational model in which the clearance of bearing is that included is presented for detennining the contact force distribusion and stric load-carrying capacity of a double row four-point contact ball bearing which is subjected to the combined radial, axial and overturning moment loadings. The relation between the negative axial clearance and the contact force distribution is analyzed. The static load-canying capacity curvesthe established, and the effects of the changes in negative axial clearance, curvatthe radius coefficient of raceway groove and initial contact angle on the static load-carrying capacityse analyzed. The results show that, with the increase in the absolute value of negative clearance, the maximurn contact load decreases first and then increases. The clearance values in the range of -0.2 mm-0 mm have life effect on the static load-carrying capacity of bearing. With the increase in the curvature radius coefficient of raceway groove and the decrease in the initial contact angle, the static load capacity of bearing decreases.     

薄壁管滚珠旋压力计算模型

给出了一种计算三维滚珠旋压力的解析模型。根据滚珠轨迹对空间坐标进行旋转,简化了滚珠与工件的空间关系表达式;基于空间解析几何理论和旋压件为半无限体的假设,得到了滚珠与管坯的接触边界方程,并在各坐标平面上进行投影得到二维曲线,通过对曲线的积分计算各坐标平面内的接触区投影面积。变形区单位压力通过钢球压入空间半无限体时成形区的平均压力近似相等的假设给出,计算各旋压力分量和总旋压力;通过对旋压力轴向分量的理论计算结果与实验数据对比,表明给出了一种计算三维滚珠旋压力的解析模型。根据滚珠轨迹对空间坐标进行旋转,简化了滚珠与工件的空间关系表达式;基于空间解析几何理论和旋压件为半无限体的假设,得到了滚珠与管坯的接触边界方程,并在各坐标平面上进行投影得到二维曲线,通过对曲线的积分计算各坐标平面内的接触区投影面积。变形区单位压力通过钢球压入空间半无限体时成形区的平均压力近似相等的假设给出,计算各旋压力分量和总旋压力;通过对旋压力轴向分量的理论计算结果与实验数据对比,表明给出的计算模型的准确性。     

双列角接触球轴承动刚度特性分析

为研究双列角接触球轴承动刚度特性,在双列角接触球轴承动力学分析基础上,建立双列角接触球轴承动刚度仿真分析模型。采用精细积分法和预估-校正Adams-Bashforth-Moulton多步法相结合的算法对双列角接触球轴承动刚度模型进行求解,分析轴承结构参数和工况参数对轴承动刚度的影响。分析结果表明：沟曲率半径系数对轴承动刚度影响较小,随着内、外沟曲率半径系数的增加,径向刚度略有增大,轴向刚度和角刚度相对减小;增加钢球数有利于提高轴承动刚度;轴向预紧量较大时轴承动刚度较高,但过大的轴向预紧会使轴承寿命降低,应合理确定轴向预紧量;随转速的增大,轴承动刚度先减小后增大,且转速较低时可近似以接触刚度代替轴承动刚度,转速较高时应综合接触刚度和油膜刚度求得轴承动刚度;外载荷对轴承动刚度有较大影响,加大径向载荷和轴向载荷有利于提高轴承动刚度,随着力矩载荷的增大,轴承动刚度变化较为复杂,但整体上,呈现先减小后增大的趋势。     

Cu丝超声球焊及楔焊焊点可靠性及失效机理研究

Cu丝由于具有优良的导热性能、机械性能以及低成本等优点使得用铜丝替代传统的Au丝和Al丝已经成为半导体工艺发展的必然方向.综述了Cu丝超声球焊以及楔焊焊点可靠性问题,对焊点的各种失效模式与机理进行探讨.     

硬质合金激光铣削加工试验研究

采用不同的激光铣削工艺对硬质合金进行激光铣削试验研究。分析了工艺参数对铣削量和铣削质量的影响,并利用优化或复合的工艺对硬质合金试样进行多样激光铣削。     

变频器在龙门铣床上的应用

介绍龙门铣床的直流调速控制系统的改造方案，根据龙门铣床工作台运动过程及原直流电机的容量来选择交流电机和变频器并对变频器的功能进行设定。     

Effects of microstructural evolution and intermetallic layer growth on shear strength of ball-grid-array Sn-Cu solder joints

The shear strength of ball-grid-array (BGA) solder joints on Cu bond pads was studied for Sn-Cu solder containing 0, 1.5, and 2.5 wt.% Cu, focusing on the effect of the microstructural changes of the bulk solder and the growth of intermetallic (IMC) layers during soldering at 270°C and aging at 150°C. The Cu additions in Sn solder enhanced both the IMC layer growth and the solder/IMC interface roughness during soldering but had insignificant effects during aging. Rapid Cu dissolution from the pad during reflow soldering resulted in a fine dispersion of Cu₆Sn₅ particles throughout the bulk solder in as-soldered joints even for the case of pure Sn solder, giving rise to a precipitation hardening of the bulk solder. The increased strength of the bulk solder caused the fracture mode of as-soldered joints to shift from the bulk solder to the solder/IMC layer as the IMC layer grew over a critical thickness about 1.2 m for all solders. The bulk solder strength decreased rapidly as the fine Cu₆Sn₅ precipitates coarsened during aging. As a consequence, regardless of the IMC layer thickness and the Cu content of the solders, the shear strength of BGA solder joints degraded significantly after 1 day of aging at 150°C and the shear fracture of aged joints occurred in the bulk solder. This suggests that small additions of Cu in Sn-based solders have an insignificant effect on the shear strength of BGA solderjoints, especially during system use at high temperatures.     

Aging study on interfacial microstructure and solder-ball shear strength of a wafer-level chip-size package with Au/Ni metallization on a Cu pad

Eutectic solder balls (63Sn-37Pb) joined to Cu pads with an Au/Ni metallization have been widely used in wafer-level chip-size package (WLCSP) technology for providing electrical and mechanical interconnections between components. However, some reliability issues must be addressed regarding the intermetallic compounds (IMCs). The formation of a brittle IMC layer between the solder/Cu pad interface impacts considerably upon the solder-ball shear strength. In addition, it will degrade the long-term operating reliability of the WLCSP. This study investigates, by means of experiments, the growth of the IMC layer under isothermal aging for the eutectic Sn-Pb solder reflowed on a Cu pad with an Au/Ni metallization. Forming the Cu pad with an Au/Ni metallization was achieved by a simple semiconductor-manufacturing process. The effects of the intermetallic layer on solder-ball shear strength were examined for various parameters, including the thickness of the Au layer, solder-ball size, and the diameter of the Cu pad. Experimental results indicate that two IMC layers, Au_0.5Ni_0.5Sn₄ and Ni₃Sn₄, form at the solder/Cu pad interface after aging. The Au_0.5Ni_0.5Sn₄ intermetallic layer dominates the total thickness of the IMC layer and grows with aging time while the solder-ball shear strength decreases after aging. The degradation of the solder-ball shear strength was found to be caused mainly by the formation of the Au_0.5Ni_0.5Sn₄ layer. The experimental results established that a thinner Au layer on Cu pad can effectively control the degradation of solder-ball shear strength, and this is especially true for smaller ball sizes.     

Phase transformations in thermally exposed Au-Al ball bonds

Gold-aluminum ball bonds were thermally exposed at constant elevated temperatures, and the resultant phase transformations studied in detail. The as-bonded microstructure of a Au-Al ball bond essentially consisted of a reaction zone (termed “alloyed zone” (AZ) in the as-bonded condition) between the Au bump and the bonded Al metallization. It is the growth of the reaction zone between the Au bump and the bonded Al metallization and also the nonbonded Al metallization during thermal exposure that gave rise to the various phase transformations. Au₄Al, Au₈Al₃, and Au₂Al are the predominant phases that grew across the ball bond until the bonded Al metallization is available to take part in the interdiffusion reactions. After the complete consumption of the bonded Al metallization, the Au-Al phases reverse transformed resulting in the formation of the Au₄Al phase in the entire reaction zone across the ball bond (RZ-A). The lateral interdiffusion reactions resulted in the nucleation and the growth of all of the Au-Al phases given by the phase diagram. Kidson’s analysis and Tu et al.’s treatment were extended to a five-phase binary system to explain the phase transformations in thermally exposed Au-Al ball bonds. It is possible for all of the Au-Al phases to grow across a ball bond uninhibited as long as the bonded metallization is available. However, the supply limitation of the bonded metallization gives rise to reverse transformations where Al-rich phases transform to Au-rich phases and eventually result in the formation of the Au₄Al phase in the entire RZ-A. If infinite time is allowed, Au₄Al would dissolve; the extent of which is dependent on the solubility of Al in Au. No supply of Au lateral to the bond causes the reverse transformation of the Au₄Al phase, giving rise to the lateral growth of the remaining Au-Al phases. If infinite time is allowed, the lateral phase transformations would result in the formation of a phase that is dependant on the relative proportion of Au and Al present in the nonbonded metallization (NBM) and Au₄Al below the void line. Hence, the presence of a phase in a particular location of a ball bond is dependent on the time and temperature of thermal exposure.