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101.
于明 《电子测试》2016,(13):9-12
本项目是基于美国TI公司TMS320F28xx系列DSP,进行的测试方法研究与实现。测试方法用于北京自动测试技术研究所自主研发的国产自测试设备(ATE)BC3192V50大规模集成电路测试系统。测试的原理是,通过TMS320F28xx系列DSP配备的SCI(Serial Communication Interface)串行通信接口,以此作为桥梁完成ATE与芯片之间的通信。同时,实现自动测试设备与测试系统的测试向量的匹配。而后,完成TMS320F28xx系列DSP的功能测试以及直流参数测试。  相似文献   
102.
The power conversion efficiency of solar cells can be optimized via an efficient charge collection by electrodes. In this study, a simple linear polyethylenimine (LPEI), which is an insulating polymer, was adopted as the cathode interfacial layer of poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C61-butyric acid methyl ester (PCBM)-based bulk-heterojunction organic solar cells (OSCs) with a non-inverted configuration. All photovoltaic parameters of the OSCs were significantly enhanced by depositing LPEI onto the oxygen plasma-treated P3HT:PCBM active layers. The causes of performance enhancement in OSCs were studied. Results revealed that the microstructure and morphology of the P3HT:PCBM layer were almost unaffected by the oxygen plasma treatment and the subsequent LPEI deposition. The X-ray photoelectron spectra of the specimens demonstrated that with the aid of oxygen plasma treatment, the linked LPEI molecules formed a well-aligned dipole layer on top of the P3HT:PCBM layer through the bonding of nitrogen (N) with oxygen (O). The results from quantum chemical calculations showed that the LPEI molecule with an N–O bond had a larger dipole moment at an appropriate direction than that without an N–O bond. By contrast, the LPEI molecules can form a dipole layer with a random orientation in the absence of N–O bonds. The conductive atomic force microscopy images of the specimens showed that the well-aligned dipole layer could facilitate electron transfer and could block hole transfer from the P3HT:PCBM to the cathodes. The well-aligned and augmented interface dipoles improved the charge selectivity at the cathodes and the photovoltaic performance of the devices.  相似文献   
103.
FPGA实现的电子内窥镜与计算机接口   总被引:1,自引:0,他引:1  
介绍了一种新型的可编程逻辑器件FPGA及其开发工具MAX+PLUSⅡ,并使用FLEX10K30开发了电子内窥镜系统与计算机ISA总线的接口系统,并说明系统的结构和工作原理。  相似文献   
104.
The paper presents the results of capacitance-voltage, conductance-frequency and current-voltage characterization in the wide temperature range (140-300 K) as well as results of low temperature (5-20 K) thermally stimulated currents (TSC) measurements of metal-oxide-semiconductor (MOS) structures with a high-κ LaSiOx dielectric deposited on p- and n-type Si(1 0 0) substrate. Interface states (Dit) distribution determined by several techniques show consistent result and demonstrates the adequacy of techniques used. Typical maxima of interface states density were found as 4.6 × 1011 eV−1cm−2 at 0.2 eV and 7.9 × 1011 eV−1cm−2 at 0.77 eV from the silicon valence band. The result of admittance spectroscopy showed the presence of local states in bandgap with activation energy Ea = 0.38 eV from silicon conductance band, which is in accord with interface states profile acquired by conductance method. Low-temperature TSC spectra show the presence of shallow traps at the interface with activation energies ranging from 15 to 32 meV. The charge carrier transport through the dielectric film was found to occur via Poole-Frenkel mechanism at forward bias.  相似文献   
105.
带FPGA的PCI接口应用   总被引:1,自引:1,他引:1  
文章介绍了一种带FPGA的PCI接口的应用及设计方法。该方法将PCI接口和PCI用户逻辑集成在一片FPGA里,可以对整个逻辑进行仿真测试,大大缩短了开发周期,提高了系统集成度和性能。文章重点叙述了Quicklogic公司提供的32wug TARGET接口芯片QL5030的原理和结构,分析了时序设计要点,给出了典型应用的逻辑框图和注意事项。  相似文献   
106.
The temperature dependence of capacitance-voltage (C-V) and the conductance-voltage (G/w-V) characteristics of (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures were investigated by considering the effect of series resistance (Rs) and interface states Nss in a wide temperature range (79-395 K). Our experimental results show that both Rs and Nss were found to be strongly functional with temperature and bias voltage. Therefore, they affect the (C-V) and (G/w-V) characteristics. The values of capacitance give two peaks at high temperatures, and a crossing at a certain bias voltage point (∼3.5 V). The first capacitance peaks are located in the forward bias region (∼0.1 V) at a low temperature. However, from 295 K the second capacitance peaks appear and then shift towards the reverse bias region that is located at ∼−4.5 V with increasing temperature. Such behavior, as demonstrated by these anomalous peaks, can be attributed to the thermal restructuring and reordering of the interface states. The capacitance (Cm) and conductance (G/w-V) values that were measured under both reverse and forward bias were corrected for the effect of series resistance in order to obtain the real diode capacitance and conductance. The density of Nss, depending on the temperature, was determined from the (C-V) and (G/w-V) data using the Hill-Coleman Method.  相似文献   
107.
Thermally grown oxide on 4H-SiC has been post-annealed in diluted N2O (10% N2O in N2) at different temperatures from 900 to 1100 °C. The quality of the nitrided oxide and the SiO2/4H-SiC interface was investigated by AC conductance and high frequency C-V measurements based on Al/SiO2/4H-SiC metal-insulator-semiconductor (MOS) structure. It is found that N2O annealing at 1000 °C produces the lowest interface state density, though the difference is not so significant when compared to the other samples annealed at 900 and 1100 °C. These results can be explained by the high temperature dynamic decomposition process of N2O. By fitting the AC conductance data, it is found that higher temperature nitridation increases the capture cross-section of the interface traps.  相似文献   
108.
Alloy anodes composed of microsized particles receive increasing attention recently, which outperform the nanostructured counterparts in both the manufacturing cost and volumetric energy density. However, the pulverization of particles and fracture of solid electrolyte interphase (SEI) during cycling brings about fast capacity degradation. Herein, it is shown how normally considered fragile SEI can become highly elastic through electrolyte chemistry regulation. Compared to the SEI constructed in classic carbonate electrolyte, the atomic force microscopy tests reveal that the one built in ether-based electrolyte doubles the maximum elastic strain to accommodate the repeated swelling-contracting. Such an SEI effectively encapsulates the microsized Sb anodes to prevent the capacity loss from particle isolation. Coupled with an intercalation-assisted alloying reaction mechanism, a sustained capacity of ≈573 mAh g−1 after 180 cycles at 0.1 A g−1 with outstanding initial Coulombic efficiency is obtained, which is among the highest values achieved in K-ion batteries. This study emphasizes the significance of building robust SEI, which offers the opportunity to enable stable microsized alloy anodes.  相似文献   
109.
Ternary layered oxide materials have attracted extensive attention as a promising cathode candidate for high‐energy‐density lithium‐ion batteries. However, the undesirable electrochemical degradation at the electrode–electrolyte interface definitively shortens the battery service life. An effective and viable approach is proposed for improving the cycling stability of the LiNi1/3Co1/3Mn1/3O2 cathode using lithium difluorophosphate (LiPO2F2) paired with fuoroethylene carbonate (FEC) as co‐additives into conventional electrolytes. It is found that the co‐additives can greatly reduce the interface charge transfer impedance and significantly extend the life span of LiNi1/3Co1/3Mn1/3O2//Li (NMC//Li) batteries. The developed cathode demonstrates exceptional capacity retention of 88.7% and remains structural integrity at a high current of 5C after 500 cycles. Fundamental mechanism study indicates a dense, stable fluorinated organic–inorganic hybrid cathode‐electrolyte interphase (CEI) film derived from LiPO2F2 in conjunction with FEC additives on the surface of NMC cathode material, which significantly suppresses the decomposition of electrolyte and mitigates the dissolution of transition metal ions. The interfacial engineering of the electrode materials stabilized by the additives manipulation provides valuable guidance for the development of advanced cathode materials.  相似文献   
110.
In this paper, the Geometric Optics (GO) method using the approximate ray paths coupled with the Computer Aided Tri-dimensional Interface Application (CATIA) meshing modeling are implemented to analyze the performance of electric large three-dimensional dielectric radome-enclosed antenna of arbitrary contour shape. The surfaces of the radome are approximated by planar triangular patches, the influences of various number of patches on power transmission coefficient and Insertion Phase Delay (IPD) via an ogive and a conical radome are discussed by the hybrid method. The simulation results indicate that computational error from planar triangular patches can limit in one percent, meeting the engineering application requirements.  相似文献   
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