大功率半导体激光器的腔面钝化

大功率半导体激光器的腔面退化是影响其寿命和可靠性的重要因素,长期以来一直是人们关注和研究的重点。本文利用离子铣结合腔面钝化还原层的方法对大功率半导体激光器的腔面进行处理。结果显示,离子铣腔面钝化能够在一定程度上减少半导体激光器的功率退化,168h加速老化后退化幅度降低4.5%;同时该技术对老化过程中COD阈值降低有明显的抑制作用,可有效减少使用中的突然失效。结果表明,该技术能够改善半导体激光器的腔面特性,器件的可靠性和使用寿命可望得到提高。     

铁基SiN表面陶瓷的结构及耐酸性腐蚀行为

研究了铁基表面镀硅（～５０ｎｍ 厚）经氮离子束处理（能量为 ４０ｋｅ Ｖ,剂量分别为５×１０１６,１×１０１７,５×１０１７ｃｍ － ２）后的表面结构和在 １ Ｎ Ｈ２ Ｓ Ｏ４ 水溶液中的腐蚀行为。 Ｔ Ｅ Ｍ 证明,各试样表面均存在一完整的非晶层;电化学测量和失重实验表明,试样的失重量与浸泡时间满足幂函数规律;经表面处理过的试样,腐蚀电位提高了 ３０～４０ｍ Ｖ,腐蚀电流密度下降了 ４～６ 倍;耐腐蚀性随氮离子剂量的增大而不断提高。文章还结合腐蚀表面的粗糙度（分形维数）讨论了离子注入对表面结构和耐蚀性的影响。     

Ion sensitive field effect transistor modelling for multidomain simulation purposes

The proper design and simulation of modern electronic microsystems oriented towards environment monitoring requires accurate models of various ambient sensors. In particular, this paper presents a comprehensive model of an ion sensitive field effect transistor (ISFET). The model can be employed straightforwardly for simulations at device, circuit or system level.First, the model was validated with electrical measurements and simulations of real structures performed for different ion concentration and temperature values. Then, the ISFET sensor model was employed for mixed-signal simulations in VHDL-AMS, when the analysis of a microsystem consisting of the ISFET sensor and a sigma-delta analogue-to-digital converter was carried out. Additionally, the presence of other ions than hydrogen in the measured solution was also taken into account in the simulations.     

Self-Powered Nanofluidic Pressure Sensor with a Linear Transfer Mechanism

The transfer functions of the widely used pressure sensors do not exhibit the desired linearity, which limits their practicability in many fields, such as the Internet of Things and artificial intelligence. Herein, MXene/cellulose nanofiber composite membrane-based linear nanofluidic pressure sensors are demonstrated. The nanoscale gaps between MXene laminates restrict the movement of electrolyte and realize the selective transport of ions, based on which mechanical signals can be converted into electric energy for self-powering. In particular, the generated voltage and current are directly proportional to the applied pressure. The introduction of high-strength cellulose nanofibers not only expands the detection range of the sensor but also achieves continuous adjustment of the nano-gap between MXene laminates, which optimizes the sensitivity of the device. The feasibility of further optimization through the modulation of surface functional groups, electrolyte concentration, and device assembly method is proposed. This 2D nanofluid pressure sensor provides an important approach to manufacture portable and wearable electronic devices for applications in many fields.     

集成电路制造中的三束技术

集成电路制造工艺技术种类繁多,包括光刻、刻蚀、氧化、扩散、溅射、封装等。作为代表性的先进工艺技术是电子束、离子束和光子束加工技术,俗称三束技术。对三束技术做了介绍。     

10W QCW operation of a proton implanted GaAlAs diode laser array

We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array. The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum (FWHM) of less than 3°, and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.     

XPS对离子交换法光色玻璃中银的状态研究

本文介绍利用ｘ射线光电子能谱分析仪（ＸＰＳ），对玻璃表面银的存在状态进行研究，实验结果表明银以Ａｇ＾０、Ａｇ＾＋、Ａｇ＾＋＋三种状态存在，而Ａｇ＾＋的存在有利于玻璃光色性的提高。文中并提出了在工艺过程中应采用惰性或弱氧化性气氛。     

预非晶化硅中注入硼的异常扩散

预非晶化硅中,在非晶区和损伤区之间有一重损伤层存在,其边缘清楚,厚度约为20nm,包含有大量的扩展缺陷。它阻挡了尾部损伤区内簇团分解放出的硅间隙原子向非晶区扩散,大大削弱了非晶区内注入硼的异常扩散。选用条件适当的二次硅离子注入,使重损伤层加重加厚,从而完全阻止了非晶层内硼的异常扩散。本文在实验上为重损伤层阻止非晶区内硼异常扩散的模型提供证明。     

Hyperdoping of Si by ion implantation and pulsed laser melting

Ion implantation followed by pulsed laser melting is an extensively-studied method for hyperdoping Si with impurity concentrations that exceed the equilibrium solubility limit by orders of magnitude. In the last decade, hyperdoped Si has attracted renewed interest for its potential as an intermediate band material. In this review, we first examine the important experimental results on both solid and liquid phase crystal regrowth from early laser annealing studies. The highly non-equilibrium regrowth kinetics following pulsed laser melting and its implications for dopant incorporation processes are discussed. We then review recent work in hyperdoped Si for enhanced sub-band gap photoresponse and give a brief discussion on photodetector device performance.     

Nanostructures for chemical recognition using ISFET sensors

The application of Langmuir-Blodgett (LB)-fabricated nanostructures on Ion selective Field Effect Transistors (ISFET) is of great interest since it permits the combination of a micro-scale device with a nanoscale material. In this article, the optimization of a LB-monolayer for calcium and sodium detection is carried out by characterization with XPS and AFM techniques, followed by electrochemical characterisation onto ISFET sensors. Physico-chemical modifications of the surface and good cation complexation of the ionophores fixed in the monolayers were observed with XPS studies. AFM images showed the presence of a unhomogeneous layer all over the ISFET surface. The electrochemical response of those monolayers onto ISFETs demonstrated the feasibility of this technology for sensor membrane fabrication and it opens further studies for other kind of devices such as optochemical sensors.