溶液温度对电化学沉积氧化亚铜薄膜相成分和显微结构的影响

用电化学方法在不锈钢基体上沉积多晶Ｃｕ２Ｏ薄膜并用Ｘ射线衍射和扫描电进行了分析研究了溶液温度对薄膜相组成、晶粒尺寸和择优取向的影响，当溶液的ＰＨ＝９，温度低于５０℃时得到的是Ｃｕ２Ｏ／Ｃｕ复相薄膜，纯Ｃｕ２Ｏ薄膜可在溶液温度高于５０℃时获得，纯Ｃｕ２Ｏ薄膜具有（１００）择优取向，实验发现薄膜的晶粒尺寸随溶液温度的增加从０．１２μｍ增加到０．６５μｍ。     

喷雾沉积快速凝固技术的发展与展望

喷雾沉积是制取大体积快凝材料的一种新工艺。本文综述了它的产生和发展，概述了其基本原理和过程控制。对该领域今后的发展动向，提出了一些新看法。     

Chemical-mechanical polishing of SiO2 thin films studied by X-ray reflectivity

Specular X-ray reflectivity from SiO₂ thin films prepared on silicon substrates by plasma-enhanced chemical vapor deposition showed the films to have a characteristic width of the decay in density at the free surface of 17 Å, to be about three-quarters the density of -quartz, and to have an interfacial layer at the silicon interface that was of the order of 100 Å wide and less dense than the bulk of the film. After chemical-mechanical polishing the characteristic width of the decay in density at the free surface was reduced to 10 Å; furthermore, the near-surface region to a depth of 30 Å had a greater density than the as-deposited film. Off-specular reflectivity confirmed that the decrease in characteristic width at the free surface was due to reduced roughness upon polishing and also revealed that the lateral correlation length in the limit of long wavelengths was the same for both polished and unpolished samples. The compression of the near-surface region during polishing is believed to enhance the dissolution of SiO₂ into the slurry which is necessary to achieve smooth surfaces.     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

AlN 粉末制备的热力学分析和实验研究

对制备 AlN 的体系 AlCl_3-NH_3-N_2进行了热力学分析,确立了 AlN 粉末合成所需要的热力学条件.在700～1000℃下,利用无水 AlCl_3和 NH_3的化学气相淀积反应合成得到了高纯 AlN 超细粒子粉末,研究了反应温度、AlCl_3浓度和总流量等对 AlN 粉末理化性质的影响.实验确立了产物低温和高温热处理条件.     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

Effect of chloride ions on immersion plating of copper onto porous silicon from a methanol solution

The effect of chloride ions (Cl⁻) during the immersion plating of copper onto porous silicon (PS) from a methanol (MeOH) solution has been studied. The presence of Cl⁻ in the Cu²⁺ solution was found to slow down the rate of copper deposition, as confirmed by inductively coupled argon plasma emission spectroscopy and X-ray photoelectron spectroscopy measurements. The threshold concentration of Cl⁻ at which the deposition of copper is very severely diminished was found to be 0.1 M. The inhibition effect is discussed on the basis of the rest potential values of PS and polarization curve measurements. They revealed that the rest potential of PS upon dipping in these solutions appears to direct the metal deposition. Current density-potential curves show that at Cl⁻ concentrations higher than 0.1 M, the reduction of Cu ions proceeds in two steps; the reduction of Cu(II) to Cu(I) followed by the reduction of Cu(I) to Cu(0). This suggests that Cu(I) species in MeOH solution can be stable over a certain potential range and this stability of Cu(I) is responsible for the inhibition of metal deposition. Fourier transform infrared spectroscopy and scanning electron microscopy (SEM) were also performed to investigate the structural changes and characterizations of PS samples after the plating process.     

应用铟源的反应蒸发制备In2O3透明导电膜

本工作说明，在低压氧气氛中。应用铟源的反应蒸发很容易淀积高质量的Ｉｎ２Ｏ３透明导电膜．旦然没有使用锡杂质，但所得膜的性能可以和最好的掺锡的Ｉｎ２Ｏ３膜相比．膜电阻率达２～３×１０￣４Ω·ｃｍ，可见光透过率超过９０％，并且膜生长速率高达２１９／ｍｉｎ．文章对成膜过程作了分析，报道了膜的最佳淀积条件，对由于偏离最佳淀积参数而导致的异常膜的形成机制也进行了讨论．     

Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction

Journal of Electronic Materials - Low pressure chemical vapor deposition (LPCVD) of tungsten (W) by SiH4 reduction of WF6 on Si(100) surfaces was studied in a single-wafer, cold-wall reactor over a...     

Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition (MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate. The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure. The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms.