Long wavelength GRIN-SCH MQW lasers incorporating graded GaAlInAs confinement layers

We report the growth and characterisation of the first GaAllnAs based GRIN-SCH MQW lasers operating at 1.3 and 1.6μm. In these devices, GaAllnAs barriers and either GalnAs or GaAllnAs wells have been used for the 1.6 and 1.3μm lasers, respectively, together with true continuously graded composition GaAlInAs regions for the confinement layers. The excellent structural quality of the active and confinement regions and control of wavelength uniformity has been confirmed. Buried ridge lasers fabricated from the GRIN-SCH MQW wafers lased at 1.3 and 1.6μm with CW threshold currents of 65 and 30 mA, respectively.     

Carbon tetrachloride doped Al x Ga1−x As grown by metalorganic chemical vapor deposition

A dilute mixture of CCl₄ in H₂ has recently been shown to be a suitable carbon doping source for obtainingp-type GaAs grown by metalorganic chemical vapor deposition (MOCVD) with carbon acceptor concentrations in excess of 1 × 10¹⁹cm⁻³. To understand the effect of growth parameters on carbon incorporation in CCl₄ doped Al _x Ga_1−x As, carbon acceptor concentration was studied as a function of Al composition, growth temperature, growth rate, and CCl₄ flow rate using electrochemical capacitance-voltage profiling. The carbon incorporation as a function of Al composition, growth temperature and CCl₄ flow rate was also measured by secondary ion mass spectroscopy (SIMS). All layers were grown by low pressure MOCVD using TMGa and TMAl as column III precursors, and 100% AsH₃ as the column V source. Increased Al composition reduced the dependence of carbon concentration on the growth temperature. Reduced growth rate, which resulted in substantially decreased carbon acceptor concentrations in GaAs, had an insignificant effect on the carrier concentration of Al_0.4Ga_0.6As. A linear relationship between hole concentration and CC1₄ flow rate in Al_xGa_1−x As for 0.0 ≤x ≤ 0.8 was observed. These results are interpreted to indicate that adsorption and desorption of CCl _y (y ≤ 3) on the Al _x Ga_1-x As surface during crystal growth plays an important role in the carbon incorporation mechanism.     

1053 nm超辐射发光二极管量子阱的设计

对于给定波长的超辐射发光二极管,根据应变量子阱理论,研究了器件有源层组分与量子阱宽度的关系,并讨论了量子阱中In组分相对于不同波长的最小临界值.用MOCVD生长器件,实验结果与理论计算值吻合.     

Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD

By monitoring the cyclic behavior of surface photoabsorption (SPA) reflectance changes during the growth of GaAs at 650°C and with sufficient H₂ purging time between the supply of trimethylgallium and AsH₃, we have been able to achieve controlled growth of GaAs down to a monolayer. Our results show, as confirmed by photoluminescence (PL) measurements, the possibility of growing highly accurate quantum well heterostructures by metalorganic chemical vapor deposition at conventional growth temperatures. We also present our PL measurements on the InGaAs single quantum wells grown at this temperature by monitoring the SPA signal.     

The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters

We describe the metalorganic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500°C, and 200 Torr in a horizontal quartz reactor using TMIn, TESb, AsH₃, and PH₃. By changing the layer thickness and composition, we have prepared structures with low temperature (≤20K) photoluminescence wavelengths ranging from 3.2 to 4.4 μm. Excellent performance was observed for a SLS light emitting diode (LED) and both optically pumped and electrically injected SLS lasers. An optically pumped, double heterostructure laser emitted at 3.86 μm with a maximum operating temperature of 240K and a characteristic temperature of 33K. We have also made electrically injected lasers and LEDs utilizing a GaAsSb/InAs semi-metal injection scheme. The semi-metal injected, broadband LED emitted at 4 μm with 80 μW of power at 300K and 200 mA average current. The InAsSb/InAsP SLS injection laser emitted at 3.6 μm at 120K.     

低温贮藏对脆肉鲩鱼肉肌动球蛋白特性的影响

以脆肉鲩为对象,研究低温贮藏条件对鱼肉肌动球蛋白性质的影响。结果表明:随着贮藏时间的延长,脆肉鲩肌肉中肌动球蛋白溶出量、Ca2+-ATPase活性、巯基和活性巯基含量下降、表面疏水性上升;贮藏温度对蛋白特性的影响显著,贮藏温度越高,Ca2+-ATPase活性和巯基含量越低,表面疏水性越高。     

MOCVD Growth of Doped GaAs/AlGaAs Quantum Heterostructures

The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells(MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) ontheir structures and performances were studied. Continuously grown MQWs, that is, no growth interruption atthe heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence(PL) compared withinterruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line correspondingto the compositional fluctuation and impurity adsorption, and indicated noncommutative structures ofAlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained bycontinuously grown method while growth interruption caused performance degradation. It was concluded thatgrowth interruption may cause accumulation of residua1 impurities in the ambient as well as compositionalfluctuation while continuous growth at very low growth rates can overcome such problems.     

共晶高硅型铝合金焊丝CHM-Al4047的研制

采用连铸连轧+机械刮削光亮化工艺制备共晶高硅型铝合金焊丝CHM-Al4047,选择6061－T6铝合金板材作为试验母材进行焊接试验,并分析焊接接头致密性、力学性能及各微区金相组织。结果表明,焊件射线检测为Ⅰ级,接头抗拉强度均值201 MPa,接头系数0．69,弯曲性能优良;焊缝组织为针状共晶硅+细颗粒共晶硅+α(Al),热影响区Mg2Si相聚集长大形成稳定团簇状β相,导致接头热影响区软化,拉伸试样断裂于热影响区。     

镍的金属有机化学气相沉积及相关因素的研究

研究了以碳基镍为沉积源，利用MOCVD技术沉积镍薄膜；讨论了沉积温度及压力对沉积速率的影响，以及利用SEM、XRD、DSC等分析手段来探讨沉积温度及不同沉积基体对薄膜微观形态的影响。结果表明，沉积温度约为150℃可以得到较快的沉积速率，而且薄膜连续具有金属光泽；以铜为沉积基体所得到的薄膜其微观形态中有明显的晶粒，以玻璃为基体得到的薄膜却含有部分非晶态的组织；沉积速率随着反应室工作压力的增加而下降。     

Preparation and characterization of single crystalline In2O3 films deposited on MgO (110) substrates by MOCVD

Epitaxial indium oxide (In₂O₃) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500 °C to 700 °C. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In₂O₃ film deposited at 600 °C exhibits the best crystalline quality. A clear epitaxial relationship of In₂O₃ (110)|MgO (110) with In₂O₃ [001]|MgO [001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In₂O₃ films is about 3.55–3.70 eV.