3-D Elasticity Solutions of Layered Rectangular Plates Subjected to Thermo-Loads

According to the exact three-dimensional (3D) thermoelasticity theory, the elasticity solution of the simply-supported layered rectangular plates subjected to steady temperature loads was studied. An analytical method was developed to solve the temperature, stress and displacement fields in the plate. Firstly, the general solutions of the temperature, displacements and stresses in a simply-supported isotropic layer were obtained by solving the 3-D heat conduction equation and the 3-D equations of elasticity respectively, which were expressed in the form of double Fourier series. Then, the temperature, displacement and stress relationships between the upper surface and the lower surface of the isotropic layer were derived. Based on the continuity of the temperature, the heat flux, the displacements and the stresses on the interface of two adjacent layers with different material properties, the recursive formulae of temperature, displacements and stresses between the bottom layer and the top layer of the layered plate were obtained by using the transfer matrix method. The unknown coefficients in the solutions for every layer were uniquely determined by the upper surface and lower surface conditions of the plate. The distributions of the temperature, displacements and stresses in the plate were given by substituting the unknown coefficients obtained back to the recurrence formulae and the solutions. The convergence of the solutions was checked with respect to the number of the terms of series. Comparing the results with those obtained from the finite element method, the correctness of the present method was verified. Finally, the effects of surface temperatures, plate thickness, layer number and material properties of each layer on the distributions of the temperature, displacements and stresses in the plates were discussed in detail.     

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Silicon underpins microelectronics but lacks the photonic capability needed for next‐generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare‐earth (RE) implantation is a promising approach to bestow photonic capability to silicon but is limited to internal RE transition wavelengths. Reported here is the first observation of direct optical transitions from the silicon band edge to internal f‐levels of implanted REs (Ce, Eu, and Yb); this overturns previously held assumptions about the alignment of RE levels to the silicon band gap. The photoluminescence lines are massively redshifted to several technologically useful wavelengths and modeling of their splitting indicates that they must originate from the REs. Eu‐implanted silicon devices display a greatly enhanced electroluminescence efficiency of 8%. Also observed is the first crystal field splitting in Ce luminescence. Mid‐IR silicon photodetectors with specific detectivities comparable to existing state‐of‐the‐art mid‐IR detectors are demonstrated.     

开关电源Boost变换器输出纹波的仿真研究

文章在分析典型DC-DC变换拓扑结构的基础上,建立了降压型（Boost）DC-DC变换器的PSpice仿真模型。在三种工作模式下,针对输入电压、电感和负载电阻对输出电压纹波都有不同程度的影响,对Boost变换器输出纹波电压的影响因素进行了分析。其结论为Boost型DC-DC变换器的设计和研制提供了理论依据。     

含至多四个参与者的量子秘密共享方案的最优信息率

信息率是衡量量子秘密共享方案性能的一个重要指标.在本文中,我们利用超图的相关理论刻画了量子存取结构.然后,利用超图和量子存取结构间的关系给出了参与者人数至多为4的所有13个量子存取结构,并基于量子信息论研究了其最优信息率及所对应的完善的量子秘密共享方案.对其中的5种存取结构的最优信息率的准确值进行了计算,并讨论了达到此信息率的方案的具体构造;对余下的8种存取结构的最优信息率的上界进行了计算.     

Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.     

Progressive NO2 Sensors with Rapid Alarm and Persistent Memory-Type Responses for Wide-Range Sensing Using Antimony Triselenide Nanoflakes

Antimony triselenide (Sb₂Se₃) nanoflake-based nitrogen dioxide (NO₂) sensors exhibit a progressive bifunctional gas-sensing performance, with a rapid alarm for hazardous highly concentrated gases, and an advanced memory-type function for low-concentration (<1 ppm) monitoring repeated under potentially fatal exposure. Rectangular and cuboid shaped Sb₂Se₃ nanoflakes, comprising van der Waals planes with large surface areas and covalent bond planes with small areas, can rapidly detect a wide range of NO₂ gas concentrations from 0.1 to 100 ppm. These Sb₂Se₃ nanoflakes are found to be suitable for physisorption-based gas sensing owing to their anisotropic quasi-2D crystal structure with extremely enlarged van der Waals planes, where they are humidity-insensitive and consequently exhibit an extremely stable baseline current. The Sb₂Se₃ nanoflake sensor exhibits a room-temperature/low-voltage operation, which is noticeable owing to its low energy consumption and rapid response even under a NO₂ gas flow of only 1 ppm. As a result, the Sb₂Se₃ nanoflake sensor is suitable for the development of a rapid alarm system. Furthermore, the persistent gas-sensing conductivity of the sensor with a slow decaying current can enable the development of a progressive memory-type sensor that retains the previous signal under irregular gas injection at low concentrations.     

基于ARX模型的压电智能结构振动预测控制

采用预测控制法对压电智能结构的振动主动控制进行了实验研究，通过实验方法建立了系统的ARX模型，并在此基础上设计了预测控制器对结构进行振动主动控制。实验结果验证了该方法在压电智能结构振动主动控制中的可行性和有效性。     

用三带和全带模型蒙特卡罗方法模拟纤锌矿相GaN体材料输运特性结果的比较

报道了分别用三带和全带模型蒙特卡罗方法模拟纤锌矿相GaN体材料输运特性的结果,并对基于两种模型的模拟结果进行了比较.在低场区,基于两种模型获得的输运特性基本相同,但在高场区却表现出明显的差别.这是因为在高场区,电子平均能量较高,多数电子处于能带图中的高能态位置,电子能量与波矢量的关系表现出明显的非椭圆特性.由于三带模型假定了能量与波矢量简单关系,故算得的平均能量,高于由全带蒙特卡罗模拟算得的能量.从而导致其它特性的差别.全带模型包含了基于能带理论算得的能带结构的所有特性,故模拟结果更加精确.     

离子束能量和衬底温度对氧化钆结构的影响

利用双离子束沉积技术，在Si(100)衬底上制备了氧化钆薄膜. 离子束能量在100～500eV范围内，衬底温度较低时薄膜为(402)择优取向的单斜结构，随着衬底温度的增加，择优取向转为(202)方向. 当衬底温度是700℃时，出现了立方结构，这是由于离子束加热的作用，导致低温下出现单斜结构. XPS研究表明薄膜中存在氧缺陷，改进工艺条件可消除部分缺陷.     

强度调制型光纤接近觉传感结构及发展新趋势

对近年发展的几种有代表性的强度调制机器人光纤接近觉传感的结构、机理进行了系统的介绍和比较,指出了传感结构设计需要考虑的关键问题以及今后发展趋势。