A novel robust current control approach using adaptive line enhancer for three‐phase current‐source active power filter

An effective system control method is presented for applying a three‐phase current‐source PWM converter with a deadbeat controller to active power filters (APFs). In the shunt‐type configuration, the APF is controlled such that the current drawn by the APF from the utility is equal to the current harmonics and reactive current required for the load. To attain the time‐optimal response of the APF supply current, a two‐dimensional deadbeat control scheme is applied to APF current control. Furthermore, in order to cancel both the delay in the two‐dimensional deadbeat control scheme and the delay in DSP control strategy, an Adaptive Line Enhancer (ALE) is introduced in order to predict the desired value three sampling periods ahead. ALE has another function of bringing robustness to the deadbeat control system. Due to the ALE, settling time is made short in a transient state. On the other hand, total harmonic distortion (THD) of source currents can be minimized compared to the case where ideal identification of the controlled system can be made. The experimental results obtained from the DSP‐based APF are also reported. The compensating ability of this APF is very high in accuracy and responsiveness although the modulation frequency is rather low. © 2004 Wiley Periodicals, Inc. Electr Eng Jpn, 150(1): 50–61, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20014     

基于最小截面差的相位展开

相位展开 (PhU)问题从理论上讲是一个不适定问题。根据被测物理量的整体连续性 ,提出了一种基于最小截面差的相位展开方法。理论分析和对实验条纹图的处理结果表明 ,该方法特别适合于具有相位间断大于π ,条纹欠采样及随机噪声等条纹图的相位展开。同支切 (Branchcuts)法相比 ,该方法具有算法简单、计算量小且可靠度高的特点 ,具有一定的实用性。     

任意型一维FIR数字滤波器设计新方法

本文介绍了一种设计任意型（宽带、窄带、低阶、高阶、低通、高通、带通、带阻）一维FIR数字滤波器新方法．给出设计不同类型滤波器的统一方法。各种类型滤波器脉冲响应的设计公式简单、计算方便。该方法消除了Gibbs现象．不仅克服了优化设计中收敛速度、设计精度及初值选取等问题，而且减少设计高阶滤波器的时间。最后，本文给出了各种类型滤波器设计的仿真结果。     

Nd：MgO：LiNbO3晶体的荧光光谱及其双晶体腔内互倍频实验

采用激光感生荧光技术测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的偏振荧光光谱，简要地说明了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３双晶体腔内互倍频的基本原理，并在实验中用染料激光作泵浦源实现了其双晶体腔内互倍频运转；得到５４３ｎｍ横模倍频绿光单端输出约ＹＭＷ，腔前泵浦阈值约３８ＭＷ，总转换效率约为１．３％。     

高频等参数感应(ВИКИЗ)测井技术应用

介绍了高频等参数感应的基本原理。以胜利油田比较典型的 3口井为例 ,详细分析了高频感应资料在划分薄夹层、确定储层流体饱和类型、评价储层电阻率空间分布等方面的应用。研究结果表明 ,高频感应具有极高的纵向分辨率和较好的径向探测特性 ,能够准确计算地层真电阻率、侵入带电阻率及侵入半径 ,通过与常规感应及薄层测井资料的对比 ,论证了高频等参数感应在测井技术应用上的优越性     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

储层横向相变对剩余油分布的影响

处在构造边部、低部位的商５－５井，在改注水井排液中发现不含水的高产这种非常规现象，由此引起对地质因素的分析。浅湖相沉积的主体是滩砂微相，它可细分为“滩脊”和“滩侧”，其中“滩脊”砂体的泥质含量低，孔隙度、渗透率都较高，而“滩侧”则泥质含量高，物性差。在从“滩脊”砂体向“滩侧”过渡时，极易形成类似于砂体尖灭的岩性封堵，造成剩余油富集，而“滩脊”不一定就在构造的高部位。陆相沉积的砂体非均质性很强，孔隙度和渗透率在横向上的变化很大，高部位的油层水淹，低部位的油层不一定就高含水，这是因为砂体横向上的非均质性，使同一时间单元沉积的砂体很可能不连通。基于这些分析，地质工作者不妨运用沉积微相的原理在构造的低部位或边部寻找剩余油富集区，商５－５井的现实给了我们很好的启示。     

IC—V100电台锁相环频率合成器

本文从频率合成器的结构、功能入手,详细阐述了频率编程的原理及方法。     

低相噪,低杂波数字锁相环路滤波器的设计

较详细地分析数字锁相频率合成器的相位噪声，着重用控制论方法对低相噪、低杂波锁相环的环路滤波器进行设计，并用某Ｓ波段频率合成器的实验结果进行了验证。     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.