Photo-reversible Reaction in Polymer Langmuir-Blodgett Films

Preparation of photoreactive Langmuir-Blodgett (LB) films was carried out using polymers/oligomers prepared from long-chain dialkyl esters of di-and tetra-olefins and having cyclobutane rings in the main chain. These polymers/oligomers formed stable monolayers on a water surface when mixed with arachidic acid. These monolayers could be deposited onto a substrate successfully forming Y-type films. The oligomer LB films were polymerized on irradiation. The polymer LB films showed a photo-reversible process between polymers and oligomers, depending on wavelength of the irradiating light. On the basis of spectral data and molecular weight change, this behaviour was found to be caused by cleavage and formation of cyclobutane rings.     

Modification of poly(N-vinyl-carbazole) thin films by bromine doping

Poly(N-vinyl-carbazole) (PVK) thin films doped with bromine has been studied by scanning electron microscopy, X-ray diffraction, infrared absorption, X-ray photoelectron spectroscopy (XPS), electron spin resonance (ESR), optical transmission (visible, near ultra violet) and conductivity measurements. The polymer has been doped at room temperature and at 373 K. It is shown by ESR, XPS and optical measurements that a charge transfer complex (CT-complex) is formed between PVK and Br. However, if some bromine acts as dopant of the polymer there is another bromine contribution, which corresponds to bromine covalently bonded to PVK and some only adsorbed. It is also shown by ESR that there is not only polymer doping by bromine but also some partial polymer degradation. Therefore, it can be said that the optimum doping condition of PVK thin films with bromine has been shown to be room temperature post-doping.     

Study on Oxygen-Sensing Properties of LaNiO3 Thin Films

The synthesis of rare-earth perovskite-type composition thin films of LaNiO₃ by means of the inorganic-sol-gel (ISG) method was studied. The structural stability under high temperature in reducing atmospheres and the oxygen-sensitivity mechanism of the LaNiO₃ thin films were examined. It is shown that under the experimental conditions, LaNiO₃ decomposes and the valance states of nickel are +2 and +3.     

(Fe_(0.86)Zr_(0.033)Nb_(0.033)B_(0.068)Cu_(0.01))_x(Al_2O_3)_(1-x)颗粒膜的霍耳效应

用磁控溅射方法制备了系列 (Fe0 .86 Zr0 .0 33Nb0 .0 33B0 .0 6 8Cu0 .0 1 ) x(Al2 O3) 1 -x颗粒膜样品 ,体积百分比x从 0 .3 3～ 0 .63 ,样品厚度约为10 0nm。室温下在Fe0 .86 Zr0 .0 33Nb0 .0 33B0 .0 6 8Cu0 .0 1 体积百分比x =0 .43时得到 17.5 μΩ·cm的最大饱和霍耳电阻率 ,比纯铁磁金属提高了 3～ 4个量级。对其磁性和微结构进行了研究 ,样品霍耳电阻率随外场的变化曲线 ρxy～H与磁场平行于膜面时的磁化曲线M～H有相似性 ,说明霍尔电阻率 ρxy与磁化强度M相关。样品电阻率 ρxx随金属体积百分比x的减小而增加 ,在x =0 .43附近发生突变 ,从金属导电变为绝缘体。根据微结构和输运性质对可能的机制进行了探讨     

石英晶体监控法镀制高精度光学薄膜

讨论了石英晶体监控法在光学薄膜镀制过程中的应用原理。通过与常规的光学监控法镀制的膜层相比较．证实了石英晶体监控法有助于提高光学薄膜的光学品质。试验表明所镀膜层的光学性能优异，在光通信和激光器等领域具有广阔的应用前景。     

Experimental investigations of the effect of new passive safety systems on the temperature state of fuel elements

Results of experiments conducted on a large-scale integral PSB-VVéR bench and directed toward investigation of the performance of new passive safety systems for nuclear plants with a water-cooled power reactor, an additional system for passive flooding of the active zone, and a system for the passive removal of heat from steam generators are presented. __________ Translated from élektricheskie Stantsii, No. 9, September 2007, pp. 7–10.     

光隔离器及其相关的磁光材料

本文简要介绍了磁光隔离器的理论、结构和分类 ,并提出了该器件今后发展的几个问题 ,最后介绍了几种磁光材料     

应用ITO膜作电荷收集极的位置灵敏探测器

首次尝试将ITO（Indium Tin Oxide）膜与微通道板（Microchannel Plate）结合用作位置灵敏探测器，并对该探测器的线性、位置分辨及探测效率作了测试，得到了令人满意的结果。     

只读式超分辨光盘的膜层设计和分析

超分辨技术是一种无需减小记录波长或增大数值孔径而提高存储密度的方法。Ge Sb Te是一种良好的相变光存储材料 ,在超分辨光盘中可作为掩膜。利用多层膜反射率的矩阵法计算了掩膜为Ge2 Sb2 Te5薄膜的超分辨只读式光盘的光学参数与各膜层厚度之间的关系 ,最后得到了较为理想的膜层厚度匹配。采用磁控溅射法制备了只读式超分辨光盘 ,测量了光盘的光学性质。     

CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.