Catalytic decomposition of HCFC22 (CHClF2)

The catalytic decomposition of CHClF₂ was studied over various acidic metal oxides in a fixed-bed reactor. The Cr₂O₃ZrO₂ exhibited the highest activity. The presence of water vapor in the reaction system suppresses the transformation of oxides to fluorides, progresses the formation of CO₂, and it improves the catalysts life.     

A comparison of backpropagation and general regression neural networks in quantative trace metal analysis using anodic stripping voltammetry and cybernetic instrumentation

A comparison is made between backpropagation and general regression neural networks for the prediction of parts per billion lead concentration when used to process data obtained from digested curry powder by the electrochemical analysis method of differential pulse, anodic stripping at a thin film mercury electrode (TFME). Two data sets are used, one requiring the net to classify an unknown analytical data vector into one of a number of previously learnt concentrations, and one requiring the net to predict the probable concentration of an unknown sample by interpolation of the already learnt concentrations. For both of these data sets the general regression neural network is shown to train faster and to provide results superior to those obtained by backpropagation.     

国外离子束系统（IBS）发展概况

综述了国外离子束刻蚀和沉积系统的研究进展，指出了离子束系统在半导体技术研究，开发和生产中的重要性。     

以废钡渣为原料制取氯化钡的研究

本文研究了以直接耐晒黑Ｇ染料生产中的废钡渣为原料制取氯化钡的方法，氯化钡的得率达到废钡渣量的７０．９９％，产品质量达到一级品的标准。     

Graphite formation on Ni film by chemical vapor deposition

Thin film formation of graphite by chemical vapor deposition using 2-methyl-1,2′-naphthyl ketone as a starting material was carried out on Ni film substrates. On Ni films directly deposited on quartz glass, the graphite films were obtained when the Ni film thickness was above 1 000 Å and above 5 000 Å at 700 °C and 1 000 °C, respectively. Depositions on thinner Ni film substrates comprise amorphous carbon (a-C) or graphite tubes which was owing to the thermal coagulation of the Ni film into droplets. On the other hand, graphite film was obtained on the Ni film with thickness 10 Å when a-C was inserted between the Ni film and the quartz glass. The coagulation of the Ni film is considered to be avoided by inserting a-C layer.     

金属蒸气法制备聚合物固载Pd－Cu双金属原子簇

为了不使用任何还原剂而获得聚合物固载高分散零价双金属加氢催化剂，利用金属蒸气法制备了３种不同Ｐｄ／Ｃｕ质量比的聚合物固载双金属原子簇。透射电镜（ＴＥＭ）和Ｘ衍射（ＸＲＤ）测定表明，Ｐｄ－Ｃｕ原子簇粒度很小，平均直径小于３．０ｎｍ。Ｘ射线光电子能谱（ＸＰＳ）表明，Ｐｄ和Ｃｕ均为零价态。Ｐｄ－Ｃｕ原子簇在异丙叉加氢反应中具有很高的活性和选择性。这些结果提供了令人信服的证据，即金属蒸气法可用于在聚合物孔穴内直接而温和地置入小的零价金属原子簇，而且这样制备的聚合物固载金属原子簇很适合于催化应用。     

在教学中推行微型化学实验势在必行

微型化学实验是当今化学教学中的重要变革之一。本文简单介绍了微型化学实验的特点和当前国内外发展的概况，倡议在我省的化学中尽快推行微型化学实验     

Improvement of the optical properties of electrodeposited CuInSe2 thin films by thermal and chemical treatments

Cu, In and Se have been codeposited in thin films by potentiostatic one-step electrodeposition. The as-deposited material has shown direct optical transitions attributable to the CuInSe₂ semiconductor, but also additional absorption corresponding to another semimetallic phase. The secondary phases are selenium and copper selenide compounds which have been determined by composition measurements. In order to eliminate the semimetallic phases and to improve the semiconductor behaviour of the electrodeposited material, thermal and chemical treatments have been performed. After heat-treatment of the samples at 400°C in flowing argon, elemental selenium loss has been detected together with an enhancement of the allowed direct optical transition. The subsequent chemical etching of the layers in a KCN solution has showed to be successful in eliminating the copper selenide phases which were responsible of the remaining sub-bandgap absorption.     

Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy

The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi₂ is confirmed by the surface peak analysis. Initially, FeSi₂ grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure.