Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition (MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate. The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure. The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms.     

Electron microscope studies of InxGav1−xAs/GaAs/Si grown by metalorganic chemical vapor deposition

The microstructure of In_xGa_1−xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.     

Modeling of in situ monitored laser reflectance during MOCVD growth of HgCdTe

An effective way to in situ monitor the metalorganic chemical vapor deposition (MOCVD) of HgCdTe/CdTe/ZnTe on GaAs or GaAs/Si substrates is presented. Specular He-Ne laser reflectance was used to in situ monitor the growth rates, layer thickness, and morphology for each layer in the grown multilayer structure. In situ monitoring has enabled precise measurements of ZnTe nucleation and CdTe buffer layer thicknesses. Monitoring the constancy of reflectance during the thicker CdTe buffer growth where absorption in the CdTe reduces reflectance to just the surface component has led to optimum buffer growth ensuring good quality of subsequently grown HgCdTe. During the interdiffused multilayer process (IMP) HgCdTe growth, because multiple interfaces are present within the absorption length, a periodic reflectance signal is maintained throughout this growth cycle. A theoretical model was developed to extract IMP layer thicknesses from in situ recorded experimental data. For structures that required the growth of a larger band gap HgCdTe cap layer on top of a smaller band gap active layer, in situ monitored reflectance data allowed determination of alloy composition in the cap layer as well. Continuous monitoring of IMP parameters established the stability of growth conditions, translating into depth uniformity of the grown material, and allowed diagnosis of growth rate instabilities in terms of changes in the HgTe and CdTe parts of the IMP cycle. A unique advantage of in situ laser monitoring is the opportunity to perform “interactive” crystal growth, a development that is a key to real time MOCVD HgCdTe feedback growth control.     

MOCVD生长的CdZnTe／ZnTe多量子附的激子光学特性

用常压ＭＯＣＶＤ方法在ＧａＡｓ（１００）衬底上生长了ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱。在室温下，观测到了ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱的三个谱带发光。根据ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱的吸收光谱和不同激发光强下的发光光谱，分别归结ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱中观测到的三个发光谱带于覆盖层发光、ｎ＝１的重空穴激子发光及杂质发光。     

用MOCVD法制备铁系云母珠光颜料

以Fe(CO) 5为物源 ,在常压喷动流化反应器中 ,以金属有机化学气相沉积 (MOCVD)法对云母粉进行包覆 ,制备铁系 -云母珠光颜料。实验结果表明 :在沉积温度 2 5 0℃ ,氧气流量 3mL·s-1,沉积时间 5min时能得到棕色色泽的珠光颜料 ;随着沉积温度的提高和反应时间的延长 ,可获得红棕、金红、橙红、深红等不同色泽的珠光颜料。用色差仪测定颜料的明度值L 、红度值a 、黄度值b ;X衍射仪表征颜料的表面成分 ;酸滴定计算氧化物的涂覆率。探讨了温度、时间、氧量对珠光颜料表面成分和珠光光泽的影响     

Electrochemical anticorrosion performance evaluation of Al2O3 coatings deposited by MOCVD on an industrial brass substrate

Alumina (Al₂O₃) coatings of different thickness were deposited on OT59 brass substrate (BS) using the metal organic chemical vapour deposition (MOCVD) technique to evaluate the corrosion performance by EIS measurements. The used precursor was dimethyl-aluminium-isopropoxide. Electrochemical characterizations of the deposited films were performed in a standard very aggressive acidic solution (aerated 1N H₂SO₄ at 25 °C up to 168 h of immersion time) by means of direct current method (Tafel curves) and electrochemical impedance spectroscopy (EIS). The Rutherford backscattering spectroscopy (RBS) indicated that the films are very pure with the correct Al₂O₃ stoichiometry, while the IR absorption spectra showed that the films did not contain any OH groups. The surface film morphology was investigated by atomic force microscopy (AFM) and displayed a globular texture. The films were very smooth, with a maximum root mean square roughness, for example, of 14 nm for a 0.96 μm thick coating. The EIS data confirmed, as expected, that a 2.40 μm Al₂O₃ layer ensures the best corrosion protection after 168 h of immersion in the very acidic environment used.     

用金属有机化合物制备铁电薄膜：工艺及进展

本文概述了以金属有机化合物为原料制备铁电薄膜的工艺过程、工艺特点及最新研究进展，着重介绍了金属有机物化学气相溶积（ＭＯＣＶＤ），金属有机物热分解（ＭＯＤ）以及溶胶－凝胶（Ｓｏｌ－Ｇｅｌ）三种制备技术在铁电薄膜制备领域中的应用。     

半绝缘衬底上Si掺杂InP的纳米孔腐蚀与电学性质研究

利用MOCVD在InP半绝缘衬底上生长N型InP,在KOH溶液中电化学腐蚀形成纳米多孔结构的。通过实验证实在半绝缘衬底上的InP纳米孔腐蚀具有可行性,并且得到了腐蚀质量较好、图形清晰、结构规整的纳米孔材料。在对其进行霍尔测试,得到了腐蚀孔对于n型InP材料表面电学性质的改变,实现了低掺杂浓度(10~(18)cm~(-3))的InP通过表面纳米孔腐蚀的方式提高载流子浓度,改善n型InP层表面电学性能。     

MOCVD Growth of Doped GaAs/AlGaAs Quantum Heterostructures

The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells(MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) ontheir structures and performances were studied. Continuously grown MQWs, that is, no growth interruption atthe heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence(PL) compared withinterruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line correspondingto the compositional fluctuation and impurity adsorption, and indicated noncommutative structures ofAlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained bycontinuously grown method while growth interruption caused performance degradation. It was concluded thatgrowth interruption may cause accumulation of residua1 impurities in the ambient as well as compositionalfluctuation while continuous growth at very low growth rates can overcome such problems.     

Optical third-harmonic investigations of gallium nitride nucleation layers on sapphire

The magnitude of the χ _xxxx ⁽³⁾ element of the third-order optical susceptibility was measured in a series of wurtzite phase GaN nucleation layers (～450Å) deposited on (00.1) sapphire at 540°C and annealed to various temperatures up to 1050°C. The nonlinear optical response exhibited a significant increase in films that were annealed to temperatures in the range of 1015 to 1050°C. In addition, the correlation between the magnitude of χ _xxxx ⁽³⁾ with both the maximum value of the linear absorbance gradient and the residual homogeneous strain in the overlayer suggests that variations in the crystalline content of the film and the bonding distance between the Ga and N atoms are primary factors in determining the third-order nonlinearity in GaN.