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121.
Rodrigo T. Bento Olandir V. Correa Marina F. Pillis 《Journal of the European Ceramic Society》2019,39(12):3498-3504
Titanium dioxide ceramic coatings have been used as catalysts in green technologies for water treatment. However, without the presence of a dopant, its photocatalytic activity is limited to the ultraviolet radiation region. The photocatalytic activity and the structural characteristics of undoped and sulfur-doped TiO2 films grown at 400 °C by metallorganic chemical vapor deposition (MOCVD) were studied. The photocatalytic behavior of the films was evaluated by methyl orange dye degradation under visible light. The results suggested the substitution of Ti4+ cations by S6+ ions into TiO2 structure of the doped samples. SO42? groups were observed on the surface. S-TiO2 film exhibited good photocatalytic activity under visible light irradiation, and the luminous intensity strongly influences the photocatalytic behavior of the S-TiO2 films. The results supported the idea that the sulfur-doped TiO2 films grown by MOCVD may be promising catalysts for water treatment under sunlight or visible light bulbs. 相似文献
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Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
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Atsunori Tanaka Woojin Choi Renjie Chen Shadi A. Dayeh 《Advanced materials (Deerfield Beach, Fla.)》2017,29(38)
Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain‐relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN‐on‐Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack‐free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 107 cm?2 achieved to date in GaN‐on‐Si is demonstrated. With these advances, the first vertical GaN metal–insulator–semiconductor field‐effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost‐effective high power device paradigm on an Si CMOS platform are demonstrated 相似文献
125.
Quan Wang Changxi Chen Wei Li Yanbin Qin Lijuan Jiang Chun Feng Qian Wang Hongling Xiao Xiufang Chen Fengqi Liu Xiaoliang Wang Xiangang Xu Zhanguo Wang 《半导体学报》2021,42(12):49-56
State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized.Hall mobility of 2291.1 cm2/(V·s) and two-dimensional electron gas density of 9.954 × 1012 cm-2 were achieved at 300 K.The HEMT devices with a 0.45-μm gate length exhibited maximum drain current density as high as 1039.6 mA/mm and peak extrinsic transconduct-ance of 229.7 mS/mm.The fT of 30.89 GHz and fmax of 38.71 GHz were measured on the device.Load-pull measurements were performed and analyzed under (-3.5,28) V,(-3.5,34) V and (-3.5,40) V gate/drain direct current bias in class-AB,respectively.The uncooled device showed high linear power gain of 17.04 dB and high power-added efficiency of 50.56% at 8 GHz when drain biased at (-3.5,28) V.In addition,when drain biased at (-3.5,40) V,the device exhibited a saturation output power dens-ity up to 6.21 W/mm at 8 GHz,with a power gain of 11.94 dB and a power-added efficiency of 39.56%.Furthermore,the low fmax/fT ratio and the variation of the power sweep of the device at 8 GHz with drain bias voltage were analyzed. 相似文献
126.
TiN films were deposited with remote plasma metal organic chemical vapor deposition (MOCVD) from tetrakis-diethyl-amido-titanium
(TDEAT) at substrate temperature of 250–500°C and plasma power of 20–80 W. The growth rate using N2 plasma is slower than that with H2 plasma and showed 9.33 kcal/mol of activation energy. In the range of 350–400°C., higher crystallinity and surface roughness
were observed and resistivity was relatively low. As the temperature increased to 500°C., randomely oriented structure and
smooth surface with higher resistivity were obtained. At low deposition temperature, carbon was incorporated as TiC phase,
as the deposition temperature increases, carbon was found as hydrocarbon. At 40 W of plasma power, higher crystallinity and
rough surface with lower resistivity were obtained and increasing the plasma power to 80 W leads to low crystallinity, smooth
surface and higher resistivity. It may be due to the incorporation of hydrocarbon decomposed in the gas phase. Surface roughness
was found to be related to the crystallinity of the film. 相似文献
127.
二极管是定向检波器的重要组件,提高定向检波器的检波灵敏度,需要降低二极管的开启电压.而平面掺杂势垒(PDB)二极管具有极低的势垒高度,适合制作定向检波器.设计了GaAs平面掺杂势垒二极管的材料结构,并采用金属有机化合物气相淀积(MOCVD)方法对其进行外延生长.对PDB二极管的物理模型进行了理论分析.通过模拟计算和实验分析了本征层厚度和p层的面电荷密度对PDB二极管I-V特性的影响.通过实验设计优化了材料结构参数,测试了其I-V特性,使PDB二极管的开启电压降低到了0.06 V,将此样品应用到定向检波器中测得检波灵敏度为20~ 25 mV/mW. 相似文献
128.
M.P. Singh K. Shalini S.A. Shivashankar G.C. Deepak N. Bhat T. Shripathi 《Materials Chemistry and Physics》2008,110(2-3):337-343
A study of growth, structure, and properties of Eu2O3 thin films were carried out. Films were grown at 500–600 °C temperature range on Si(1 0 0) and fused quartz from the complex of Eu(acac)3·Phen by low pressure metalorganic chemical vapor deposition technique which has been rarely used for Eu2O3 deposition. These films were polycrystalline. Depending on growth conditions and substrates employed, these films had also possessed a parasitic phase. This phase can be removed by post-deposition annealing in oxidizing ambient. Morphology of the films was characterized by well-packed spherical mounds. Optical measurements exhibited that the bandgap of pure Eu2O3 phase was 4.4 eV. High frequency 1 MHz capacitance–voltage (C–V) measurements showed that the dielectric constant of pure Eu2O3 film was about 12. Possible effects of cation and oxygen deficiency and parasitic phase on the optical and electrical properties of Eu2O3 films have been briefly discussed. 相似文献
129.
采用直接液体榆运-金属有机化合物化学气相沉积技术(DLI-MOCVD)制备Pb(ZrxTi1-x)O3薄膜(PZT薄膜),并进行了相关研究,通过调节MOCVD中影响PZT质量的主要工艺参数(温度、压力、系统的气体(Ar,O2)流量、衬底转速、蠕动泵速),制备不同组分PZT薄膜(均匀性≥±95%,尺寸为2.54—20.32cm(1—8in),厚度为50—500nm).经XRD测试可见,PZT薄膜已形成钙钛矿结构.用SEM对其表面进行分析,结果表明,PZT薄膜表面致密均匀. 相似文献
130.