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131.
A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.AFM results showed that the root mean square of the surface roughness was just 0.11 nm.Optical transmission spectrum and high resolution X-ray diffraction(XRD)characterization both proved the high quality of the AlN template.The XRD(002)rocking curve full width at half maximum(FWHM)was about 53.7 arcsec and(102)FWHM was about 625 arcsec.The densities of screw threading dislocations(TDs)and edge TDs wereestimated to be - 6 × 10^6 cm^-2 and - 4.7 ×10^9 cm^-2. AlGaN of Al composition 80.2% was further grown on the AlN template. The RMS of the surface roughness was about 0.51 nm. XRD reciprocal space mapping was carried out to accurately determine the Al composition and relaxation status in the AlGaN epilayer. The XRD (002) rocking curve FWHM of the AIGaN epilayer was about 140 arcsec and (102) FWHM was about 537 arcsec. The density of screw TDs was estimated to be - 4 × 10^7 cm^-2 and that of edge TDs was - 3.3 × 10^9 cm^-2. These values all prove the high quality of the AlN template and AlGaN epilayer. 相似文献
132.
Kang Yuzhu Li Jianjun Ding Liang Yang Zhen Han Jun Deng Jun Zou Deshu Shen Guangdi 《半导体学报》2009,30(5):47-49
Resonant-cavity light-emitting diodes (RCLED) at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an AlGaInP material system has been chosen to grow the top DBRs. The emission properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5 mW at 20 mA and 2.2 V, and its spectrum full width at half maximum is about 10 nm. 相似文献
133.
提出一种结合双低温缓冲层和应变超晶格优势的高质量InP-on-GaAs复合衬底制备技术.研究发现LT-InP/LT-GaAs的双低温缓冲层比单一低温InP缓冲层的聚集应变的效果更为显著.并且,双低温缓冲层中的低温GaAs层存在一个最优生长厚度.当低温InP生长厚度一定,低温GaAs层的生长厚度达到优化生长厚度时,LT-InP/LT-GaAs双低温缓冲层能达到调节应变的最佳状态.最后,通过插入InGaP/lnP应变超晶格,并且优化其在外延层中的插入位置.得到了高质量的InP-on-GaAs的复合衬底,2μm厚的lnP外延层XRD-ω/2θ扫描的半高宽小于200. 相似文献
134.
135.
ZnO TFT Devices Built on Glass Substrates 总被引:1,自引:0,他引:1
J. Zhu H. Chen G. Saraf Z. Duan Y. Lu S.T. Hsu 《Journal of Electronic Materials》2008,37(9):1237-1240
ZnO thin-film transistors (TFTs) were built on glass substrates. The device with a top gate configuration operates in the
depletion mode. The ZnO channel was grown by metalorganic chemical vapor deposition (MOCVD) on glass at low temperature. SiO2 was used as the gate dielectric. The TFT has an on/off ratio of ∼4.0 × 104 and a channel field-effect mobility of ∼4.0 cm2/V s. The average transmittance of the ZnO film in the visible wavelength is ∼80%. To compare the characteristics of the TFTs
prepared by using a poly-ZnO and epitaxial-ZnO channel, an epi-ZnO TFT with the same configuration and dimensions was made
on an r-Al2O3 substrate. The epi-ZnO TFT shows higher field-effect mobility of ∼35 cm2/V s and on/off ratio of ∼108. 相似文献
136.
以玻璃为衬底,利用金属有机化学气相沉积(MOCVD)方法,在360℃附近实现ZnO薄膜的生长.利用ZnO为有源层制备底栅型薄膜晶体管.SiO2 被用作栅绝缘材料以有效的抑制漏泄电流的产生,达到氧化锌薄膜晶体管 (ZnO-TFT) 成功运作目的.ZnO-TFT 的电流开关(on/off)比达到104以上.ZnO-TFT 在可见光区平均光透过率大约为80%.以上表明利用ZnO 替代传统 Si 材料作有源层材料制备透明薄膜晶体管是可能的. 相似文献
137.
Conductive hafnium nitride (HfN) with negligible carbon impurity (<0.1 at.%) was chemically synthesized for the first time by post-rapid thermal annealing (PRTA)-assisted metal organic chemical vapor deposition (MOCVD) method. The thermodynamic instability of N-rich hafnium nitride (Hf3N4) phase, which is considered to be the dominant phase in CVD deposition of hafnium nitride, was utilized for pure and metallic HfN synthesis. By integrating the PRTA-HfN film into MOS capacitor, the electrical properties of the PRTA-HfN film as metal gate electrode were studied. Well behaved electrical characteristics such as about 4.9 eV of effective work function, low leakage current and large reduction in SiO2 equivalent oxide thickness (EOT), which was attributed to the combination of physical thinning of SiO2 and formation of high-κ interfacial layer, suggest the potential capability of PRTA-assisted MOCVD in chemically synthesizing HfN metal gate electrode for pMOS devices application. 相似文献
138.
Ruipeng Zhao Yinchang Ma Qing Liu Fei Zhang Yudong Xia Hao Tang Yuming Lu Chuanbing Cai Bowan Tao Yanrong Li 《Ceramics International》2018,44(11):12125-12131
The metal organic chemical vapor deposition (MOCVD) method was used to prepare GdYBCO films on LaMnO3/ homo epitaxial-MgO/ ion-beam-assisted-deposition-MgO/ solution-deposition-planarization-Y2O3 buffered Hastelloy tapes. By adopting a simple self-heating technique, the substrates were heated by the joule effect after applying a heating current (Ih) through Hastelloy metal tapes. The effects of substrate temperature and (Gd, Y)/Ba ratio (rc) in the precursor on the biaxial texture, surface morphology and superconducting performance of GdYBCO films were systematically investigated by varying the values of Ih and rc. Needle-like outgrowths formed on the substrate surface were characterized using a scanning electron microscope, energy dispersive spectrometer and X-ray diffraction system. The results show that a high Ih or rc leads to the formation of needle-like outgrowths. Therefore, Ih and rc are crucial process parameters that control the growth of needle-like outgrowths on the surface of GdYBCO films. Three hundred nanometer thick GdYBCO films were prepared at different Ih and rc by the MOCVD process. At an Ih of 27.0?A and an rc of 0.6, the surface of the GdYBCO film was very smooth and dense, which can provide a good template for multiple depositions of GdYBCO films. The critical current density of the deposited 300?nm-thick GdYBCO film was 4.4 MA/cm2 (77?K, 0?T), which is attributed to good biaxial texture and appropriate film composition. Furthermore, the microwave surface resistance (77?K, 10?GHz) of the GdYBCO film was merely 0.581?mΩ. 相似文献
139.
《Journal of the European Ceramic Society》2022,42(11):4456-4464
A series of 3 C-SiC coatings were prepared by organometallic chemical vapor deposition (MOCVD) using precursor solution containing a varying proportion of commercial-grade hexamethyldisiloxane (HMDSO) and n-hexane. The phase composition, bonding state, and microstructure of 3 C-SiC coatings were studied in detail by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The microstructure and mechanical properties of the optimal 3 C-SiC coating were characterized by scanning transmission electron microscopy (STEM) and nanoindentation, respectively. Our results revealed that the amount of undesired graphite phase can be significantly reduced in the 3 C-SiC coating by introducing hydrogen gas in the reaction chamber alongside increasing the ratio of HMDSO/n-hexane in the precursor mixture. The STEM results revealed that the optimal coating was predominantly composed of nano-crystalline 3 C-SiC grains alongside a small amount of amorphous graphite. The hardness and elastic modulus of the optimal coating were 38.19 GPa and 363.2 GPa, respectively. 相似文献
140.
Rodrigo T. Bento Olandir V. Correa Marina F. Pillis 《Journal of the European Ceramic Society》2019,39(12):3498-3504
Titanium dioxide ceramic coatings have been used as catalysts in green technologies for water treatment. However, without the presence of a dopant, its photocatalytic activity is limited to the ultraviolet radiation region. The photocatalytic activity and the structural characteristics of undoped and sulfur-doped TiO2 films grown at 400 °C by metallorganic chemical vapor deposition (MOCVD) were studied. The photocatalytic behavior of the films was evaluated by methyl orange dye degradation under visible light. The results suggested the substitution of Ti4+ cations by S6+ ions into TiO2 structure of the doped samples. SO42? groups were observed on the surface. S-TiO2 film exhibited good photocatalytic activity under visible light irradiation, and the luminous intensity strongly influences the photocatalytic behavior of the S-TiO2 films. The results supported the idea that the sulfur-doped TiO2 films grown by MOCVD may be promising catalysts for water treatment under sunlight or visible light bulbs. 相似文献