基于数值模拟的MOCVD反应器设计与优化

介绍了垂直喷淋式MOCVD反应器的最新计算机模拟仿真结果,并根据仿真结果对反应器的结构和参数进行了优化设计,应用在自行研制的用于GaN和四元化合物材料生长的设备中。     

MOCVD掺A_s的S_nO_2透明导电膜

本文采用有机金属化合物气相沉积(MOCVD)技术制备了可见光透过率>90％(厚度为10~2-10~4)、薄层方块电阻值为38-56Ω/□的SO_2·A,多晶透明导电薄膜,并简要报道了利用X射线衍射、电子衍射、扫描电子显微镜以及紫外可见吸收光谱等方法对膜层结构及性能的研究结果。     

MOCVD preparation of SBTN thin films from two organometallic sources bottles

Abstract

SrBi₂(Ta_0.7Nb_0.3)₂O₉ (SBTN) films were first prepared on (111)Pt/Ti/SiO₂/Si substrates by MOCVD from only two organometallic source bottles. Bi(CH₃)₃ and the mixture of Sr[Ta(O°C₂H₅)₆]₂ and Sr[Nb(O°C₂H₅)₆]₂ were used as source materials. High compositional reproducibility was obtained; the Nb/(Ta+Nb) ratio was the same as the mixing ratio of the source. Sr/(Ta+Nb) and Bi/(Ta+Nb) ratios can be controlled by the reactor pressure and the input gas flow rate ratio of the source gases. Almost single phase of SBTN was obtained for the film deposited at 500°C and the following heat-treated at 800°C in O₂ atmosphere. Pr and Ec values of 330 nm-thick SBTN film were 8.5 μC/cm² and 91 kV/cm, respectively and were larger than those of SrBi₂Ta₂O₉ film. There was no degradation after 5x10¹⁰ cycles polarization switching.     

Heteroepitaxial growth of indium phosphide on silicon by MOCVD using adduct source

Abstract

The heteroepitaxial growth of InP on Si by low pressure metalor‐ganic chemical vapor deposition is reported. Trimethylindium‐trimethylphosphine adduct was used as In source in this study. From X‐ray and SEM examinations, good crystallinity InP epilayers with mirror‐like surfaces can be grown directly on (100) and (111) p‐type Si substrates. Carrier concentration profile shows that the carrier distribution in the InP epilayer is very uniform. The efficient photo‐luminescence compared with that of InP homoepitaxy shows the good quality of InP/Si epilayers.     

引入GaN过渡层对Si（111）衬底上生长GaN外延的影响

本文研究了在Si(111)衬底上生长GaN外延层的方法。相比于直接在AlN缓冲层上生长GaN外延层,引入GaN过渡层显著地提高了外延层的晶体质量并降低了外延层的裂纹密度。使用X射线双晶衍射仪、光学显微镜以及在位监测曲线分析了GaN过渡层对外延层的晶体质量以及裂纹密度的影响。实验发现,直接在AlN缓冲层上生长外延层,晶体质量较差, X射线(0002)面半高宽最优值为0.686°,引入GaN过渡层后,通过调整生长条件,控制岛的长大与合并的过程,从而控制三维生长到二维生长过渡的过程,外延层的晶体质量明显提高, (0002)面半高宽降低为0.206°,并且裂纹明显减少。研究结果证明,通过生长合适厚度的GaN过渡层,可以得到高质量、无裂纹的GaN外延层。     

H2气氛对采用MOCVD 法在Si 衬底上外延生长AlN薄膜性能的影响?

采用金属有机化合物气相沉积法(MOCVD)在 Si(111)衬底上外延生长 AlN 薄膜,用高分辨 X射线衍射、扫描电子显微镜和原子力显微镜对外延生长所得 AlN 薄膜的性能进行表征,并研究了适量H2的引入对 AlN薄膜的晶体结构和表面形貌的影响.结果表明：在 Si衬底上外延生长 AlN薄膜过程中引入适量 H2,有利于提高 AlN岛间愈合程度,薄膜表面缺陷减少,表面粗糙度由4.0 nm 减少至2.1 nm;适量 H2的引入可使 AlN 薄膜的(0002)和(10-12)面的 X 射线摇摆曲线的半峰宽(FWHM)值从0.7°及1.1°分别减小到0.6°和0.9°,即刃型穿透位错密度和螺型穿透位错密度减少.     

喷淋式GaN-MOCVD反应室的CFD数值仿真及优化

利用计算流体力学(CFD)方法对某型立式喷淋式金属有机物化学气相沉积(MOCVD)反应室流场进行了三维数值仿真,研究了影响MOCVD反应室流场结构的各工作参数(流量、温度、压力)的作用机制,并对试制中的MOCVD设备的几何结构及进气方式进行了改进,采用了圆弧形过渡拐角及泊肃叶型入口速度剖面,以形成稳定均匀的流场,从而保证氮化镓(GaN)的生长质量。     

蓝宝石衬底的斜切角对GaN薄膜特性的影响

利用金属有机物化学气相沉积技术在具有斜切角度的蓝宝石衬底(0～0.3°)上生长了非故意掺杂GaN薄膜,并采用显微镜、X射线双晶衍射、光荧光及霍尔技术对外延薄膜的表面形貌、晶体质量、光学及电学特性进行了分析.结果表明,采用具有斜切角度的衬底,可以有效改善GaN外延薄膜的表面形貌、降低位错密度、提高GaN的晶体质量及其光电特性,并且存在一个衬底最优斜切角度0.2°,此时外延生长出的GaN薄膜的表面形貌和晶体质量最好.     

铱薄膜的MOCVD沉积效果研究

以乙酰丙酮铱为前驱体,采用金属有机化合物化学气相沉积(MOCVD)技术在Mo基体上制备Ir薄膜。研究Ir的沉积效果与沉积温度及反应气体(O2)间的关系。Ir薄膜的沉积速率与沉积温度之间的关系不符合Arrhenius方程,沉积速率与沉积温度绝对温度的倒数呈抛物线关系,当温度为750℃时,Ir的沉积速率达到最大值,沉积温度对Ir薄膜的显微形貌有显著影响;O2的流量对薄膜的成分、形貌及结构等均有显著影响。     

Preparation and characterization of single crystalline In2O3 films deposited on MgO (110) substrates by MOCVD

Epitaxial indium oxide (In₂O₃) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500 °C to 700 °C. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In₂O₃ film deposited at 600 °C exhibits the best crystalline quality. A clear epitaxial relationship of In₂O₃ (110)|MgO (110) with In₂O₃ [001]|MgO [001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In₂O₃ films is about 3.55–3.70 eV.