Ultraviolet photodetector fabricated from metal-organic chemical vapor deposited MgZnO

Wurtzite Mg_xZn_1−xO thin films were grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition. The as-grown films show clear exciton absorption at room temperature until the composition x = 0.25. A representative metal-semiconductor-metal structured photodetectors were fabricated from Mg_0.06Zn_0.94O film showed a peak responsivity of about 14.62 A/W at 340 nm, and the ultraviolet-visible rejection ratio (R340 nm/R400 nm) was more than two orders of magnitude at 3 V bias. The photodetector showed fast photoresponse with a rise time of 20 ns and a fall time of 400 ns.     

单电源供电MSM/HEMT OEIC

给出了InGaAsMSM光探测器与InP基InAlAs/InGaAs HEMT两种器件单片集成实现的OEIC光接收机的设计方法与测试结果。该光接收机采用单电源供电，由一级放大器，两级源级跟随器和一个反馈电阻组成，当光接收机工作在2．5Gbit/s时，跨阻可达53dBΩ，采用＋5V电源供电，功耗仅为160mW，可有效地应用在光纤通信接收系统中。     

Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs

Current transport in molecular beam epitaxy (MBE) GaAs grown at low and intermediate growth temperatures is strongly affected by defects. A model is developed here that shows that tunneling assisted by defect states can dominate, at some bias ranges, current transport in Schottky contacts to unannealed GaAs material grown at the intermediate temperature range of about 400°C. The deep defect states are modeled by quantum wells which trap electrons emitted from the cathode before re-emission to semiconductor. Comparison of theory with experimental data shows defect states of energies about 0.5 eVbelow conduction band to provide the best fit to data. This suggests that arsenic interstitials are likely to mediate this conduction. Comparison is also made between as-grown material and GaAs grown at the same temperature but annealed at 600°C. It is suggested that reduction of these defects by thermal annealing can explain lower current conduction at high biases in the annealed device as well as higher current conduction at low biases due to higher lifetime. Quenching of current by light in the as-grown material can also be explained based on occupancy of trap states. Identification of this mechanism can lead to its utilization in making ohmic contacts, or its elimination by growing tunneling barrier layers.     

单纯形最优化法介绍

本文简要介绍了在分析化学领域中得到广泛应用的单纯形最优化法,主要是基本单纯形法和改进型单纯形法。     

10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier

A 10 Gb/s OEIC (optoelectronic integrated circuit) optical receiver front-end has been studied and fab ricated based on the φ-76 mm GaAs PHEMT process; this is the first time that a limiting amplifier (LA) has been designed and realized using depletion mode PHEMT. An OEIC optical receiver front-end mode composed of an MSM photodiode and a current mode transimpedance amplifier (TIA) has been established and optimized by simu lation software ATLAS. The photodiode has a bandwidth of 10 GHz, a capacitance of 3 fF/μm and a photosensitive area of 50×50 μm~2. The whole chip has an area of 1511×666 μm~2. The LA bandwidth is expanded by spiral inductance which has been simulated by software HFSS. The chip area is 1950×1910μm~2 and the measured results demonstrate an input dynamic range of 34 dB (10-500 mVpp) with constant output swing of 500 tnVpp.     

Investigation of the dark electrical characteristics of the lateral metal–semiconductor–metal photodetectors using two‐dimensional numerical simulation

A detailed investigation of the dark electrical characteristics of the lateral metal–semiconductor–metal (MSM) structures is carried out using a two‐dimensional numerical simulation based on the drift‐diffusion model. The model includes image force barrier lowering and current‐dependent recombination velocities at the Schottky contacts. The simulation was used to examine the details of the depletion region, the electric field distributions, and the current path in the active region of the planar structure. The obtained results were shown to be very helpful to understand and to explain various behaviours seen in the characteristics of the metal–semiconductor–metal (MSM) structures. The dark I‐V characteristics of the structure were also calculated and compared with published experimental data. The results reveal the importance of the image force lowering on the characteristics and the hole injection at the forward contact beyond the flat band voltage. Copyright © 2010 John Wiley & Sons, Ltd.     

Micro-displacement measurement based on multiple self-mixing interference technology

Multiple self-mixing (MSM) interferometry, a high-precision and effective method for measuring micro-displacement, is proposed in this paper. First, a triangular wave is used to drive an electro-optic modulator for the phase modulation of MSM interference signals. Then, the five-step phase-shifting algorithm is used to demodulate the modulated MSM interference signals. Finally, the displacement curves of the vibrating target are reconstructed. MSM interferometry is used to measure the displacement of sinusoidal motion with a peak-to-peak value of 2000 nm and a frequency of 10 Hz. Simulation results show that the maximum reconstruction error of MSM interferometry is 0.074 nm. Experimental results show that the maximum reconstruction errors of MSM interferometry are less than 4 nm. Therefore, MSM interferometry satisfies the high precision required by displacement measurement systems.     

GaN基紫外光探测器的研究进展

相对于其他类型的探测器,GaN基紫外光探测器具有很多优点.本文主要介绍了近几年GaN基紫外光探测器的发展,并对各种结构形式进行了比较.     

空心钛硅分子筛在二甲基硫醚液相氧化反应中的催化性能

在以过氧化氢为氧化剂的二甲基硫醚液相氧化反应体系中,对空心钛硅分子筛（HTS）的催化性能进行了系统研究,详细考察了催化剂存在与否以及催化剂用量、反应时间、反应物料配比及溶剂用量等不同反应条件变化对二甲基硫醚温和液相氧化反应的影响。研究发现,在温和反应条件下,HTS催化二甲基硫醚氧化反应中主要产物是二甲基亚砜和二甲基砜。经优化后,能够获得较好的氧化二甲基硫醚制备二甲基亚砜的反应效果,在二甲基硫醚转化率超过99%的情况下,二甲基亚砜选择性可达95%以上。     

基于多模-单模-多模结构和光纤布拉格光栅同时测量温度和折射率

利用单模光纤(SMF)中的包层模与纤芯导模之间的干涉,提出了一种基于多模-单模-多模(MSM)结构与布拉格光栅(FBG)级联可同时测量温度和折射率的传感器.基于MSM结构的干涉谱和FBG的透射峰对温度和折射率具有不同响应灵敏度的特点,利用敏感矩阵实现了对温度和折射率的同时测量.实验测得MSM结构和FBG的温度灵敏度分别为0.055 2 nm/℃和0.015 8 nm/℃,MSM结构的折射率灵敏度为109.702 nm/RIU,而FBG对折射率变化不敏感.温度和折射率的测量精度分别为士0.32℃和士0.002 3.实验显示提出的MSM结构的温度灵敏度比单模-多模-单模(SMS)结构传感器提高了5倍,同时由于SMF中的包层模对外界环境的变化较敏感,该MSM结构也可应用于其他传感领域.