无油墨印刷包装材料激光制版的研究

本文介绍了生产具有自主知识产权的大尺寸激光动感像素全息的设备及配套工艺.可用于生产防伪塑料薄膜,纸和其他包装材料.我们成功地解决了全息行业宽幅模压生产所需的大幅面整版制版技术问题,弥补了因小单元图案拼版而引起的干涉条纹失真,转移效率低,拼缝等缺陷,也解决了宽幅母版制作及包装用大幅面图案制作中的实用化工艺.     

激光头主板用FPC关键材料研究

FPC有广阔的发展及应用空间,对FPC的的卷曲、弯折以及温度和湿度载荷下的疲劳可靠性也有了更高的要求。本文通过对激光头主板用FPC关键材料的实验研究,通过对比实验选择出了提高激光头主板FPC电路的弯折性的FPC材料,其产品电路的弯折达1000万次,达到国内的先进水平。     

Comparison of dicarboxylic acids as complexing agents for abrasive-free chemical mechanical planarization of copper

Abrasive particles used in chemical mechanical planarization (CMP) of copper often agglomerate and cause scratches on the finished surface. Abrasive-free CMP offers a feasible solution to this problem, and our present work examines four dicarboxylic acids (oxalic, malonic, succinic and glutaric, with increasing carbon chain lengths) as possible complexing agents for such a chemically dominated CMP process. At pH 3.0-4.0, oxalic and malonic acids are most effective for abrasive-free Cu removal. The rates of Cu dissolution and polish (with or without abrasives) are correlated with pH dependent distributions of mono-anionic (for oxalic and malonic) and neutral (for succinic and glutaric) acid species. The surface morphologies of a Cu wafers obtained by abrasive-free CMP in these acids also are more defect free and flat compared to those obtained using abrasives.     

应用于暂时粘结、基片保护和MOEMS封装的新型材料

随着微电子制造商持续缩小晶体管基极和其他元件的尺寸,集成电路的密度不断增大,电路连接工艺中开始使用低k介电质和铜导电体。为了进一步提高电路整体性能与射电频率性能、缩小体积、降低电源损耗、提高散热效率,承载电路的基片的厚度正在持续变薄。常规的工艺已经无法加工先进的超薄基片。为了解决这个工艺中的难题,BrewerScience利用自己先进的材料、工艺、机械设备的研究开发水平,正在开发一套崭新的超薄基片的加工操作流程。介绍用于将超薄基片暂时粘结到另一载体的系列材料和流程,完成加工以后,基片和载体可以很容易地分离。另外,对用于保护基片的新型涂料也进行了介绍。在对基片进行薄化和切割的时候,这种涂料可以对基片提供有效的保护。最后,介绍了高透明高折射材料,这些材料用在高亮度发光二极管(HB-LED)和微光电机械系统(MOEMS)中,可以降低由封装引起的光损耗。     

909工程超大规模集成电路厂房高纯气体管道的应用

简述909工程高纯气体管道系统设计中气体管道材料的选用,及设计对管道的施工安装,试压及验收的要求。     

Role of dual SiOx: H based buffer at the p/i interface on the performance of single junction microcrystalline solar cells

In p-i-n structure a-Si solar cell a buffer layer with proper characteristics plays important role in improving the p/i interface of the cell, reducing mismatch of band gaps and number of recombination centres. However for p-i-n structure microcrystalline ( µc-Si: H) cell which has much less light induced degradation than a-Si:H cell, not much work has been done on development of proper buffer layer and its application to µc-Si:H cell. In this paper we have reported the development of two intrinsic oxide based microcrystalline layer having different characteristics for use as buffer layers at the p/i interface of µc-Si:H cell. Previously SiO_x:H buffer layer has been used at the p/i interface which showed positive effects. To explore the possibility of improving the performance of p-i-n structure µc-Si:H cell further we have thought it interesting to use two buffer layers with different characteristics at the p/i interface. The two buffer layers have been characterized in detail and applied at the p/i interface of the µc-Si:H cell with positive effects on all the PV parameters mainly improves the open circuit voltage (V_oc) and enhances short circuit current (I_sc). The maximum initial efficiency obtained is 8.97% with dual buffer which is 6.7% higher than that obtained by using conventional single buffer layer at the p/i interface. Stabilized efficiency of the cell with dual buffer is found to be ~9.5% higher than that with single buffer after 600 h of light soakings.     

慢波组件散热性能研究的发展现状

综合叙述了目前人们为提高螺旋线行波管慢波组件的散热性能而在装配方法、组件材料以及夹持杆的结构这三方面所进行的研究。     

强化耐高频噪声的挠性板

概述了强化高频耐噪音的挠性板(FPC)及其制造工艺。     

月表温度变化下电缆装联材料性能影响分析

在探月任务中,由于月球表面温度变化非常大,探测器上的电缆需要经历高温达125℃,低温达-180℃的严酷极限温度条件,因此电缆装联所用的电连接器、热缩套管、灌封胶等材料是否能经受住如此严酷的温度是一个疑问。为此开展了高低温下电缆用材料的特性变化试验,并对出现的问题进行了分析,得出了可适用于深空探测的合适的材料。试验结果如下:(1)airborn微小型电连接器在125℃高温下绝缘性能显著下降,国产J30JH微小型连接器高温绝缘性能较稳定;(2)125℃高温下国产RSG热缩套管发生熔化并粘连;(3)高低温循环作用下,采用ATUM套管加热缩带或纯热缩带的方式可保证尾罩处理满足使用要求。     

纳米银材料的化学制备及其在PCB中的应用

主要介绍了纳米银材料的不同制备方法和表征方法,总结了不同合成条件对纳米银形貌的影响。有化学还原法、光化学还原法、银材料具有不同的光、电、磁和催化性能,出纳米银材料除了用于导电油墨的开发外,成本。电化学还原法和置换法。不同结构的纳米在PCB生产上具有极好的应用前景,特别指作为催化剂代替金属Pd能够有效降低生产成本。