Improvement of the optical properties of electrodeposited CuInSe2 thin films by thermal and chemical treatments

Cu, In and Se have been codeposited in thin films by potentiostatic one-step electrodeposition. The as-deposited material has shown direct optical transitions attributable to the CuInSe₂ semiconductor, but also additional absorption corresponding to another semimetallic phase. The secondary phases are selenium and copper selenide compounds which have been determined by composition measurements. In order to eliminate the semimetallic phases and to improve the semiconductor behaviour of the electrodeposited material, thermal and chemical treatments have been performed. After heat-treatment of the samples at 400°C in flowing argon, elemental selenium loss has been detected together with an enhancement of the allowed direct optical transition. The subsequent chemical etching of the layers in a KCN solution has showed to be successful in eliminating the copper selenide phases which were responsible of the remaining sub-bandgap absorption.     

Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy

The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi₂ is confirmed by the surface peak analysis. Initially, FeSi₂ grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure.     

A Ray-Tracing Analysis of ICRH in Tokamaks

Power deposition profiles generated by Ion Cyclotron Resonance Heating （ICRH） in non-circular tokamaks are studied using a ray-tracing technique. The simulation results for the Experimental Advanced Superconductor Tokamak （EAST） D-shaped plasma are presented. It is indicated that the spatial distributions of plasma parameters （plasma density, species temperature, minority ion concentration, etc.） have an significant influence on the power deposition profiles. The findings may be highly useful to the planned plasma heating and experiments in EAST.     

Analysis of trace mercury in water by solid phase extraction using dithizone modified nanometer titanium dioxide and cold vapor atomic absorption spectrometry

A new method for analysis of trace mercury in water samples was developed, based on the combination of preconcentration/separation using dithizone-modified nanometer titanium dioxide (TiO2) as a solid phase extractant and determination by cold vapor atomic adsorption spectrometry (CVAAS). Dithizone was dissolved with alcohol and loaded on the surface of nano-sized TiO2 powders by stirring. The static adsorption behavior of Hg2 on the dithizone-modified nanoparticles was investigated in detail. It was found that excellent adsorption ratio for Hg2 could be obtained in the pH range of 7-8 with an oscillation time of 15 min, and a 5 mL of 3.5 mol·L-1 HCl solution could quantitatively elute Hg2 from nanometer TiO2 powder. Common coexisting ions caused no obvious influence on the determination of mercury. The mechanisms for the adsorption and desorption were discussed. The detection limit (3σ) for Hg2 was calculated to be 5 ng·L-1. The proposed method was applied to the determination of Hg2 in a mineral water sample and a Zhujiang River water sample. By the standard addition method, the average recoveries were found to be 94.4%-108.3% with RSD (n = 5) of 2.9%-3.5%.     

中频反应溅射SiO2膜与直流溅射ITO膜的在线联镀

多数ITO透明导电玻璃生产线在实现SiO2膜与ITO膜在线联镀时，应用SiO2靶射频溅射沉积SiO2膜工艺和ITO靶直流溅射沉积ITO膜工艺，如果SiO2膜应用硅靶反应磁控溅射工艺，存在这种工艺是否可以与ITO靶直流溅射沉积ITO膜工艺在线联用以及如何实现联用的问题。作者对现有的生产线进行了改造设计、加工，做了大量实验、质谱分析和多项测试研究，成功地实现反应溅射SiO2膜与ITO膜在线联镀，做到SiO2镀膜室的工作状态的变化基本上不影响ITO镀膜室的工艺条件。     

计算机软件在多媒体化学教育中的应用

本文阐述了计算机软件在多媒体化学课件开发中的应用，着重介绍了一些普通软件及专业化学软件的特点及功能。     

Hybrid gas-to-particle conversion and chemical vapor deposition for the production of porous alumina films

Porous alumina films can be found in a wide variety of materials, including filters, thermal insulation components, dielectrics, biomedical and catalyst supports, coatings and adsorbents. Production methods for these films are as equally diverse as their applications. In this work, a hybrid process based upon chemical vapor deposition and gas-to-particle conversion is presented as an alternative technique for producing porous alumina films, with the main advantages of solvent-free, low substrate-temperature operation. In this process, nanoparticles were produced in the vapor phase by reaction of aluminum acetylacetonate in the presence of oxygen. Downstream of this reaction zone, these nanoparticles were collected via thermophoresis onto a cooled substrate, forming a porous film. Some deposited films were subjected to post-processing in the form of annealing in air. Fourier-transform infrared spectra and X-ray energy-dispersive spectroscopy analysis confirmed the production of alumina at processing temperatures above 973 K. X-Ray diffraction revealed that the films were amorphous. Film thickness, ranging from 30 to 250 μm, and the average deposition rate were determined from scanning electron microscopy results. From transmission electron microscopy, the average primary particle size was determined to be approximately 18 nm and the formation of nanoparticle aggregates was evident. Annealing of the films at temperatures ranging from 523 to 1173 K in the presence of air did not have an effect on particle size. The specific surface area of the powder composing the films ranged from 10 to 185 m² g⁻¹, as determined from nitrogen gas adsorption by the Brunauer–Emmett–Teller method.     

Micro-RBS characterisation of the chemical composition and particulate deposition on pulsed laser deposited Si1−xGex thin films

The formation and deposition of particulates by pulsed laser deposition of Si_1−xGe_x semiconductor alloy thin films are discussed. Using Rutherford backscattering spectrometry with micrometer lateral resolution (micro-RBS) the film composition was measured with high accuracy, even in the presence of particulates with a high areal density of 20,000–30,000 particulates per mm². We show that on impact of a particulate, the part of the thin film which is already deposited probably melts and its Ge content segregates to the surface.     

New Engineered Particles from Spray Dryers: Research Needs in Spray Drying

This article reviews developments in the simulations of spray dryer behavior, including the challenges in modeling the complex flow patterns inside the equipment, which are often highly transient and three-dimensional in nature. There appears to be considerable scope for using CFD simulations for investigating methods to reduce the rates of wall deposition and of thermal degradation for particles by modifying the air flow patterns in the chamber through small changes in the air inlet geometry. Challenges include building particle drying kinetics and reaction processes, as well as agglomeration behavior, into these simulations. The numerical simulations should be valuable supplements to pilot-scale testing, enabling more extensive and accurate optimization to be carried out than hitherto possible. New understanding of reaction processes and materials science, in combination with recent knowledge of the application of CFD to these problems, may enable new engineered powder products to be developed from the one-step spray-drying process.