高性能纤维表面处理技术

玻璃纤维、碳纤维、芳纶纤维、高分子量聚乙烯纤维等高性能纤维为满足成型加工、制作高强复合材料的要求,需要进行表面处理,该文阐述了这方面的技术及研究成果。     

基于Stacking框架的蓝莓硬度预测可溶性固形物含量及维生素C模型构建

目的 探索了一种基于蓝莓的质量、硬度快速、无损预测它的可溶性固形物与维生素C含量的方法,为蓝莓化学成分的预测提供一种新思路。方法 通过对蓝莓质量、硬度与可溶性固形物（soluble solid content, SSC）含量、维生素C（vitamin c, VC）相关性分析后,建立了基于一维特征的质量和硬度预测SSC与VC模型。其次,对硬度添加多项式特征做升维处理,同一维进行相同研究。最后,对比Stacking框架与单一模型,及添加多项式特征的预测效果。结果 一维特征条件下,基于Stacking框架的硬度预测SSC与VC的R2分别为0.873、0.875,预测效果优于质量与单模型预测;多维特征条件下,硬度添加到3次方时预测SSC效果最佳,R2为0.889,添加到12次方时预测VC含量效果最佳,R2为0.890,预测效果均好于一维特征。结论 Stacking框架结合添加多项式特征在蓝莓硬度快速、无损预测它的SSC及VC方面具有良好的潜力,为蓝莓品质检测提供新途径。     

Structural and optical characterization of CuInSe2 films deposited by hot wall vacuum evaporation method

Copper indium diselenide (CuInSe₂) compound was prepared by direct reaction of high-purity elemental copper, indium and selenium. CuInSe₂ thin films were deposited onto well-cleaned glass substrates by a hot wall deposition technique using quartz tubes of different lengths (0.05, 0.07, 0.09, 0.11 and 0.13 m). X-ray diffraction studies revealed that all the deposited films are polycrystalline in nature and exhibit chalcopyrite structure. The crystallites were found to have a preferred orientation along the (1 1 2) direction. Micro-structural parameters of the films such as grain size, dislocation density, tetragonal distortion and strain have been determined. The grain sizes in the films were in the range of 65-250 nm. As the tube length increases up to 0.11 m the grain size in the deposited films increases, but the strain decreases. The film deposited using the 0.13 m long tube has smaller grain size and more strain. CuInSe₂ thin films coated using a tube length of 0.11 m were found to be highly crystalline when compared to the films coated using other tube lengths; it has also been found that films possess the same composition (Cu/In=1.015) as that of the bulk. Scanning electron microscope analysis indicates that the films are polycrystalline in nature. Structural parameters of CuInSe₂ thin films deposited under higher substrate temperatures were also studied and the results are discussed. The optical absorption coefficient of CuInSe₂ thin films has been estimated as 10⁴ cm⁻¹ (around 1050 nm). The direct band gap of CuInSe₂ thin films was also determined to be between 1.018 and 0.998 eV.     

氮化硼薄膜的脉冲激光沉积

用Ｑ开关ＹＡＧ激光器的１．０６μｍ的脉冲激光在硅及玻璃衬底上沉积了氮化硼薄膜。做了ＳＥＭ，ＸＲＤ，红外透射谱和紫外一可见透射谱等测试。确认为六方氮化硼（ｈ－ＢＮ）薄膜．并测出其禁带宽度、晶格常数等。     

Characteristics of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epilayer

Dislocation “half-loop arrays” (HLAs) in 4H-SiC homo-epilayers are studied by molten KOH etching and atomic force microscopy (AFM). It is found that the dislocation half-loops in an array exist at different depths in the epilayer, and they are aligned roughly but not exactly perpendicular to the off-cut direction. These results indicate that the dislocation half-loops in an array are not formed simultaneously, but the array extends by generation of new half-loops during growth. It is also demonstrated that the HLAs can be artificially induced by creating strain in the material, followed by annealing.     

Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD

By monitoring the cyclic behavior of surface photoabsorption (SPA) reflectance changes during the growth of GaAs at 650°C and with sufficient H₂ purging time between the supply of trimethylgallium and AsH₃, we have been able to achieve controlled growth of GaAs down to a monolayer. Our results show, as confirmed by photoluminescence (PL) measurements, the possibility of growing highly accurate quantum well heterostructures by metalorganic chemical vapor deposition at conventional growth temperatures. We also present our PL measurements on the InGaAs single quantum wells grown at this temperature by monitoring the SPA signal.     

石榴的化学成分与药理活性

介绍了石榴的化学成分与活性物质,并对石榴的药理活性及其在人体中的作用进行了概述。     

库尔勒香梨表皮蜡质化学组分的变化与其贮藏品质的关系

以库尔勒香梨为实验材料,研究其在常温和冷藏过程中表皮蜡质含量和主要化学组分的变化及其与贮藏品 质的关系。通过气相色谱-质谱联用技术分析蜡质主要成分的变化,并测定贮藏期间果实质量损失率、腐烂率、硬 度、可溶性固形物质量分数、可滴定酸质量分数与总酚质量浓度等与贮藏品质相关的指标,将蜡质含量、主要组分与 贮藏品质进行相关性分析。结果表明：与常温贮藏相比,采后冷藏抑制了库尔勒香梨贮藏前期蜡质含量的增加和后期 的减少;常温和低温贮藏期间,烷烃、脂肪酸和烯烃相对含量较高,醇、醛和酯类物质次之,随着贮藏时间的延长, 烷烃相对含量先增加后减少,脂肪酸与烯烃相对含量逐渐增加,而醇、醛和对照组酯类相对含量均呈下降趋势,但冷 藏明显抑制了蜡质中脂肪酸、烯烃和贮藏前期烷烃相对含量的增加,以及醛类和贮藏后期烷烃相对含量的下降,且对 醇和酯类物质抑制效果不明显;常温和冷藏组蜡质含量、烯烃和脂肪酸含量均与质量损失率、腐烂率、硬度、可溶性 固形物和可滴定酸质量分数极显著相关（P＜0.01）,蜡质含量与总酚质量浓度极显著相关（P＜0.01）。常温组酯类 相对含量与各指标均无显著相关性,而冷藏组酯类含量与各指标均显著或极显著相关（P＜0.05,P＜0.01）。     

石化用高压阀门阀体和阀盖连接形式的研究

分析了高压阀门阀体和阀盖的连接形式及其相关标准的规定。提出了石油化工用阀门阀体和阀盖采用压力自紧密封结构连接形式应注意的问题和避免阀门泄漏的辅助措施。     

n沟增强型InP MISFET研究

在掺Fe的<100>晶向半绝缘 InP上,用 TEOS为源的 PECVD SiO_2作为栅氧化层,以Si~+注入 S.I.InP形成源、漏区,研制成基于 InP/SiO_2界面的n沟增强型 InP MISFET.其饱和区跨导 g_m为6.4mS/mm,沟道有效电子迁移率 μ_(eff)为1400cm~2/V·S,并对 InP MISFET特性及漏电流慢漂移行为作了讨论与分析.