真丝纤维氢气等离子体金属化

研究了应用低压氢气等离子体对真丝纤维进行金属化处理。讨论各种实验条件对试样电阻的影响,以及试样的耐洗牢度、热牢度、处理前后纤维的表面形态变化等。结果表明,用氢气等离子体还原处理,能够获得具有适当导电性的镀银膜真丝纤维。     

一种理想的金属化膜分切设备

简要介绍了金属化膜分切设备研发的市场需求、技术关键、主要技术指标以及与先进技术水平的比较,通过对其使用情况的调查和了解,分析了该项目所产生的经济和社会效益,可望对电容器有机材料行业的发展起到一定的促进作用。     

生物分子模板法制备低维金属纳米材料研究进展（Ⅱ）

本文概述了蛋白质、DNA等生物分子模板表面化学沉积制备低维金属纳米材料的最新研究进展。蛋白质可自组装形成不同层次的纳米结构,而DNA分子可自组装形成纳米线和网状结构。这些不同的纳米结构可作为模板,化学沉积,制备金属纳米管、纳米线等一维或二维纳米材料。金属纳米管和纳米线具有导电、导热、磁性和具有特殊的量子效应,在电磁活性复合材料,可控缓释系统、纳米器件和纳米电路等领域有重要的应用前景。     

真空电子器件外壳关键工艺

针对电真空器件外壳在制备过程中的关键工艺以及技术难点展开讨论,分别论述了瓷件平整度,封接强度,钎焊技术与保护电镀技术这四个方面各自的重要性与影响因素,结合作者实践经验分别提出相应的解决措施,并取得良好的效果。     

针织腈纶织物化学镀铜的研究

用化学镀的方法在针织腈纶织物表面镀覆一层金属铜.通过正交实验法探讨了施镀条件(活化物浓度、反应温度、反应时间和镀液浓度)对镀层的影响,得最优条件为活化液的浓度0.003 77 mol/L,反应温度55℃,反应时间1 h,甲乙组分溶液体积比3:1;测试了织物化学镀铜前后导电性能、耐磨性和耐洗性.结果表明:镀铜导电织物具有良好的导电性、耐磨性和耐洗性.     

新型功率混合集成电路材料—氮化铝（A1N）

本文主要介绍了A1N的成瓷工艺,金属化方法,特性及在新型电子器件中的应用示例,A1N在功率电子领域有限取代BeO,成为本世纪大量应用的主导电子材料。     

Thin film interaction between low-k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer

The interaction between low-k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer has been studied using four-point-probe sheet resistance measurement, X-ray diffraction, conventional Rutherford backscattering spectrometry (RBS), nuclear resonance analysis (NRA), elastic recoil detection (ERD), secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES) and thermal desorption spectroscopy (TDS). The conventional intermetal dielectrics SiO₂ and plasma-enhanced tetraethylorthosilicate (PETEOS) have been studied also for the purpose of comparison with HSQ. In the low temperature regime (300–550°C), a considerable amount of oxygen atoms, from various sources, diffuses into Ti film to form a Ti(O) solid solution, raising the resistivity of Ti significantly and causing the expansion of the Ti lattice. A good correlation between the oxygen composition in the Ti film, the sheet resistance variation of Ti and the change of Ti lattice parameter C₀ have been observed. At the same temperature, there are more oxygen atoms incorporated into the Ti film in Ti/HSQ than those for Ti/PETEOS, suggesting that additional HSQ-related oxygen sources, such as the moisture uptake and the conversion reaction of HSQ, may be attributed to this. In the high temperature regime (550–700°C), HSQ reacts with Ti to form a final TiO/Ti₅Si₃/HSQ stack structure. It is assumed that a few competing reactions occur in this regime. At 550–650°C, HSQ reacts directly with Ti; in the meantime, part of HSQ undergoes conversion reactions, with the reaction products SiO₂ and SiH₄ reacting with Ti to form Ti silicide. At 650–700°C, HSQ is almost completely converted into SiO₂, so the dominant mechanism is Ti reaction with SiO₂. Before HSQ is completely turned into SiO₂, the Ti/HSQ system is more reactive than both Ti/PETEOS and Ti/SiO₂. The initiating temperature for the Ti/HSQ reaction exhibits no obvious Ti thickness dependence.     

铁氧体金属化技术在微波介质器件中的应用

提出一种铁氧体金属化方法,解决了微波介质器件中铁氧体容易脱落的问题,为微波介质器件的发展开辟了一个新的方向。     

相图--解释金属化层稳定性和薄膜反应的热力学方法

介绍了计算相图的起因与发展 ,综述了利用 Gibbs生成自由能数据绘制简化的三元、四元相图的热力学方法 ,尤其是确定相图中直达连线的思想方法 ,最后给出了利用相图来解释金属化层稳定性和薄膜反应的应用实例。     

回流加固结构金属化系统的可靠性测试

结合器件具体结构和工艺,在回流效应理论和实验研究的基础上优化设计了回流加固结构。产一套和地回流加固结构样管进行了电热加速应力试验,考核了不同结构的加固效果及抗热电迁徒性能,优选了最佳回流结构。