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31.
用保角变换法对共面波导金属厚度效应进行了理论分析,编制了相应的计算机程序,给出了数值解,并对此进行了多元曲线拟合,导出了考虑金属厚度后的形状比k、有效介电常数、特征阻抗、损耗的闭定表达式。用此修正表达式求得特征阻抗及损耗的数值解,并与K.C.格普塔的修正值及实验测量值进行了详细比较,结果表明此修正公式与实验值相符较好。 相似文献
32.
本文叙述了碳纤维复合材料金属化的方法,测试了金属化和未金属化碳纤维复合材料对x波段电磁波的反射特性,说明了碳纤维复合材料无需金属化就可以满足X波段反射特性的要求. 相似文献
33.
Kuebler and co‐workers report on p. 1739 a method for preparing conductive and optically reflective silver‐coated polymeric microstructures having virtually any 3D form. Shown are reflection images of a silvered five‐layer simple‐cubic lattice having a period of 2.4 μm (background) and a macroscopic silvered polymer film (inset). To prepare metallopolymeric microstructures, 3D polymeric scaffolds are first created by multiphoton direct laser writing, then functionalized with gold particles, and metallized using nucleated electroless silver deposition. A method is reported for fabricating complex 3D silver‐coated polymeric microstructures. The approach is based on the creation of a crosslinked polymeric microscaffold via patterned multiphoton‐initiated polymerization followed by surface‐nucleated electroless deposition of silver. The conductivity and reflectivity of the resulting silver–polymer composites and the nanoscale morphology of the deposited silver are characterized. Sub‐micrometer thick layers of silver can be controllably deposited onto surfaces, including those of 3D microporous forms without occluding the interior of the structure. The approach is general for silver coating crosslinked polymeric structures based on acrylate, methacrylate, and epoxide resins and provides a new path to complex 3D micrometer‐scale devices with electronic, photonic, and electromechanical function. 相似文献
34.
通过COREX炼铁工艺考察,经与高炉流程比较,认为COREX炉设计关键是COREX工艺的先进性和高炉成熟技术的有机结合;生产关键是还原炉稳定生产金属化率高达93%的海绵铁。 相似文献
35.
36.
Thin Cu metal layers were deposited on semicrystalline poly(ethylene terephthalate) PET films by thermal evaporation. RBS measurements revealed that, under our metallization conditions, the Cu layers are buried into the polymer bulk. This has also been confirmed by ToF-SIMS measurements which reveal that some PET remain at the top surface. Since the formation of a diffuse interface has important consequences on the adhesive properties, the Cu diffusion was investigated systematically by means of RBS. After metallization, the samples were annealed under vacuum for times varying between 0 and 120 hours at 80, 90, 100, 120 and 140°C, slightly above the glass transition of the PET (67°C). Since the diffusion profiles exhibit a behavior in accordance with Fick's laws, the diffusion coefficients were evaluted. The results are in agreement with a diffusion model based on the Brownian motion of particles in a viscous fluid. 相似文献
37.
M.I. Sayyed Y. Al-Hadeethi Maha M. AlShammari Moustafa Ahmed Saleh H. Al-Heniti Y.S. Rammah 《Ceramics International》2021,47(1):611-618
Herein, a traditional melt quenching method was utilized to synthesize glasses with a nominal chemical composition (80-x)TeO2-xB2O3–5ZnO–5Li2O3–10Bi2O3: 30≤ x ≤ 80 mol%). The produced sample was coded as TBBZL30 to TBBZL80. X-ray diffraction (XRD) has been employed to test the amorphous nature of the synthesized samples. In the range of 200–500 nm wavelength, UV–Vis spectra for the glasses have been performed. Optical energy gaps () have been determined based on the absorption measurements. With the help of (), refractive index (n), molar polarizability (αM), metallization criterion (MCri.), molar refractivity (RM), static dielectric constant (εSta.), optical dielectric constant (εOpt.), reflection loss (RL) and optical transmission (TOpt.) have been calculated. For the fabricated boro-tellurite glasses, Phy-X/PSD was used to report some shielding factors for several energies between 15 keV and 15 MeV. The maximum attenuation for all samples took place at 15 keV and the mass attenuation coefficient varied between 52.309 and 57.084 cm2/g. The linear attenuation coefficient (LAC) results demonstrated that TBBZL80 has the highest attenuation than the rest of samples which is due to high content of TeO2 (containing 80 mol% of TeO2) whereas TBBZL30 has the lowest attenuation. The LAC for the fabricated samples varied between 230.160 and 351.064 cm-1 at 15 keV. The minimum effective atomic number (EAN) occurred between 0.8 and 4 MeV and varied between 15.16 and 17.35 for TBBZL30 and 25.10–28.33 for TBBZL80. The addition of TeO2 was found to enhance the EAN and improved shielding properties for the tested TBBZL glass systems. 相似文献
38.
J. MorèreM.J. Tenorio M.J. TorralvoC. Pando J.A.R. RenuncioA. Cabañas 《The Journal of Supercritical Fluids》2011,56(2):213-222
Pd was deposited into mesoporous silica SBA-15 using supercritical CO2 (scCO2). Palladium hexafluoroacetylacetonate [Pd(hfac)2] was dissolved in scCO2 and impregnated into the support at very mild conditions, 40 °C and 85 bar. Then the organometallic precursor was reduced with H2 in the CO2 mixture or, after depressurization, in pure H2. Materials were characterized by TGA, XRD, TEM, SEM, EDX, ICP-OES and N2-adsorption experiments. Pd nanoparticles evenly distributed into the support (1-3 mol% Pd by ICP-OES) are only obtained when the reduction is performed in pure H2. Cluster size is limited in two dimensions by the pore size of the support but clusters grow larger with increasing impregnation time and turn into small nanowires. The catalytic activity of the Pd/SiO2 composite material was confirmed following the reduction of 4-nitrophenol to 4-aminophenol in water by UV-vis spectroscopy. 相似文献
39.
《Journal of Adhesion Science and Technology》2013,27(10):1179-1182
The ability of a cathodic arc vapor deposition technique, termed low-temperature arc vapor deposition (LTAVD), to metallize plastics at or above room temperature is reported. The coatings exhibit good adhesion strength. This is attributed to the high ion energies inherent to the LTAVD process. 相似文献
40.
《Ceramics International》2023,49(8):11875-11884
Aluminum nitride (AlN) are particularly suitable as integrated circuits (ICs) substrates due to its high thermal conductivity and excellent electricity insulation. However, its poor weldability with metals limits its usage. Recent research on surface metallization of AlN provides possible solutions to tackle this defect. Nevertheless, these solutions show some shortages such as complicated processes or insufficient electrical conductivity. In this paper, we report a method that consists of laser induced surface metallization and laser sintering of silver (Ag) coatings. A nanosecond laser was applied to induce a 10 μm thick aluminum (Al) layer from the AlN substrate. Afterwards, laser sintering of Ag layers was implemented, which could enhance the conductivity and the bonding performance between layers. With optimized laser parameters applied, both the electrical conductivity and the bonding tests demonstrated excellent physical properties. Finally, simulation and EDS analysis illustrated the melting evolution and confirmed a metallurgical combination of Al and Ag, thus enhancing bonding strength. Thanks to the small size of focused laser spot, electrical circuits width could be greatly narrowed if these findings were applied; hence highly dense ICs on AlN substrate become potentially available. 相似文献