湿氢对陶瓷金属化质量的影响

通过BTU金属化炉湿氢作用的研究,找到了95%Al2O3陶瓷金属化过程中釉层发黑的原因,提出了相应的解决方法。并分析了湿氢流量对金属化质量的影响,提出了提高金属化强度的工艺方案。     

金属化陶瓷表面黑点的探讨

利用扫描电镜和能谱仪对金属化后95瓷表面出现的黑点进行了定性和半定量分析。结果表明黑点主要有三类,并分别对其成因进行了探讨。     

Effect of gas environment on properties of particles prepared by spray pyrolysis of metal nitrates

Particles in different states of oxidation were prepared by spray pyrolyses of aqueous solutions of silver and copper nitrates under different gas environments: air, nitrogen or mixture gas of 10 vol%H₂-N₂, respectively. Silver nitrate was converted to phase-pure silver at temperatures below 500 °C whose densification and crystallization were completed around 500 °C, irrespective of the gas environment. On the other hand, phase-pure copper(II) oxide was formed from copper nitrate up to 1,000 °C with air, but below 800 °C with nitrogen, above which copper(I) oxide was produced. Phase-pure copper particles were obtained with the mixture gas at temperatures above 400 °C. Copper(I) oxide was sintered and crystallized more easily than copper(II) oxide. The rates of the metallization, sintering and crystallization of copper were between those of silver and nickel.     

氧化铝陶瓷的钨金属化研究

阐述了在真空炉中高温烧结W涂层的基本实验方法和工艺,采用的金相照片,扫描电镜和能谱分析等方法对镀层进行了微观的成分分析.结果显示金属化温度影响W粉的烧结,配方中的氧化钇在连接W和陶瓷基体中起到关键作用.     

氧化铝陶瓷金属化工艺的改进

针对影响氧化铝陶瓷活化钼锰法金属化的工艺因素，在配方、原料处理、涂敷方式、烧结等方面进行改进，提高工艺水平，保证质量稳定性、一致性。     

REMOTE PLASMA COPPER CVD WITH HYDROGEN AND OXYGEN ATOMS

Thin copper films have been deposited by the room temperature reaction of gaseous copper (II) hexa-fluoroacetylacetonate [Cu(hfa)₂] with hydrogen atoms produced in a remote discharge tube. The resulting films are conductive and adherent on a wide variety of substrates. Copper atoms have been observed and measured in the gas phase and were found by atomic absorption spectroscopy to have a maximum concentration of approximately 10¹¹ atoms/cc in the mixing/reaction zone. The reaction of Cu(hfa)₂ with oxygen atoms was also studied. The reaction again resulted in the deposition of a film and in addition a green chemiluminescent glow was observed which was identified as due to the gaseous diatomic CuF molecule. Copper atoms were also observed by absorption spectroscopy within this chemiluminescent reaction with oxygen atoms. The copper atom concentration was found to be approximately the same as that found with the H-atom reaction. The copper atom concentrations and the relative emission intensities of CuF were studied as a function of time and position to gain insight into the deposition process.     

微电子陶瓷封装的金属化技术

由于陶瓷具有优良的综合特性，被广泛用于高可靠性微电子封装，而多层陶瓷的金属化技术是微电子陶瓷封装的关键技术之一。本文介绍了多层陶瓷共烧工艺技术，开展了3种不同粒度的W粉与陶瓷的匹配烧结试验及金属化强度测试，首先通过W粉粒径分布测试，确定了3种试验w粉的粒度；其次进行了收缩率匹配实验，确定3号W粉与陶瓷A的匹配性最好，平均翘曲度为0．005，2号W粉与陶瓷B的匹配性最好，平均翘曲度为0．008；最后测试了金属化抗拉强度，3种粒度的W粉金属化层都能与陶瓷B形成好的结合强度。实验表明，合理的W粉粒度选择有利于提高金属化与陶瓷的匹配烧结质量及金属化的可靠性。     

金属化层表面状况的不同处理方法对陶瓷金属封接强度的影响

针对陶瓷金属封接,分别采取了打磨法和酸洗法两种不同的方法对陶瓷金属化层的表面状况进行处理,得到了两种不同的表面状态。利用划痕测试法,分析比较了两种方法制备试验件表面的电镀镍层的结合力情况。进行抗拉实验,研究比较了采用两种不同方法处理后的陶瓷抗拉试验件的封接强度。研究表明,酸洗法对金属化陶瓷表面的处理可以使金属化层得到更为良好的表面状态,是一种可以提高陶瓷金属封接强度的有效可行的方法。     

Optical properties of bismuth tellurite glasses doped with holmium oxide

The study of polarizability, optical basicity, and electric susceptibility carried out on the new and very rare set of bismuth - tellurite glasses doped with Ho³⁺ ions were fabricated by the conventional melt quenching process. The non-crystalline nature was confirmed by X-ray diffractometer measurements. Physical properties such as rare earth ion concentration, interionic distance, polaron radius, and average tellurium - tellurium separation were investigated by appropriate formulae. By UV absorption spectra, optical properties of Ho³⁺ ions doped glasses were found in the wavelength limit from 400 to 700 nm. The optical properties like optical dielectric constant, electronic polarizability, metallization criterion, electronegativity, optical basicity, and electric susceptibility were measured with appropriate mathematical relations. The impact of Ho³⁺ ions on nonlinearity in optical parameters discloses bismuth tellurite glass as a new applicant for holmium doped fiber amplifier applications.