用于各向同性湿法刻蚀中的氮化硅掩膜

在硅的各向同性湿法刻蚀过程中,一般选用HNA溶液(即氢氟酸、硝酸和乙酸的混合溶液)作为刻蚀液,而氮化硅以其很好的耐刻蚀性而优先被选为顶层掩膜材料.在硅片上刻蚀不同的结构,通常需要选择不同的刻蚀液配比.而不同配比对于氮化硅掩膜的刻蚀速率也不一样.分别用PECVD和LPCVD两种方法在<111>型硅片上沉积了厚度为560和210 nm的氮化硅薄膜,研究和对比了它们在8种典型配比刻蚀液下的刻蚀速率,为合理制作所需要厚度的氮化硅掩膜提供有益参考.     

光刻胶灰化技术用于同步辐射闪耀光栅制作

在分析光刻胶光栅浮雕图形缺陷成因的基础上,首次将光刻胶灰化工艺引入到全息－离子束刻蚀制作闪耀光栅工艺中,并成功地为国家同步辐射实验室光化学站制作了１２００１／ｍｍ,闪耀波长为１３０ｎｍ的锯齿槽形光栅。测试结果表明光刻胶灰化处理对制作大面积优质的光刻胶光栅非常有效和实用。     

前处理和侵蚀对阴极箔比容的影响

碱洗预处理和侵蚀条件对阴极铝箔比容有影响。随 Na OH浓度和 Na3PO4浓度的增大 ,侵蚀箔比容下降。碱洗的温度升高或者时间增加 ,侵蚀箔比容也下降。侵蚀溶液盐酸浓度为 0 .85 mol/ L 时侵蚀箔比容达到极大值。侵蚀液温度过低和过高 ,侵蚀箔比容都低。温度为 90℃时侵蚀比容较高。通过试验得出了较好的前处理和侵蚀条件。     

HF chemical etching of SiO2 on 4H and 6H SiC

Thickness and etch rate of SiO₂ films thermally grown on hexagonal SiC substrates were compared to results obtained from SiO₂/Si samples. The data confirm that profilometry and ellipsometry yield the same thickness values for oxides grown on Si and SiC. Within the accuracy of our measurements, oxides grown on different polytypes and faces of SiC etch at the same rate in a HF acid solution. The etch rate using a 50:1 H₂O:HF(50%) solution at room temperature is 0.1 nm/s and is uniform throughout the thickness of the SiO₂ films. The rate is the same as that obtained for SiO₂ grown on Si.     

蒙特卡罗法单晶硅的腐蚀工艺表面微观形态仿真研究

讨论了基于蒙特卡罗法模拟各向异性腐蚀加工的微观表面形态的仿真方法. 应用台阶流动模型,分析了(h,k,l)晶面中(h+2,h,h), (h,1,1), (h+2,h+2,h)以及(h,h,1)晶面族上反应活跃的台阶部位原子的排列特征,结合微掩模的作用和定义方法,提出了通过限制各晶面族台阶部位广泛存在的一级、二级邻居数为(3,7)原子移除概率的方法来模拟快速反应区域的吸附抑制现象. 把上述内容应用于RPF函数对(100)面的凸起结构,(110)面的带状条纹以及(111)面的三角形凹陷微观结构进行了仿真计算,解释了腐蚀中微观形貌的特征和成因. 算法在3种基础晶面和高指数 (322) 晶面的计算结果能够很好地符合实验中观察到的表面形态微观特征,验证了方法的有效性.     

Fabrication of a Superhydrophobic Surface from a Smectic Liquid‐Crystal Defect Array

A novel fabrication method is developed for the preparation of superhydrophobic surfaces. The procedure uses focal conic structures of semi‐fluorinated smectic liquid crystals (LCs) whose periodic toric focal conic domains (TFCDs) are prepared on a surface modified substrate. Reactive ion etching (RIE) on the periodic TFCD surface leads to a superhydrophobic surface with a water contact angle of ～160° and a sliding angle of ～2° for a 10 µL water droplet. The results show that this phenomenon is due to the development of a dual‐scale surface roughness arising from the nanoscale protuberance caused by applying the RIE process to the top of the microscale TFCD arrays. The unique surface behavior is further verified by demonstrating that RIE on a flat lamellar liquid crystal film, in which the director is aligned parallel with surface, results in a relatively low hydrophobicity as compared to when periodic TFCDs are subjected to REI. The observations made in this publication suggest that a new approach exists for selecting potential candidates of superhydrophic surface formation based on spontaneous self‐assembly in smectic liquid‐crystalline materials.     

A simple method for high yield fabrication of sharp silicon tips

A simple, high yield, method for the fabrication of sharp silicon tips is described. A triangular etch mask design is used to ensure that the tip forms with a single point. An anisotropic wet etch gives rise to a tip that continues to “self-sharpen” after the etch mask is released. The tip geometry comprises three converging {1 1 3} planes towards the apex with {3 1 3} planes forming at the base. The apex of each tip typically has a radius of curvature of <5 nm, which can be reduced to <2 nm by a subsequent oxide sharpening process. Tips of this kind have been successfully integrated into the fabrication of atomic force microscopy probes.     

生长气体流量对SiC单晶缺陷的影响

实现了熔融KOH进行SiC体单晶择优腐蚀估测缺陷密度的方法.本文报道了采用该技术对体SiC单晶缺陷密度估测的结果.腐蚀会在Si面形成六边形腐蚀坑,在C面形成圆形腐蚀坑.腐蚀速率和蚀坑形状与SiC生长工艺有关.对在高生长气流量下用PVT工艺制备的SiC样品,其刃位错、螺位错与微管密度分别为2.82×105,94和38cm-2;对在低生长气流量下用PVT工艺制备的SiC样品,其上述缺陷密度分别为9.34×105,2和29cm-2.结果表明:随着生长气体流量的增加,由于避免了N2掺杂,刃位错密度下降.     

双功能弯曲光纤探针的制作

探针是所有扫描探针显微镜的关键部件。本文提出了一种采用普通单模光纤制作在原子力和光子扫描隧道组合显微镜(AF/PSTM)上使用的弯曲光纤探针的方法。通过合理的选择实验参数,经过热拉伸与化学腐蚀两个过程,得到弯曲部分的角度为110°~120°、锥角约60°~80°的弯曲光纤探针。经扫描电镜观察,光纤探针的尖端直径小于100nm。此种方法加工光纤探针的成品率约70%左右。