Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

铜蒸汽激光器双闸流管触发系统的研究

研制成用于钢蒸汽激光器的双间流管触发系统。用两个闸流管并联进行交替触发，总输入电功率达7．8kW。低功率运行时，激光器的效率为0．6％与单间流管激光器的效率一致。     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

A storage heat pump using an ‘ozone-friendly’ refrigerant

The paper describes the integration of a chemical and a vapour-compression heat pump for energy storage applications. The vapour-compression system is designed to operate using the UK cheap rate ‘Economy 7’ electricity tariff. The system is characterized thermodynamically using various refrigerant/absorbent pairs in the chemical storage circuit and an ozone-friendly refrigerant, R134a, in the vapour-compression circuit. Results indicate that the H₂O/Na₂S pair provides a high energy storage density and is the most suitable for use in this system. The paper also describes the design features of a domestic-sized version of this heat pump system. Air in the sunspace (conservatory) of a house was used as a heat source for the heat pump.     

Chemical States of Lanthanum in Carbonized La2O3-Mo Thermionic Cathode Materials

The chemical reaction between lanthanum oxide and molybdenum carbide was studied by thermodynamic calcu-lation, thermal analysis and in-situ X-ray Photoelectron Spectroscopy. The theoretical results show that at the environment allowing for the evaporation of lanthanum, such as in high vacuum, La2O3 in the La2O3-Mo materials can be reduced to metallic lanthanum by molybdenum carbide (Mo2C). To confirm the conclusion, many analysis methods such as XRD, SPS, and TG-DTA were taken. The experimental results show that the chemical state of lanthanum changes during heat-ing. It was proved, for the first time, that reacted metallic lanthanum appears at the surface of this kind of material at high temperature.     

Silver Electrodeposition from Photographic Processing Solutions

This paper describes the parameters that are important in the industrial practice of silver removal from photographic fixers. The experiments were performed under potentiostatic control using synthetic solutions. The current efficiency was analysed as a function of the cathodic potential taking into account the deposit quality. A cathodic potential of ?0.5 V against a saturated calomel electrode is recommended. The conditions to prevent the darkening of the electrodeposit were investigated. The determination of silver concentration in the solution was made by direct potentiometry. The results obtained with synthetic fixers were corroborated by making the silver deposition from commercial fixers in an electrochemical reactor with rotating cylinder electrode intercalated in an electrolytic flow circuit in order to simulate practical conditions.     

化工企业环境因素的评价

化工企业环境因素评价是建立环境管理体系的核心任务，化工企业生产过程的特点决定了其环境因素数量多、环境影响大、识别评价难、控制难度大。本文介绍了化工企业环境因素评价的技术方法和过程，可以为提高环境因素评价的科学性、客观性和充分性提供参考。     

石英晶体监控法镀制高精度光学薄膜

讨论了石英晶体监控法在光学薄膜镀制过程中的应用原理。通过与常规的光学监控法镀制的膜层相比较．证实了石英晶体监控法有助于提高光学薄膜的光学品质。试验表明所镀膜层的光学性能优异，在光通信和激光器等领域具有广阔的应用前景。     

SISAK快速化学分离装置的建立

SISAK(Short-lived Isotopes Studies by the AKUFVE technique)技术是目前使用最广泛的快速化学分离方法之一,主要应用在短寿命核素的分离和鉴别、超重元素的人工合成以及化学性质研究等方面的工作中.本文简单地叙述了SISAK技术的流程、原理和发展现状,介绍了自行建立的国内第一套基于SISAK技术的快速化学分离装置,并通过从裂变产物中分离短寿命核素这一实例验证了SISAK技术在快速化学分离中的优越性.