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41.
胍基聚合物的合成及抗菌性能   总被引:3,自引:0,他引:3  
采用熔融缩聚的方法合成了聚亚己基胍盐酸盐(PHGC)及聚亚己基双胍盐酸盐(PHBG)。应用气相渗透压法(VPO)及粘度法测定了其分子质量,应用元素分析,FT-IR,XPS分析了聚合物的化学组成,抗菌活性的研究结果表明所合成的胍基聚合物具有较强的而且广谱的抗菌性能。  相似文献   
42.
根据气相化学反应法 (CAD)制备超细粉的原理 ,从低品位氧化锌矿中采用火法冶金方法直接制备超细氧化锌粉 ,对所得氧化锌的粒度尺寸、微观结构和粒度分布进行测试 ;考察了冷却强度以及收集装置对超细氧化锌粒度及粒度分布的影响 ;讨论了氧化锌粉体团聚的原因及对策、试验条件对氧化锌尺寸的控制等  相似文献   
43.
As part of a study of the possible application of polymerisable Langmuir-Blodgett (LB) films as ultra-fine-line e-beam resists, an investigation of the variation of film structure of 22-tricosenoic acid with differing deposition conditions has been made. Unexpected effects with significant implications for deposition speed and resist sensitivity have been observed, and the new techniques for film characterisation developed during the investigation have resulted in a revised model of deposition explaining the observed independence of the disorder causing optical scattering and the macroscopic features observed by polarised microscopy.  相似文献   
44.
张甫权  李痒 《电子学报》1992,20(8):80-82
用长脉冲激光(脉冲宽度150μs,波长1.06μm)辐照高温烧结的YBa_2Cu_3O_(7-x)靶,在6Pa的氧气压强下,巳在(100)YSZ单晶衬底上原位生成YBa_2Cu_(?)O_(7-x)超导膜。衬底置于750℃的加热器上,衬底与靶之间的距离5cm,用该法制得的薄膜光亮坚实,正常态呈金属性,零电阻温度为84.7K。用XRD和SEM对薄膜进行了分析研究。  相似文献   
45.
脉冲激光沉积SrBi2Ta2O9铁电薄膜电容特性研究   总被引:2,自引:0,他引:2  
用PLD方法成功地制备了SBT铁电薄膜,并制作成Pt/SBT/Pt薄膜电容器。SBT薄膜的晶面取向以(008)和(115)为主。在5V电压下,极化反转,并且得到较饱和的电滞回线,剩余极化强度和矫顽电场分别为84μC/cm2和57kv/cm。IV特性测试显示两个对称的双稳峰,并得到零电压下,面积为314×104μm2,厚度为035μm的电容器,电容约为560pF,介电常数约为600。疲劳测试表明Pt/SBT/Pt具有优良的抗疲劳特性。  相似文献   
46.
Properties of Edible Films from Total Milk Protein   总被引:5,自引:0,他引:5  
The mechanical properties and water vapor permeability of edible films made from various total milk proteins (TMPs) were investigated. Two TMPs obtained from nonfat dry milk (NDM) by removing lactose and three TMPs obtained from a commercial source were studied. Lactose was extracted from NDM by ultrafiltration or suspension in ethanol followed by filtration. TMP concentrate obtained by ultrafiltration (UF) produced films with the lowest water vapor permeability (WVP) and the highest tensile strength at break. Commercial TMP concentrates produced films more ductile than those from the UF-TMP or retentate from ethanol extraction. Further research is needed to improve mechanical properties of UF-TMP films without increasing the WVP.  相似文献   
47.
Reviews the book, The chemically dependent: Phases of treatment and recovery edited by Barbara C. Wallace (see record 1992-98403-000). While this book is ambitious, interesting, educational, and useful, it is also disappointing, repetitious, and incomplete. Because it tries to accomplish so much, it may appear to have succeeded too little. This book is organized around, and explicative of, several basic ideas which might have been controversial if not heretical had this book been published ten years ago. Section I, purporting to link specific "phases of recovery" to particular forms and functions of treatment, will certainly be useful for novice clinicians but falls short of its overstated goals and is thereby disappointing. Section II is a collection of moderately redundant chapters describing the etiology and treatment of substance abusers from the viewpoints of psychoanalytic, psychodynamic, ego psychology, and object-relations theorists and therapists. Section III focuses on cognitive-behavioral, self-help, and relapse-prevention treatments. Section IV is quite uneven in quality of writing and applicability of content, and could have benefited from closer editorial scrutiny or selectivity. The final section focuses on special needs of particular subpopulations of substance abusers: African-Americans, prison inmates, HIV/AIDS patients, persons who are homeless, those who have been sexually and physically abused, and others. According to the reviewer this is not the best book on substance abuse treatment, but it does present some clinically useful ideas and it is worth reading. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
48.
Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×1016 cm−3 to 2.6×1018 cm−3. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.  相似文献   
49.
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process.  相似文献   
50.
Ultrafine (⩽ 150 nm) powders of spinels [MFe2O4 where M = Ni(II), Co(II) and Zn(II)]; rare-earth orthoferrites [RFeO3 where R = Sm, Nd and Gd], and rare-earth garnets [R3Fe3O12 where R = Sm, Nd and Gd] with good purity and chemical homogeneity were prepared through two new versatile chemical routes. The first route involved the coprecipitation of the desired metal nitrates from their aqueous solution, in presence of a water soluble polymer-polyvinyl alcohol (PVA), by triethyl ammonium carbonate solution. The other process involved complete evaporation of a mixture of optimum amounts of PVA and the desired aqueous metal nitrate solutions, with and without the addition of optimum amounts of urea when the mixture was evaporated to a pasty mass. In addition, detailed study on the reported potassium ferricyanide route was also carried out for the production of the rare-earth orthoferrite powders. The various precursor as well as the heat-treated mixed-oxide powders, prepared through each of the routes, were compared by the physical characterization studies involving thermal gravimetry and differential scanning calorimetry, infrared spectroscopy, X-ray powder diffraction, transmission electron microscopy, and room temperature magnetic measurements.  相似文献   
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