Computational study of transport processes in a single-screw extruder for non-newtonian chemically reactive materials

A numerical study of the transport phenomena arising in a single-screw extruder channel is carried out. A non-Newtonian fluid is considered, using a power law model for the variable viscosity. Chemical reaction kinetics are also included. Finite difference computations are carried out to solve the governing set of partial differential equations for the velocity, temperature and species concentration fields, over a wide range of governing parameters for the case of a tapered screw channel. The numerical treatment for this combined heat and mass transfer problem is outlined. A marching procedure in the down-channel direction is adopted and the validity of the scheme for practical problems discussed. For large viscous dissipation, the material heats up considerably due to the prevailing shear field, affecting the viscosity significantly, and results in large changes in the pressure development at the end of the channel. The rate of reaction controls the mass diffusion rate which in turn affects viscosity and the flow significantly. The dimensionless throughput,q _v , is one of the most important parameters in the numerical solution. The dimensionless pressure variation is very sensitive toq _v , and orders of magnitude changes are possible for small variations inq _v . Schemes for dealing with other important effects such as back flow, heat transfer by conduction in the barrel, and the effect of the die are also outlined. A list of symbols is given at the end of the paper This is publication No. F-10544-4-91 of the New Jersey Agricultural Experiment Station supported by State Funds and the Center for Advanced Food Technology (CAFT). The Center for Advanced Food Technology is a New Jersey Commission on Science and Technology Center. This work was also supported in part by the US Army Research Office.     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

Crystallographic orientation dependence of the growth rate for GaAs low pressure organometallic vapor phase epitaxy

The complete crystallographic orientation dependence of the growth rate for GaAs low pressure organometallic vapor phase epitaxy (LPOMVPE) is determined using a previously described semi-empirical model. A set of LPOMVPE growth rate polar diagrams is presented for reactor temperatures near 550°C as well as near 700°C. Also, the variation of the growth rate polar diagrams as a function of process variables is given. The experimental data utilized in the semiempirical model was attained using a typical horizontal reactor LPOMVPE system and typical LPOMVPE process parameters.     

溶胶－凝胶二氧化硅驻极体薄膜的物理化学改性

实验研究了由溶胶－凝胶法制备二氧化硅驻极体薄膜的工艺。用红外透射谱、扫描电子显微镜以及驻极体等温表面电位测量和热刺激放电等实验考察了热处理和化学表面修正两个关键工艺对溶胶－凝胶二氧化硅样品驻极体性能的影响。结果表明经过高温条件下一定时间的热处理和化学表面修正，可以制备出性能优良的驻极体薄膜     

Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction

Journal of Electronic Materials - Low pressure chemical vapor deposition (LPCVD) of tungsten (W) by SiH4 reduction of WF6 on Si(100) surfaces was studied in a single-wafer, cold-wall reactor over a...     

New mechanisms in photo-assisted MOVPE of II-VI semiconductors

The first detailed comparison has been made of the metalorganic vapor phase epitaxy growth rates of CdTe, ZnTe, and ZnSe, measured in situ with laser reflectometry. The comparison also includes the photo-assisted growth with visible radiation from an argon ion laser. Using a standard Group II precursor (DMCd or DMZn.TEN) partial pressure of 1.5 × 10⁻⁴ atm, VI/II ratio of 1 and DIPM (M = Te, Se) the maximum growth rates are in the region of 10 to 15 AU/ s. Decrease in growth rates of ZnTe at higher temperatures or higher laser powers have been attributed to the desorption from the substrate of unreacted Te precursor. The behavior of DTBSe is quite different from DIPSe for both pyrolytic and photo-assisted growth. The maximum growth rate is around 1 AU/ s with very little photo-enhancement, except at 300°C. Secondary ion mass spectroscopy analysis of hydrogen concentration in the ZnSe layers shows high concentrations, up to 5.9 × 10¹⁹ atoms cm⁻³ for DTBSe grown ZnSe under pyrolytic conditions. These results show that the growth kinetics play an important part in the incorporation of hydrogen and passivation of acceptor doped material.     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.     

专家系统在化工中的应用进展

本文综述了近年来专家系统在化工领域的应用状况，并指出今后的发展趋势。     

Use of chemical variation and predation as plant defenses byEncelia farinosa against a specialist herbivore

Larvae of the monophagous herbivore,Trirhabda geminata, selectively eat particular plants and plant parts of its natural host,Encelia farinosa. Measurements of leaf damage and larval positions on branches through time support this observation. Time-lapse movie photography revealed that larvae are sufficiently mobile to search most of a plant in a 48-hr period and that aggregations were the result of larval activity and not directly the result of oviposition. Experiments withT. geminata larvae on artificial diets containing a range of natural concentrations of chemical extracts fromE. farinosa leaves showed that the larvae grew significantly slower and had a lower overall survivorship at the high concentration. Combining the results of all choice tests, larvae appeared unable to distinguish between high- and low-concentration agar diets. Considered individually, larval preferences for natural production concentrations changed as the season progressed. Early-season larvae preferred low-concentration leaves, while late-season larvae preferred high-concentrations. Measurements of chemical and nitrogen content of leaves selected by larvae in the field confirmed this pattern. Percent parasitism in field-collected larvae increased with season as the larval population decreased. This combination of slowed growth and increasing parasitism and predation is a putative defense strategy ofEncelia farinosa to prevent adaptation by a specialist herbivore to the total range of compounds elaborated.     

埃及Ain Sukhna Ezz带钢厂的电弧炉

埃及Ain Sukhna Ezz带钢厂的电弧炉是达涅利公司建造的最大的电弧炉之一,由于可选用多种入炉原料,采用最优化熔炼和精炼方法,可在电弧炉上以转炉生产成本生产转炉优质钢种.