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41.
Mitsuo Miyazawa Hideki Kawazoe Mitsuro Hyakumachi 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》2003,78(6):620-625
The microbial transformation of l‐menthol ( 1 ) was investigated by using 12 isolates of soil‐borne plant pathogenic fungi, Rhizoctonia solani (AG‐1‐IA Rs24, Joichi‐2, RRG97‐1; AG‐1‐IB TR22, R147, 110.4; AG‐1‐IC F‐1, F‐4, P‐1; AG‐1‐ID RCP‐1, RCP‐3, and RCP‐7) as a biocatalyst. Rhizoctonia solani F‐1, F‐4 and P‐1 showed 89.7–99.9% yields of converted product from 1 , RCP‐1, RCP‐3, and RCP‐7 26.0–26.9% and the other isolates 0.1–12.0%. In the cases of F‐1, F‐4 and P‐1, substrate 1 was converted to (?)‐(1S,3R,4S,6S)‐6‐hydroxymenthol ( 2 ), (?)‐(1S,3R,4S)‐1‐hydroxymenthol ( 3 ) and (+)‐(1S,3R,4R,6S)‐6,8‐dihydroxymenthol ( 4 ), which was a new compound. Substrate 1 was converted to 2 and/or 3 by RRG97‐1, 110.4, RCP‐1, RCP‐3 and RCP‐7. The structures of the metabolic products were elucidated on the basis of their spectral data. In addition, metabolic pathways of the biotransformation of 1 by Rhizoctonia solani are discussed. Finally, from the main component analysis and the differences in the yields of converted product from 1 , the 12 isolates of Rhizoctonia solani were divided into three groups based on an analysis of the metabolites. Copyright © 2003 Society of Chemical Industry 相似文献
42.
43.
WCDMA作为第三代移动通信系统的主流标准,能够提供多种类型的多媒体服务。为了实现各种用户平面数据的传输,系统会提前通过控制平面对所需的无线资源进行分配。由于配置过程是通过接口之间发送控制平面应用协议消息来实现的,因此能否正确有效地对信令消息进行编解码成为保证系统稳定工作的关键因素。3GPP标准中,ASN.1语言被用来描述接口信令消息。首先简要介绍了WCDMA系统结构以及主要接口协议,重点描述了ASN.1存在的意义及其编解码规则,最后给出了基于ASN.1的开发环境下应用层网络协议的开发流程。 相似文献
44.
H. L. Du S. R. Rose Z. D. Xiang P. K. Datta X. Y. Li 《Materialwissenschaft und Werkstofftechnik》2003,34(4):421-426
The oxidation/sulphidation behaviour of a Ti‐46.7Al‐1.9W‐0.5Si alloy with a TiAl3 diffusion coating was studied in an environment of H2/H2S/H2O at 850oC. The kinetic results demonstrate that the TiAl3 coating significantly increased the high temperature corrosion resistance of Ti‐46.7Al‐1.9W‐0.5Si. The SEM, EDX, XRD and TEM analysis reveals that the formation of an Al2O3 scale on the surface of the TiAl3‐coated sample was responsible for the enhancement of the corroison resistance. The Ti‐46.7Al‐1.9W‐0.5Si alloy was also modified by Nb ion implantation. The Nb ion implanted and as received sampels were subjected to cyclic oxidation in an open air at 800oC. The Nb ion implantation not only increased the oxidation resistance but also substantially improved the adhesion of scale to the substrate. 相似文献
45.
This article presents a method that can be applied to molten AA-6101 alloy to improve electrical properties of the aluminium part of the optical ground wire (OPGW) used in overhead transmission lines to protect phase conductors from lightning strike and to transmit signals and data. AA-6101 alloy in casting of the log as 6 m length and 178 mm diameter for extrusion has been inoculated by AlB2 to decrease detrimental effects of Cr, Ti, V, and Zr on the conductivity of the material. After inoculation, improved billets were extruded as 9.5 mm diameter feedstock. Required wires drawn from the feedstock according to the construction types of OPGW to be tested were exposed to aging at 175°C, 6 h (T-8). Upon completion of the back-twist and performing-type stranding process, resistance, and short-circuit current capacity and breaking load of the OPGW 88/44 constructions with other metal combinations have been examined and tested to show improvement. Results are summarized in tables and graphically. 相似文献
46.
47.
Si3N4 ceramic was jointed to itself using a filler alloy of Cu76.5Pd8.5Ti15, and the mechanical properties of the jointwere measured and analyzed. By using a filler alloy of Cu76.5Pd8.5Ti15, the SisN4/SisN4 joints were obtained bybrazing at 1373~1473 K f 相似文献
48.
业务支撑系统作为3G运营的重要组成,它的建设情况直接决定了电信运营商今后3G运营的成败,文章简单介绍了如何构建面向3G时代的业务支撑系统,对建设今后的业务支撑系统提供建议。 相似文献
49.
50.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献