激光深熔焊焊缝的熔透性监测研究

随着激光焊接在国防工业中的应用越来越广泛，焊接质量的监测和控制逐步成为一项重要的研究内容，而焊缝的熔透性控制是其中最重要的参数之一，特别对于一些密封件而言。通过对伴随激光深熔焊接所存在的光致等离子体的蓝紫光信号相对强度的监测，以判断焊缝的熔透性。利用信号监测系统，在焊接时采集光致等离子体蓝紫光的强度作为原始分析信号，通过对数据的分析和处理，以及大量的实验结果与数据分析结果的对比，寻求信号与焊缝熔透性的关系。研究结果表明，焊缝的熔透性与光致等离子体光信号的累积强度有对应关系，当焊缝全部熔透时，光信号稳定性非常好，而一旦焊缝处于未熔透或熔透性差时，光信号会产生极大的波动。     

Otto结构表面等离子体波光调制器模拟计算

根据受抑全内反射(FTIR)光调制器的原型,结合金属表面受激所产生的表面等离子体波(SPW)与p偏振光共振并吸收光能量的性质,设计了Otto结构的SPW光调制器,通过改变Otto结构中空气间隙的大小或入射角的大小这两种方式对入射光进行调制。针对Cu,Al,Ag3种金属以及1.064μm和0.532μm两种波长激光的情况下进行了模拟计算。结果表明,改变入射角方式的调制效果更佳,0.5°的入射角改变所引起的反射率R的变化量可达0.9以上。     

微波印制板制作过程中应注意的问题

随着通信、电子、计算机等工业突飞猛进地发展,对印制板的要求也不断提高,传统的印制板已不能满足产品的需要。从而使新型的印制板——微波印制板的生产应用日益得到重视。本文针对微波印制板制造的特点,探讨微波印制板生产中应注意的一些问题。     

纳米硅量子点的自然形成及其发光特性

用 Si H4 气体的减压 CVD法 ,在氧化硅以及石英基板上自然形成了高密度的 (～ 10 11cm-2 )纳米尺寸的半球状硅晶粒 (硅量子点 ) ,并且对其光学吸收和发光 (Photo- luminescence,PL)特性进行了评价。用表面热氧化了的硅量子点样品 ,在室温条件且在高于 1.2 e V以上的能量范围内观察到了 PL谱。随着量子点尺寸的减少 ,PL谱的光学吸收限移向高能方向。 PL谱的峰值能呈现大幅度的 (约 0 .9e V)斯塔克移动 ,并且 PL谱的强度几乎与温度无关 ,说明发光来自与局域能级相关联的发光和复合过程。     

In vivo electrochemical impedance measurement on single cell membrane

The electrochemical characteristics of the plasma membranes of single cells and organelles were investigated. Silicon fabrication technology was used to produce a metal ultra-microelectrode (UME). Furthermore, the UME was characterized in a cell medium using electrochemical impedance spectroscopy (EIS). A single rat fibroblast cell, or chloroplast purified from Peperomia metallica leaves, was immobilized by a micropipette after which the UME was inserted into its cytosolic space through cell membrane using a piezo actuator. An in vivo EIS measurement between the UME and the counter electrode outside of a single cell was taken. The measurements were analyzed using equivalent circuits in order to estimate the membrane impedance of a single cell.     

Layer-transfer process for silicon-on-insulator with improved manufacturability

We observe hydrogen platelet buildup in single-crystalline silicon caused by hydrogen-plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried-defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena and discuss applicability of the plasma hydrogenation to silicon-on-insulator (SOI) wafer fabrication by layer transfer.     

平板显示的最新进展

介绍了平板显示在技术、市场等方面的最新发展情况。对LCD、PDP、OLED三大主流产品的技术性能、发展前景进行了对比和分析。     

太赫兹波对抗等离子体隐身技术的探讨

等离子体隐身是隐身技术的一个新分支.在等离子体隐身机理分析中,重点探讨了等离子体折射隐身和吸收隐身特性.对太赫兹辐射具有的高穿透性、高分辨率和反隐身能力进行了研究.依据对等离子体隐身技术的局限性分析,提出了采用太赫兹雷达探测等离子体隐身飞行器的可行性及技术途径.     

Low‐Temperature Growth of SiO2 Films by Plasma‐Enhanced Atomic Layer Deposition

Silicon dioxide (SiO₂) films prepared by plasma‐enhanced atomic‐layer deposition were successfully grown at temperatures of 100 to 250 °C, showing self‐limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of SiO₂ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A SiO₂ film grown at 250 °C exhibits a much lower leakage current than that grown at 100°C due to its high film density and the fact that it contains deeper electron traps.     

电光源科技发展趋势

本文对电光源发展的现状进行了分析,并对电光源发展趋势及应用前景进行了展望。