Influence of pores arrangement on stability of photonic structures during sintering

Discrete Element Method (DEM) has been used for numerical investigation of sintering-induced structural deformations occurring in inverse opal photonic structures. The influence of the initial arrangement of template particles on the stability of highly porous inverse opal α-Al₂O₃ structures has been analyzed. The material transport, densification, as well as formation of defects and cracks have been compared for various case studies. Three different stages of defects formation have been distinguished starting with local defects ending with intrapore cracks. The results show that the packing of the template particles defined during the template self-assembly process play a crucial role in the later structural deformation upon thermal exposure. The simulation results are in very good agreement with experimental data obtained from SEM images and previous studies by ptychographic X-ray tomography.     

Damage identification in concrete using impact non-linear reverberation spectroscopy

High amplitude non-linear acoustic methods have shown potential for the identification of micro damage in brittle materials such as concrete. Commonly, these methods evaluate a non-linearity parameter from the relative change in frequency and attenuation with strain amplitude. Here, a novel attenuation model is introduced to describe the free reverberation from a standard impact resonance frequency test, together with an algorithm for estimating the unknown model coefficients. The non-linear variation can hereby by analyzed over a wider dynamic range as compared to conventional methods. The experimental measurement is simple and fully compatible with the standardized free-free linear impact frequency test.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

Fully coupled LES-DEM of particle interaction and agglomeration in a turbulent channel flow

Coupled large eddy simulation and the discrete element method are applied to study turbulent particle–laden flows, including particle dispersion and agglomeration, in a channel. The particle–particle interaction model is based on the Hertz–Mindlin approach with Johnson–Kendall–Roberts cohesion to allow the simulation of van der Waals forces in a dry air flow. The influence of different particle surface energies, and the impact of fluid turbulence, on agglomeration behaviour are investigated. The agglomeration rate is found to be strongly influenced by the particle surface energy, with a positive relationship observed between the two. Particle agglomeration is found to be enhanced in two separate regions within the channel. First, in the near-wall region due to the high particle concentration there driven by turbophoresis, and secondly in the buffer region where the high turbulence intensity enhances particle–particle interactions.     

综放高瓦斯矿井煤层瓦斯涌出量综合预测

为了成功预测竹林山煤矿综放高瓦斯矿井大采高工作面煤层瓦斯涌出量,以主采3号煤层为主要研究对象,针对3号煤层以往开采情况,通过布设测点测量其煤层瓦斯含量和了解相邻矿井瓦斯含量,采用分源预测法、回归法及统计法等预测方法得到了3号煤层瓦斯含量的分布规律,并绘制了3号煤层的瓦斯含量等值线图。对矿井不同生产时期的瓦斯含量进行预测,得到了生产前期、中期及后期采区的最大绝对瓦斯涌出量和最大相对瓦斯涌出量,说明了竹林山煤矿各个时期均属于高瓦斯矿井。     

中子平衡节块离散纵标法及CMFD加速技术研究

本文基于横向积分离散纵标方程,解析得到横向积分通量中出射通量与入射通量的关系,并根据类似于扩散方程节块展开法的输运节块中子平衡方程形式,得到了一种高效的节块离散纵标法数值迭代策略。数值结果表明,本文提出的方法可行且数值结果正确。此外,粗网有限差分(CMFD)加速技术在节块离散纵标法中也取得了非常好的应用效果。     

射频电缆的幅相稳定性测试研究

对射频电缆幅相稳定性进行了介绍,阐述了射频测试电缆相位和幅度变化的因素,并详细分析了射频电缆相位性能以及幅度性能的不同测试方法,最后通过实测数据的展示,总结说明了在日常测试中该如何正确使用测试电缆。     

On global Hessenberg based methods for solving Sylvester matrix equations

In the first part of this paper, we investigate the use of Hessenberg-based methods for solving the Sylvester matrix equation $AX+XB=C$. To achieve this goal, the Sylvester form of the global generalized Hessenberg process is presented. Using this process, different methods based on a Petrov–Galerkin or on a minimal norm condition are derived. In the second part, we focus on the SGl-CMRH method which is based on the Sylvester form of the Hessenberg process with pivoting strategy combined with a minimal norm condition. In order to accelerate the SGl-CMRH method, a preconditioned framework of this method is also considered. It includes both fixed and flexible variants of the SGl-CMRH method. Moreover, the connection between the flexible preconditioned SGl-CMRH method and the fixed one is studied and some upper bounds for the residual norm are obtained. In particular, application of the obtained theoretical results is investigated for the special case of solving linear systems of equations with several right-hand sides. Finally, some numerical experiments are given in order to evaluate the effectiveness of the proposed methods.