elemental redistribution and interfacial reaction mechanism for the flip chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump with Al/Ni(V)/Cu under-Bump metallization during aging

In flip chip technology, Al/Ni(V)/Cu under-bump metallization (UBM) is currently applicable for Pb-free solder, and Sn−Ag−Cu solder is a promising candidate to replace the conventional Sn−Pb solder. In this study, Sn-3.0Ag-(0.5 or 1.5)Cu solder bumps with Al/Ni(V)/Cu UBM after assembly and aging at 150°C were employed to investigate the elemental redistribution, and reaction mechanism between solders and UBMs. During assembly, the Cu layer in the Sn-3.0Ag-0.5Cu joint was completely dissolved into solders, while Ni(V) layer was dissolved and reacted with solders to form (Cu_1−y,Ni_y)₆Sn₅ intermetallic compound (IMC). The (Cu_1−y,Ni_y)₆Sn₅ IMC gradually grew with the rate constant of 4.63 × 10⁻⁸ cm/sec^0.5 before 500 h aging had passed. After 500 h aging, the (Cu_1−y,Ni_y)₆Sn₅ IMC dissolved with aging time. In contrast, for the Sn-3.0Ag-1.5Cu joint, only fractions of Cu layer were dissolved during assembly, and the remaining Cu layer reacted with solders to form Cu₆Sn₅ IMC. It was revealed that Ni in the Ni(V) layer was incorporated into the Cu₆Sn₅ IMC through slow solid-state diffusion, with most of the Ni(V) layer preserved. During the period of 2,000 h aging, the growth rate constant of (Cu_1−y,Ni_y)₆Sn₅ IMC was down to 1.74 × 10⁻⁸ cm/sec^0.5 in, the Sn-3.0Ag-1.5Cu joints. On the basis of metallurgical interaction, IMC morphology evolution, growth behavior of IMC, and Sn−Ag−Cu ternary isotherm, the interfacial reaction mechanism between Sn-3.0Ag-(0.5 or 1.5)Cu solder bump and Al/Ni(V)/Cu UBM was discussed and proposed.     

化学镀Ni-P在纯锡凸点的应用及界面研究

采用化学镀Ni-P作UBM阻挡层,利用电镀的方法制备了面阵列和周边排布的无铅纯锡凸点,凸点高度为85±2μm,一致性良好。研究了不同回流温度下纯锡焊球的剪切强度、断裂模式和与Ni-P层反应生成的金属间化合物。结果表明,纯锡凸点回流时与Ni-P生成针状Ni3Sn4,凸点剪切强度达到92MPa以上。剪切断裂为韧性断裂,随着回流温度提高及回流时间延长,Ni3Sn4相由针状向块状转变,Ni-P层与Ni3Sn4层间生成层状Ni3P相,粗化的Ni3Sn4相受压应力向焊球内部脱落。     

微量Ni对Sn-3.0Ag-0.5Cu钎料及焊点界面的影响

研究了Ni的含量对无铅钎料Sn-3.0Ag-0.5Cu润湿性、熔点、重熔及老化条件下界面化合物(IMC)的影响。结果表明:微量Ni的加入使SnAgCu润湿力增加6%;使合金熔点略升高约3℃;重熔时在界面形成了(Cu,Ni)6Sn5IMC层,且IMC厚度远高于SnAgCu/Cu的Cu6Sn5IMC厚度。在150℃老化过程中,SnAgCuNi/Cu重熔焊点IMC随着时间的增加,其增幅小于SnAgCu/Cu的增幅,此时Ni对IMC的增长有一定抑制作用。     

Microstructure Evolution of Concentration Gradient Li[Ni0.75Co0.10Mn0.15]O2 Cathode for Lithium‐Ion Batteries

Detailed analysis of the microstructural changes during lithiation of a full‐concentration‐gradient (FCG) cathode with an average composition of Li[Ni_0.75Co_0.10Mn_0.15]O₂ is performed starting from its hydroxide precursor, FCG [Ni_0.75Co_0.10Mn_0.15](OH)₂ prior to lithiation. Transmission electron microscopy (TEM) reveals that a unique rod‐shaped primary particle morphology and radial crystallographic texture are present in the prelithiation stage. In addition, TEM detected a two‐phase structure consisting of MnOOH and Ni(OH)₂, and crystallographic twins of MnOOH on the Mn‐rich precursor surface. The formation of numerous twins is driven by the lattice mismatch between MnOOH and Ni(OH)₂. Furthermore, the twins persist in the lithiated cathode; however, their density decrease with increasing lithiation temperature. Cation disordering, which influences cathode performance, is observed to continuously decrease with increasing lithiation temperature with a minimum observed at 790 °C. Consequently, lithiation at 790 °C (for 10 h) produced optimal discharge capacity and cycling stability. Above 790 °C, an increase in cation disordering and excessive coarsening of the primary particles lead to the deterioration of electrochemical properties. The twins in the FCG cathode precursor may promote the optimal primary particle morphology by retarding the random coalescence of primary particles during lithiation, effectively preserving both the morphology and crystallographic texture of the precursor.     

Highly Dispersed NiO Clusters Induced Electron Delocalization of Ni?N?C Catalysts for Enhanced CO2 Electroreduction

Oxygen-regulated Ni-based single-atom catalysts (SACs) show great potential in accelerating the kinetics of electrocatalytic CO₂ reduction reaction (CO₂RR). However, it remains a challenge to precisely control the coordination environment of Ni O moieties and achieve high activity at high overpotentials. Herein, a facile carbonization coupled oxidation strategy is developed to mass produce NiO clusters-decorated Ni N C SACs that exhibit a high Faradaic efficiency of CO (maximum of 96.5%) over a wide potential range (−0.9 to −1.3 V versus reversible hydrogen electrode) and a high turnover frequency for CO production of 10 120 h⁻¹ even at the high overpotential of 1.19 V. Density functional theory calculations reveal that the highly dispersed NiO clusters induce electron delocalization of active sites and reduce the energy barriers for *COOH intermediates formation from CO₂, leading to an enhanced reaction kinetics for CO production. This study opens a new universal pathway for the construction of oxygen-regulated metal-based SACs for various catalytic applications.     

Al/Ni薄膜自蔓延反应连接温度场模拟及分析

自蔓延反应能在极短时间内产生足够集中的热量熔化钎料实现材料的连接,具有连接效率高、对连接母材热影响小等特点,从而在材料连接和电子封装领域有着广泛的应用前景。针对Cu/Cu和Cu/Si两种互连结构,建立Ai/Ni薄膜自蔓延反应的连接温度场有限元模型,分析不同钎料厚度、预热条件等参数以及不同连接材料对自蔓延反应连接温度场的影响规律。     

难熔元素W/Re对镍基单晶高温合金再结晶的影响

两种实验合金(DD00和DD0WR)被设计用于阐明难熔元素W/Re对镍基单晶高温合金再结晶行为的影响。对比DD00合金,加入W/Re的DD0WR合金的再结晶形核阶段被延长,晶粒长大速率减慢,这也意味着DD0WR合金的再结晶行为明显受到抑制。通过透射电镜(TEM)明场像观察,随着热处理时间地延长,DD0WR合金的位错密度消除得更慢。结合TEM中扫描透射电子显微探测器(STEM)和X射线能谱仪(EDS)观察发现,在DD0WR合金中,位错和晶界处有W/Re元素富集。据此可知,对于DD0WR合金,由于难熔元素W/Re在位错和晶界处富集,阻碍了位错运动和晶界迁移,有效地抑制了再结晶的发生。     

螺旋碳纳米管的制备、表征及性能

采用溶胶-凝胶结合氢气还原方法制备了Ni纳米颗粒,并用这种Ni纳米颗粒作为催化剂,通过催化裂解乙炔的方法在425℃制备了螺旋度较高且呈对称生长的螺旋碳纳米管。结果表明,本方法简单、成本低、环境友好,可大量制备高纯度螺旋碳纳米管。场发射扫描电镜(FE-SEM)及高分辨透射电镜(HR-TEM)图片表明,通常情况下两根旋向相反的螺旋碳纳米管生长在一个催化剂颗粒上,且这种纳米螺旋呈空心管状。X射线衍射及拉曼光谱分析表明,所得样品成分为有缺陷的石墨结构和镍多晶,未发现其他杂相。此外,对样品的磁性及微波吸收性能进行了研究。     

"自上而下"法制备高性能GaN纳米线阵列

针对自下而上生长GaN纳米线的尺寸、形态、取向不易控制的问题,文中采用自上而下刻蚀的方法来制备GaN纳米线材料。以图形化的金属Ni作为掩膜对GaN进行ICP刻蚀,系统研究了刻蚀参数,主要是ICP功率以及RF功率对GaN纳米线形貌以及拉曼、PL光谱的影响,同时也对比了干法刻蚀后,有无湿法处理的影响。研究发现,当ICP功率为1 000 W,RF功率为100 W时,GaN纳米线的拉曼和PL光谱强度较大,表明此功率下刻蚀的纳米线损伤较小。经过KOH浸泡30 min后,GaN纳米线的形貌得到了改善,拉曼和PL光谱强度均优于单纯的干法刻蚀,为下一步器件的制备提供了良好的材料基础。     

Effect of Pulse-Plated Nickel Barriers on Tin Whisker Growth for Pure Tin Solder Joints

We investigate the influence of pulse-plated Ni barriers, compared to direct current (DC)-plated Ni barriers, on the growth of Sn whiskers in laminated Cu/Ni/Sn samples. The results indicate that the pulse-plated Ni barriers exhibit much better resistance to Sn whisker growth than the DC-plated Ni barriers, i.e., when exposed to ambient of 60°C and 93% relative humidity (RH) for 40 days only a few small hillocks were observed as opposed to the long whiskers and large nodules of Sn for the DC-plated Ni barriers. The underlying mechanisms are addressed based on the texture characteristics of the plated Ni and Sn layers and the formation of intermetallic compounds.